JP4149148B2 - ポジ型レジスト組成物 - Google Patents
ポジ型レジスト組成物 Download PDFInfo
- Publication number
- JP4149148B2 JP4149148B2 JP2001236460A JP2001236460A JP4149148B2 JP 4149148 B2 JP4149148 B2 JP 4149148B2 JP 2001236460 A JP2001236460 A JP 2001236460A JP 2001236460 A JP2001236460 A JP 2001236460A JP 4149148 B2 JP4149148 B2 JP 4149148B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- acid
- carbon atoms
- alicyclic hydrocarbon
- alkyl group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 0 CCC(C1)CC2CC1CC(COC(CCO*(C(C)=C)=O)=O)C2 Chemical compound CCC(C1)CC2CC1CC(COC(CCO*(C(C)=C)=O)=O)C2 0.000 description 2
- KVFBWJQEYQIHQS-UHFFFAOYSA-N C=[Br]c(cc1)ccc1S(C(S(c(cc1)ccc1Br)(=O)=O)=N)(=O)=O Chemical compound C=[Br]c(cc1)ccc1S(C(S(c(cc1)ccc1Br)(=O)=O)=N)(=O)=O KVFBWJQEYQIHQS-UHFFFAOYSA-N 0.000 description 1
- KITFTFPLKQJLCR-UHFFFAOYSA-N CC(C(OCCC(C1(CC(C2)C3)CC3CC2C1)=O)=O)=C Chemical compound CC(C(OCCC(C1(CC(C2)C3)CC3CC2C1)=O)=O)=C KITFTFPLKQJLCR-UHFFFAOYSA-N 0.000 description 1
- GYJLUFVWMQRWRK-UHFFFAOYSA-N CC(C)(C)S(C(S(C1CCCCC1)(=O)=O)=N)(=O)=O Chemical compound CC(C)(C)S(C(S(C1CCCCC1)(=O)=O)=N)(=O)=O GYJLUFVWMQRWRK-UHFFFAOYSA-N 0.000 description 1
- SIRRXKNMGVRDPW-UHFFFAOYSA-N CC(OC1C(C2)C(C3CC4CC3)C4C2C1)OC(C(C)=C)=O Chemical compound CC(OC1C(C2)C(C3CC4CC3)C4C2C1)OC(C(C)=C)=O SIRRXKNMGVRDPW-UHFFFAOYSA-N 0.000 description 1
- CKCZENBQULQBLX-UHFFFAOYSA-N CC(OC1C(CC2)CC2C1)OC(C(C)=C)=O Chemical compound CC(OC1C(CC2)CC2C1)OC(C(C)=C)=O CKCZENBQULQBLX-UHFFFAOYSA-N 0.000 description 1
- UULZGKFHHIRISD-UHFFFAOYSA-N CC1(C2CC(C3)CC1CC3C2)OC(CCC(OCCOC(C(C)=C)=O)=O)=O Chemical compound CC1(C2CC(C3)CC1CC3C2)OC(CCC(OCCOC(C(C)=C)=O)=O)=O UULZGKFHHIRISD-UHFFFAOYSA-N 0.000 description 1
- ZUDJQGHYRUTXEK-UHFFFAOYSA-N Cc(cc1)ccc1S(C(S(C1CCCCC1)(=O)=O)=N)(=O)=O Chemical compound Cc(cc1)ccc1S(C(S(C1CCCCC1)(=O)=O)=N)(=O)=O ZUDJQGHYRUTXEK-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001236460A JP4149148B2 (ja) | 2001-08-03 | 2001-08-03 | ポジ型レジスト組成物 |
TW91116877A TW574626B (en) | 2001-08-03 | 2002-07-29 | Positive resist composition |
KR1020020045513A KR100900468B1 (ko) | 2001-08-03 | 2002-08-01 | ArF엑시머레이저 노광용 포지티브 레지스트 조성물 및 이를 이용한 패턴형성방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001236460A JP4149148B2 (ja) | 2001-08-03 | 2001-08-03 | ポジ型レジスト組成物 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003043690A JP2003043690A (ja) | 2003-02-13 |
JP2003043690A5 JP2003043690A5 (ko) | 2006-01-19 |
JP4149148B2 true JP4149148B2 (ja) | 2008-09-10 |
Family
ID=19067723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001236460A Expired - Fee Related JP4149148B2 (ja) | 2001-08-03 | 2001-08-03 | ポジ型レジスト組成物 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4149148B2 (ko) |
KR (1) | KR100900468B1 (ko) |
TW (1) | TW574626B (ko) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3895224B2 (ja) | 2001-12-03 | 2007-03-22 | 東京応化工業株式会社 | ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法 |
WO2004041879A1 (ja) * | 2002-11-05 | 2004-05-21 | Jsr Corporation | アクリル系共重合体および感放射線性樹脂組成物 |
JP4225817B2 (ja) | 2003-03-31 | 2009-02-18 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
JP2005031233A (ja) | 2003-07-09 | 2005-02-03 | Tokyo Ohka Kogyo Co Ltd | レジスト組成物、積層体、及びレジストパターン形成方法 |
ATE418570T1 (de) * | 2003-08-05 | 2009-01-15 | Jsr Corp | Acrylpolymere und strahlungsempfindliche harzzusammensetzung |
JP2011046713A (ja) * | 2004-04-23 | 2011-03-10 | Sumitomo Chemical Co Ltd | 化学増幅型ポジ型レジスト組成物及び(メタ)アクリル酸誘導体とその製法 |
US7122291B2 (en) * | 2004-08-02 | 2006-10-17 | Az Electronic Materials Usa Corp. | Photoresist compositions |
JP4485913B2 (ja) * | 2004-11-05 | 2010-06-23 | 東京応化工業株式会社 | レジスト組成物の製造方法およびレジスト組成物 |
JP4682069B2 (ja) * | 2006-03-17 | 2011-05-11 | 富士フイルム株式会社 | ポジ型感光性組成物及びそれを用いたパターン形成方法 |
JP4783657B2 (ja) * | 2006-03-27 | 2011-09-28 | 富士フイルム株式会社 | ポジ型レジスト組成物及び該組成物を用いたパターン形成方法 |
JP6100986B2 (ja) * | 2006-10-30 | 2017-03-22 | 三菱レイヨン株式会社 | 重合体の製造方法、レジスト組成物の製造方法、およびパターンが形成された基板の製造方法 |
WO2008081822A1 (ja) * | 2006-12-27 | 2008-07-10 | Mitsubishi Rayon Co., Ltd. | レジスト用重合体、レジスト組成物、および微細パターンが形成された基板の製造方法 |
JP5151586B2 (ja) * | 2007-03-23 | 2013-02-27 | 住友化学株式会社 | フォトレジスト組成物 |
KR100933984B1 (ko) * | 2007-11-26 | 2009-12-28 | 제일모직주식회사 | 신규 공중합체 및 이를 포함하는 레지스트 조성물 |
JP5620627B2 (ja) * | 2008-01-23 | 2014-11-05 | 三菱レイヨン株式会社 | レジスト用重合体の製造方法、レジスト組成物、および微細パターンが形成された基板の製造方法 |
JP5500795B2 (ja) * | 2008-07-03 | 2014-05-21 | 三菱レイヨン株式会社 | レジスト材料、レジスト組成物、および微細パターンが形成された基板の製造方法 |
TWI584063B (zh) * | 2012-03-05 | 2017-05-21 | 三菱麗陽股份有限公司 | 微影用共聚合物的製造方法 |
JP5737242B2 (ja) * | 2012-08-10 | 2015-06-17 | 信越化学工業株式会社 | 単量体、高分子化合物、レジスト組成物及びパターン形成方法 |
US10336851B2 (en) | 2013-09-03 | 2019-07-02 | Mitsubishi Chemical Corporation | Copolymer for semiconductor lithography, resist composition, and method for manufacturing substrate |
JP7198069B2 (ja) * | 2017-12-22 | 2022-12-28 | 住友化学株式会社 | 樹脂、レジスト組成物及びレジストパターンの製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6048661A (en) * | 1997-03-05 | 2000-04-11 | Shin-Etsu Chemical Co., Ltd. | Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation |
JP3237605B2 (ja) * | 1998-04-06 | 2001-12-10 | 日本電気株式会社 | 1,2−ジオール構造を有する脂環式(メタ)アクリレート誘導体、およびその重合体 |
JP3042618B2 (ja) * | 1998-07-03 | 2000-05-15 | 日本電気株式会社 | ラクトン構造を有する(メタ)アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法 |
JP3963602B2 (ja) * | 1999-01-27 | 2007-08-22 | 富士フイルム株式会社 | 遠紫外線露光用ポジ型フォトレジスト組成物 |
US6596458B1 (en) * | 1999-05-07 | 2003-07-22 | Fuji Photo Film Co., Ltd. | Positive-working photoresist composition |
JP4336925B2 (ja) * | 1999-08-16 | 2009-09-30 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
-
2001
- 2001-08-03 JP JP2001236460A patent/JP4149148B2/ja not_active Expired - Fee Related
-
2002
- 2002-07-29 TW TW91116877A patent/TW574626B/zh not_active IP Right Cessation
- 2002-08-01 KR KR1020020045513A patent/KR100900468B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW574626B (en) | 2004-02-01 |
KR100900468B1 (ko) | 2009-06-03 |
KR20030035826A (ko) | 2003-05-09 |
JP2003043690A (ja) | 2003-02-13 |
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