JP4150557B2 - 多層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 - Google Patents

多層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 Download PDF

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Publication number
JP4150557B2
JP4150557B2 JP2002256737A JP2002256737A JP4150557B2 JP 4150557 B2 JP4150557 B2 JP 4150557B2 JP 2002256737 A JP2002256737 A JP 2002256737A JP 2002256737 A JP2002256737 A JP 2002256737A JP 4150557 B2 JP4150557 B2 JP 4150557B2
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JP
Japan
Prior art keywords
group
resist
intermediate layer
layer
material composition
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Expired - Fee Related
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JP2002256737A
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English (en)
Japanese (ja)
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JP2004094029A (ja
JP2004094029A5 (enExample
Inventor
一也 上西
健一郎 佐藤
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2002256737A priority Critical patent/JP4150557B2/ja
Priority to US10/652,320 priority patent/US6897004B2/en
Publication of JP2004094029A publication Critical patent/JP2004094029A/ja
Publication of JP2004094029A5 publication Critical patent/JP2004094029A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2002256737A 2002-09-02 2002-09-02 多層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 Expired - Fee Related JP4150557B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002256737A JP4150557B2 (ja) 2002-09-02 2002-09-02 多層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法
US10/652,320 US6897004B2 (en) 2002-09-02 2003-09-02 Intermediate layer material composition for multilayer resist process and pattern formation process using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002256737A JP4150557B2 (ja) 2002-09-02 2002-09-02 多層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法

Publications (3)

Publication Number Publication Date
JP2004094029A JP2004094029A (ja) 2004-03-25
JP2004094029A5 JP2004094029A5 (enExample) 2005-09-22
JP4150557B2 true JP4150557B2 (ja) 2008-09-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002256737A Expired - Fee Related JP4150557B2 (ja) 2002-09-02 2002-09-02 多層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法

Country Status (2)

Country Link
US (1) US6897004B2 (enExample)
JP (1) JP4150557B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4296053B2 (ja) * 2003-07-04 2009-07-15 富士フイルム株式会社 多層レジストプロセス用中間層組成物及びそれを用いたパターン形成方法
US7361447B2 (en) * 2003-07-30 2008-04-22 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
KR100740611B1 (ko) * 2005-10-12 2007-07-18 삼성전자주식회사 탑 코팅 막용 고분자, 탑 코팅 용액 조성물 및 이를 이용한이머젼 리소그라피 공정
JP2007218943A (ja) * 2006-02-14 2007-08-30 Shin Etsu Chem Co Ltd 基板及びパターン形成方法
JP4548616B2 (ja) 2006-05-15 2010-09-22 信越化学工業株式会社 熱酸発生剤及びこれを含むレジスト下層膜材料、並びにこのレジスト下層膜材料を用いたパターン形成方法
JP4826805B2 (ja) * 2006-08-30 2011-11-30 信越化学工業株式会社 フォトレジスト下層膜材料、フォトレジスト下層膜基板及びパターン形成方法
US7560222B2 (en) * 2006-10-31 2009-07-14 International Business Machines Corporation Si-containing polymers for nano-pattern device fabrication
US7914975B2 (en) 2007-04-10 2011-03-29 International Business Machines Corporation Multiple exposure lithography method incorporating intermediate layer patterning
US8309502B2 (en) * 2009-03-27 2012-11-13 Eastman Chemical Company Compositions and methods for removing organic substances
US8444768B2 (en) 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
US8614053B2 (en) 2009-03-27 2013-12-24 Eastman Chemical Company Processess and compositions for removing substances from substrates
US8586290B2 (en) * 2009-10-23 2013-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning process and chemical amplified photoresist composition
JP2012109538A (ja) 2010-10-29 2012-06-07 Tokyo Ohka Kogyo Co Ltd 積層体、およびその積層体の分離方法
JP5756334B2 (ja) 2010-10-29 2015-07-29 東京応化工業株式会社 積層体、およびその積層体の分離方法
JP5802106B2 (ja) 2010-11-15 2015-10-28 東京応化工業株式会社 積層体、および分離方法
US9029268B2 (en) 2012-11-21 2015-05-12 Dynaloy, Llc Process for etching metals
TWI662370B (zh) * 2015-11-30 2019-06-11 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用之塗料組合物
JP2018055068A (ja) * 2016-09-30 2018-04-05 Jsr株式会社 多層レジストプロセス用膜形成材料及びパターン形成方法
JP7611785B2 (ja) * 2021-07-06 2025-01-10 信越化学工業株式会社 密着膜形成材料、これを用いた密着膜の形成方法、及び密着膜形成材料を用いたパターン形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2573371B2 (ja) 1989-10-11 1997-01-22 沖電気工業株式会社 ３層レジスト法用の中間層形成材
JPH0443264A (ja) 1990-06-08 1992-02-13 Hitachi Zosen Corp 吸収式熱源装置
JPH0444741A (ja) 1990-06-12 1992-02-14 Toshiba Corp ステレオｘ線テレビ装置
JP2641644B2 (ja) 1991-05-16 1997-08-20 東京応化工業株式会社 多層レジスト法用積層材料の製造方法
JPH0638400A (ja) 1992-07-17 1994-02-10 Hitachi Ltd 小型情報処理装置のバッテリ装置
JP2901044B2 (ja) 1993-12-08 1999-06-02 沖電気工業株式会社 三層レジスト法によるパターン形成方法
US7008749B2 (en) * 2001-03-12 2006-03-07 The University Of North Carolina At Charlotte High resolution resists for next generation lithographies

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JP2004094029A (ja) 2004-03-25
US20040053162A1 (en) 2004-03-18
US6897004B2 (en) 2005-05-24

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