JP4124543B2 - 表面処理方法及びその装置 - Google Patents

表面処理方法及びその装置 Download PDF

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Publication number
JP4124543B2
JP4124543B2 JP32062799A JP32062799A JP4124543B2 JP 4124543 B2 JP4124543 B2 JP 4124543B2 JP 32062799 A JP32062799 A JP 32062799A JP 32062799 A JP32062799 A JP 32062799A JP 4124543 B2 JP4124543 B2 JP 4124543B2
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Japan
Prior art keywords
gas
surface treatment
predetermined temperature
wafer
processed
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Expired - Fee Related
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JP32062799A
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English (en)
Japanese (ja)
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JP2000208498A (ja
JP2000208498A5 (enrdf_load_stackoverflow
Inventor
林 保 男 小
谷 光太郎 宮
川 薫 前
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of JP2000208498A5 publication Critical patent/JP2000208498A5/ja
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Publication of JP4124543B2 publication Critical patent/JP4124543B2/ja
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  • Drying Of Semiconductors (AREA)
JP32062799A 1998-11-11 1999-11-11 表面処理方法及びその装置 Expired - Fee Related JP4124543B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32062799A JP4124543B2 (ja) 1998-11-11 1999-11-11 表面処理方法及びその装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-320478 1998-11-11
JP32047898 1998-11-11
JP32062799A JP4124543B2 (ja) 1998-11-11 1999-11-11 表面処理方法及びその装置

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP2007249135A Division JP4124800B2 (ja) 1998-11-11 2007-09-26 表面処理方法及びその装置
JP2008013588A Division JP4732469B2 (ja) 1998-11-11 2008-01-24 表面処理方法及びその装置
JP2008013592A Division JP4612063B2 (ja) 1998-11-11 2008-01-24 表面処理方法及びその装置
JP2008070713A Division JP4732475B2 (ja) 1998-11-11 2008-03-19 表面処理方法及びその装置

Publications (3)

Publication Number Publication Date
JP2000208498A JP2000208498A (ja) 2000-07-28
JP2000208498A5 JP2000208498A5 (enrdf_load_stackoverflow) 2007-11-15
JP4124543B2 true JP4124543B2 (ja) 2008-07-23

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Family Applications (1)

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JP32062799A Expired - Fee Related JP4124543B2 (ja) 1998-11-11 1999-11-11 表面処理方法及びその装置

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JP (1) JP4124543B2 (enrdf_load_stackoverflow)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100605884B1 (ko) * 1998-11-11 2006-08-01 동경 엘렉트론 주식회사 표면 처리 방법 및 장치
JP4057198B2 (ja) 1999-08-13 2008-03-05 東京エレクトロン株式会社 処理装置及び処理方法
KR100338768B1 (ko) * 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
KR100316721B1 (ko) * 2000-01-29 2001-12-12 윤종용 실리사이드막을 구비한 반도체소자의 제조방법
JP4910231B2 (ja) * 2000-10-25 2012-04-04 ソニー株式会社 半導体装置の製造方法
JP4644943B2 (ja) * 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7780793B2 (en) * 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
JP4806241B2 (ja) * 2005-09-14 2011-11-02 東京エレクトロン株式会社 基板処理装置及び基板リフト装置
JP4976002B2 (ja) * 2005-11-08 2012-07-18 東京エレクトロン株式会社 基板処理装置，基板処理方法及び記録媒体
JP2007214538A (ja) * 2006-01-11 2007-08-23 Renesas Technology Corp 半導体装置およびその製造方法
US7718032B2 (en) * 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
US7476291B2 (en) * 2006-09-28 2009-01-13 Lam Research Corporation High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
JP5229711B2 (ja) 2006-12-25 2013-07-03 国立大学法人名古屋大学 パターン形成方法、および半導体装置の製造方法
JP4949091B2 (ja) * 2007-03-16 2012-06-06 東京エレクトロン株式会社 基板処理装置、基板処理方法および記録媒体
JP2008235918A (ja) * 2008-04-16 2008-10-02 Tokyo Electron Ltd プラズマ基板処理装置
US7994002B2 (en) 2008-11-24 2011-08-09 Applied Materials, Inc. Method and apparatus for trench and via profile modification
JP5140608B2 (ja) * 2009-01-16 2013-02-06 株式会社アルバック 真空処理装置及び真空処理方法
JP5703315B2 (ja) * 2011-02-08 2015-04-15 株式会社アルバック ラジカルエッチング方法
JP6326295B2 (ja) * 2014-06-04 2018-05-16 東京エレクトロン株式会社 冷却処理装置、及び、冷却処理装置の運用方法
WO2020055612A1 (en) * 2018-09-10 2020-03-19 Lam Research Corporation Atomic layer treatment process using metastable activated radical species

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