JP2004094029A5 - - Google Patents
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- Publication number
- JP2004094029A5 JP2004094029A5 JP2002256737A JP2002256737A JP2004094029A5 JP 2004094029 A5 JP2004094029 A5 JP 2004094029A5 JP 2002256737 A JP2002256737 A JP 2002256737A JP 2002256737 A JP2002256737 A JP 2002256737A JP 2004094029 A5 JP2004094029 A5 JP 2004094029A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- group
- resist
- forming
- intermediate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 12
- 238000000034 method Methods 0.000 claims 3
- 239000000463 material Substances 0.000 claims 2
- 239000011368 organic material Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 125000003710 aryl alkyl group Chemical group 0.000 claims 1
- 125000003118 aryl group Chemical group 0.000 claims 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 claims 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000011229 interlayer Substances 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002256737A JP4150557B2 (ja) | 2002-09-02 | 2002-09-02 | 多層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 |
| US10/652,320 US6897004B2 (en) | 2002-09-02 | 2003-09-02 | Intermediate layer material composition for multilayer resist process and pattern formation process using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002256737A JP4150557B2 (ja) | 2002-09-02 | 2002-09-02 | 多層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004094029A JP2004094029A (ja) | 2004-03-25 |
| JP2004094029A5 true JP2004094029A5 (enExample) | 2005-09-22 |
| JP4150557B2 JP4150557B2 (ja) | 2008-09-17 |
Family
ID=31986318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002256737A Expired - Fee Related JP4150557B2 (ja) | 2002-09-02 | 2002-09-02 | 多層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6897004B2 (enExample) |
| JP (1) | JP4150557B2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4296053B2 (ja) * | 2003-07-04 | 2009-07-15 | 富士フイルム株式会社 | 多層レジストプロセス用中間層組成物及びそれを用いたパターン形成方法 |
| US7361447B2 (en) * | 2003-07-30 | 2008-04-22 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
| KR100740611B1 (ko) * | 2005-10-12 | 2007-07-18 | 삼성전자주식회사 | 탑 코팅 막용 고분자, 탑 코팅 용액 조성물 및 이를 이용한이머젼 리소그라피 공정 |
| JP2007218943A (ja) * | 2006-02-14 | 2007-08-30 | Shin Etsu Chem Co Ltd | 基板及びパターン形成方法 |
| JP4548616B2 (ja) | 2006-05-15 | 2010-09-22 | 信越化学工業株式会社 | 熱酸発生剤及びこれを含むレジスト下層膜材料、並びにこのレジスト下層膜材料を用いたパターン形成方法 |
| JP4826805B2 (ja) * | 2006-08-30 | 2011-11-30 | 信越化学工業株式会社 | フォトレジスト下層膜材料、フォトレジスト下層膜基板及びパターン形成方法 |
| US7560222B2 (en) * | 2006-10-31 | 2009-07-14 | International Business Machines Corporation | Si-containing polymers for nano-pattern device fabrication |
| US7914975B2 (en) | 2007-04-10 | 2011-03-29 | International Business Machines Corporation | Multiple exposure lithography method incorporating intermediate layer patterning |
| US8309502B2 (en) * | 2009-03-27 | 2012-11-13 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| US8444768B2 (en) | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| US8614053B2 (en) | 2009-03-27 | 2013-12-24 | Eastman Chemical Company | Processess and compositions for removing substances from substrates |
| US8586290B2 (en) * | 2009-10-23 | 2013-11-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Patterning process and chemical amplified photoresist composition |
| JP2012109538A (ja) | 2010-10-29 | 2012-06-07 | Tokyo Ohka Kogyo Co Ltd | 積層体、およびその積層体の分離方法 |
| JP5756334B2 (ja) | 2010-10-29 | 2015-07-29 | 東京応化工業株式会社 | 積層体、およびその積層体の分離方法 |
| JP5802106B2 (ja) | 2010-11-15 | 2015-10-28 | 東京応化工業株式会社 | 積層体、および分離方法 |
| US9029268B2 (en) | 2012-11-21 | 2015-05-12 | Dynaloy, Llc | Process for etching metals |
| TWI662370B (zh) * | 2015-11-30 | 2019-06-11 | 南韓商羅門哈斯電子材料韓國公司 | 與外塗佈光致抗蝕劑一起使用之塗料組合物 |
| JP2018055068A (ja) * | 2016-09-30 | 2018-04-05 | Jsr株式会社 | 多層レジストプロセス用膜形成材料及びパターン形成方法 |
| JP7611785B2 (ja) * | 2021-07-06 | 2025-01-10 | 信越化学工業株式会社 | 密着膜形成材料、これを用いた密着膜の形成方法、及び密着膜形成材料を用いたパターン形成方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2573371B2 (ja) | 1989-10-11 | 1997-01-22 | 沖電気工業株式会社 | ３層レジスト法用の中間層形成材 |
| JPH0443264A (ja) | 1990-06-08 | 1992-02-13 | Hitachi Zosen Corp | 吸収式熱源装置 |
| JPH0444741A (ja) | 1990-06-12 | 1992-02-14 | Toshiba Corp | ステレオｘ線テレビ装置 |
| JP2641644B2 (ja) | 1991-05-16 | 1997-08-20 | 東京応化工業株式会社 | 多層レジスト法用積層材料の製造方法 |
| JPH0638400A (ja) | 1992-07-17 | 1994-02-10 | Hitachi Ltd | 小型情報処理装置のバッテリ装置 |
| JP2901044B2 (ja) | 1993-12-08 | 1999-06-02 | 沖電気工業株式会社 | 三層レジスト法によるパターン形成方法 |
| US7008749B2 (en) * | 2001-03-12 | 2006-03-07 | The University Of North Carolina At Charlotte | High resolution resists for next generation lithographies |
-
2002
- 2002-09-02 JP JP2002256737A patent/JP4150557B2/ja not_active Expired - Fee Related
-
2003
- 2003-09-02 US US10/652,320 patent/US6897004B2/en not_active Expired - Fee Related
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