JP4153606B2 - プラズマエッチング方法およびプラズマエッチング装置 - Google Patents

プラズマエッチング方法およびプラズマエッチング装置 Download PDF

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Publication number
JP4153606B2
JP4153606B2 JP31994298A JP31994298A JP4153606B2 JP 4153606 B2 JP4153606 B2 JP 4153606B2 JP 31994298 A JP31994298 A JP 31994298A JP 31994298 A JP31994298 A JP 31994298A JP 4153606 B2 JP4153606 B2 JP 4153606B2
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JP
Japan
Prior art keywords
etching
bias power
film
plasma
processing chamber
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Expired - Lifetime
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JP31994298A
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English (en)
Japanese (ja)
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JP2000133638A5 (enExample
JP2000133638A (ja
Inventor
一也 永関
剛 斉藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Priority to JP31994298A priority Critical patent/JP4153606B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to PCT/JP1999/005821 priority patent/WO2000024046A1/ja
Priority to US09/807,896 priority patent/US6793832B1/en
Priority to DE69942372T priority patent/DE69942372D1/de
Priority to EP99949351A priority patent/EP1143496B1/en
Priority to KR1020017004885A priority patent/KR100590370B1/ko
Publication of JP2000133638A publication Critical patent/JP2000133638A/ja
Publication of JP2000133638A5 publication Critical patent/JP2000133638A5/ja
Application granted granted Critical
Publication of JP4153606B2 publication Critical patent/JP4153606B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
JP31994298A 1998-10-22 1998-10-22 プラズマエッチング方法およびプラズマエッチング装置 Expired - Lifetime JP4153606B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP31994298A JP4153606B2 (ja) 1998-10-22 1998-10-22 プラズマエッチング方法およびプラズマエッチング装置
US09/807,896 US6793832B1 (en) 1998-10-22 1999-10-22 Plasma etching method
DE69942372T DE69942372D1 (de) 1998-10-22 1999-10-22 Plasmaätzverfahren
EP99949351A EP1143496B1 (en) 1998-10-22 1999-10-22 Plasma etching method
PCT/JP1999/005821 WO2000024046A1 (en) 1998-10-22 1999-10-22 Plasma etching method
KR1020017004885A KR100590370B1 (ko) 1998-10-22 1999-10-22 플라즈마 에칭 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31994298A JP4153606B2 (ja) 1998-10-22 1998-10-22 プラズマエッチング方法およびプラズマエッチング装置

Publications (3)

Publication Number Publication Date
JP2000133638A JP2000133638A (ja) 2000-05-12
JP2000133638A5 JP2000133638A5 (enExample) 2005-11-04
JP4153606B2 true JP4153606B2 (ja) 2008-09-24

Family

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Family Applications (1)

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JP31994298A Expired - Lifetime JP4153606B2 (ja) 1998-10-22 1998-10-22 プラズマエッチング方法およびプラズマエッチング装置

Country Status (6)

Country Link
US (1) US6793832B1 (enExample)
EP (1) EP1143496B1 (enExample)
JP (1) JP4153606B2 (enExample)
KR (1) KR100590370B1 (enExample)
DE (1) DE69942372D1 (enExample)
WO (1) WO2000024046A1 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100327346B1 (ko) * 1999-07-20 2002-03-06 윤종용 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법
KR20020017182A (ko) * 2000-08-29 2002-03-07 윤종용 옥타플루오로부텐으로 이루어지는 식각 가스를 이용한반도체 소자의 제조방법
DE10053780A1 (de) * 2000-10-30 2002-05-16 Infineon Technologies Ag Verfahren zur Strukturierung einer Siliziumoxid-Schicht
US7169695B2 (en) * 2002-10-11 2007-01-30 Lam Research Corporation Method for forming a dual damascene structure
KR100517075B1 (ko) 2003-08-11 2005-09-26 삼성전자주식회사 반도체 소자 제조 방법
KR100656708B1 (ko) 2005-04-01 2006-12-13 주식회사 에이디피엔지니어링 플라즈마 처리장치
JP4653603B2 (ja) * 2005-09-13 2011-03-16 株式会社日立ハイテクノロジーズ プラズマエッチング方法
US7488687B2 (en) 2006-09-12 2009-02-10 Samsung Electronics Co., Ltd. Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layers
US7491343B2 (en) * 2006-09-14 2009-02-17 Lam Research Corporation Line end shortening reduction during etch
US7407597B2 (en) * 2006-09-14 2008-08-05 Lam Research Corporation Line end shortening reduction during etch
US7547636B2 (en) * 2007-02-05 2009-06-16 Lam Research Corporation Pulsed ultra-high aspect ratio dielectric etch
US7737042B2 (en) * 2007-02-22 2010-06-15 Applied Materials, Inc. Pulsed-plasma system for etching semiconductor structures
US7771606B2 (en) * 2007-02-22 2010-08-10 Applied Materials, Inc. Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structures
US7718538B2 (en) * 2007-02-21 2010-05-18 Applied Materials, Inc. Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates
CN101636813B (zh) * 2007-03-12 2013-02-27 艾克斯特朗股份公司 具有改善的处理能力的等离子体系统
US7846846B2 (en) * 2007-09-25 2010-12-07 Applied Materials, Inc. Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls
JP5268625B2 (ja) * 2008-12-26 2013-08-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR101037043B1 (ko) * 2009-02-27 2011-05-26 성균관대학교산학협력단 반도체 기판의 비아 형성방법
US9478408B2 (en) 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
US10081869B2 (en) 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
CN105719965A (zh) * 2014-12-04 2016-06-29 北京北方微电子基地设备工艺研究中心有限责任公司 二氧化硅基片的刻蚀方法和刻蚀设备
JP6504827B2 (ja) * 2015-01-16 2019-04-24 東京エレクトロン株式会社 エッチング方法
US9691625B2 (en) * 2015-11-04 2017-06-27 Lam Research Corporation Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level
JP6833657B2 (ja) * 2017-11-07 2021-02-24 東京エレクトロン株式会社 基板をプラズマエッチングする方法
JP2019212777A (ja) * 2018-06-05 2019-12-12 東京エレクトロン株式会社 成膜用組成物および成膜装置
JP2019212776A (ja) * 2018-06-05 2019-12-12 東京エレクトロン株式会社 成膜用組成物および成膜装置
US10593518B1 (en) * 2019-02-08 2020-03-17 Applied Materials, Inc. Methods and apparatus for etching semiconductor structures
US11456180B2 (en) 2019-11-08 2022-09-27 Tokyo Electron Limited Etching method
WO2021090516A1 (ja) * 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
WO2024204321A1 (ja) * 2023-03-28 2024-10-03 東京エレクトロン株式会社 エッチング装置及びエッチング方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855017A (en) * 1985-05-03 1989-08-08 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
KR900007687B1 (ko) * 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US5888414A (en) 1991-06-27 1999-03-30 Applied Materials, Inc. Plasma reactor and processes using RF inductive coupling and scavenger temperature control
EP0552491B1 (en) * 1992-01-24 1998-07-15 Applied Materials, Inc. Plasma etch process and plasma processing reactor
JP2625072B2 (ja) 1992-09-08 1997-06-25 アプライド マテリアルズ インコーポレイテッド 電磁ｒｆ結合を用いたプラズマ反応装置及びその方法
US5573597A (en) * 1995-06-07 1996-11-12 Sony Corporation Plasma processing system with reduced particle contamination
EP1357584A3 (en) 1996-08-01 2005-01-12 Surface Technology Systems Plc Method of surface treatment of semiconductor substrates

Also Published As

Publication number Publication date
KR20010080234A (ko) 2001-08-22
EP1143496A4 (en) 2006-12-13
DE69942372D1 (de) 2010-06-24
EP1143496B1 (en) 2010-05-12
WO2000024046A1 (en) 2000-04-27
EP1143496A1 (en) 2001-10-10
KR100590370B1 (ko) 2006-06-15
US6793832B1 (en) 2004-09-21
JP2000133638A (ja) 2000-05-12

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