JP4123832B2 - 電気光学装置及び電子機器 - Google Patents
電気光学装置及び電子機器 Download PDFInfo
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- JP4123832B2 JP4123832B2 JP2002160246A JP2002160246A JP4123832B2 JP 4123832 B2 JP4123832 B2 JP 4123832B2 JP 2002160246 A JP2002160246 A JP 2002160246A JP 2002160246 A JP2002160246 A JP 2002160246A JP 4123832 B2 JP4123832 B2 JP 4123832B2
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- Prior art keywords
- layer
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- electro
- metal layer
- optical device
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/88—Dummy elements, i.e. elements having non-functional features
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002160246A JP4123832B2 (ja) | 2002-05-31 | 2002-05-31 | 電気光学装置及び電子機器 |
| CN200710088162A CN100576561C (zh) | 2002-05-31 | 2003-05-27 | 电光学装置及电子设备 |
| KR10-2003-0033579A KR100530439B1 (ko) | 2002-05-31 | 2003-05-27 | 전기 광학 장치 및 그 제조 방법, 및 전자 기기 |
| CNB031381200A CN1314128C (zh) | 2002-05-31 | 2003-05-27 | 电光学装置及其制造方法、及电子设备 |
| US10/444,987 US7158103B2 (en) | 2002-05-31 | 2003-05-27 | Electro-optical device, method of manufacturing the same, and electronic apparatus |
| CNA2007100881610A CN101017844A (zh) | 2002-05-31 | 2003-05-27 | 电光学装置及其制造方法、及电子设备 |
| CNU032612753U CN2627785Y (zh) | 2002-05-31 | 2003-05-28 | 电光学装置及电子设备 |
| TW092114418A TWI265748B (en) | 2002-05-31 | 2003-05-28 | Electro-optical device, method of manufacturing the same, and electronic apparatus |
| EP03253429A EP1367647A3 (en) | 2002-05-31 | 2003-05-30 | Electro-optical device, method of manufacturing the same, and electric apparatus |
| US11/604,739 US8138996B2 (en) | 2002-05-31 | 2006-11-28 | Electro-optical device, method of manufacturing the same, and electronic apparatus with overlapping electrode and power source line |
| US13/196,072 US8743025B2 (en) | 2002-05-31 | 2011-08-02 | Electro-optical device, method of manufacturing the same, and electronic apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002160246A JP4123832B2 (ja) | 2002-05-31 | 2002-05-31 | 電気光学装置及び電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005153532A Division JP4274151B2 (ja) | 2005-05-26 | 2005-05-26 | 電気光学装置、及び電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004006137A JP2004006137A (ja) | 2004-01-08 |
| JP2004006137A5 JP2004006137A5 (enExample) | 2005-10-06 |
| JP4123832B2 true JP4123832B2 (ja) | 2008-07-23 |
Family
ID=29417271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002160246A Expired - Fee Related JP4123832B2 (ja) | 2002-05-31 | 2002-05-31 | 電気光学装置及び電子機器 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US7158103B2 (enExample) |
| EP (1) | EP1367647A3 (enExample) |
| JP (1) | JP4123832B2 (enExample) |
| KR (1) | KR100530439B1 (enExample) |
| CN (4) | CN100576561C (enExample) |
| TW (1) | TWI265748B (enExample) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4720069B2 (ja) | 2002-04-18 | 2011-07-13 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP2004191627A (ja) | 2002-12-11 | 2004-07-08 | Hitachi Ltd | 有機発光表示装置 |
| JP3918770B2 (ja) * | 2003-04-25 | 2007-05-23 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の駆動方法および電子機器 |
| JP4062171B2 (ja) * | 2003-05-28 | 2008-03-19 | ソニー株式会社 | 積層構造の製造方法 |
| KR100970253B1 (ko) | 2003-12-19 | 2010-07-16 | 삼성전자주식회사 | 발광소자의 제조 방법 |
| US7495388B2 (en) * | 2004-01-08 | 2009-02-24 | Samsung Electronics Co., Ltd. | Display device, and method of manufacturing the display device |
| KR100951914B1 (ko) * | 2004-01-08 | 2010-04-09 | 삼성전자주식회사 | 표시장치 및 이의 제조 방법 |
| US8212474B2 (en) * | 2004-01-08 | 2012-07-03 | Samsung Electronics Co., Ltd. | Display device, and method of manufacturing the display device |
| JP4639662B2 (ja) * | 2004-06-25 | 2011-02-23 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
| JP4517804B2 (ja) * | 2004-09-29 | 2010-08-04 | カシオ計算機株式会社 | ディスプレイパネル |
| KR100611660B1 (ko) * | 2004-12-01 | 2006-08-10 | 삼성에스디아이 주식회사 | 유기 전계 발광 장치 및 동작 방법 |
| WO2007026605A1 (ja) * | 2005-08-30 | 2007-03-08 | Riken | 微細パターン形成方法 |
| KR100719568B1 (ko) | 2005-10-22 | 2007-05-17 | 삼성에스디아이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
| KR100759558B1 (ko) * | 2005-11-12 | 2007-09-18 | 삼성에스디아이 주식회사 | 유기 발광 표시 장치 |
| KR101209038B1 (ko) | 2005-11-18 | 2012-12-06 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP4661557B2 (ja) | 2005-11-30 | 2011-03-30 | セイコーエプソン株式会社 | 発光装置および電子機器 |
| JP4939045B2 (ja) * | 2005-11-30 | 2012-05-23 | セイコーエプソン株式会社 | 発光装置および電子機器 |
| JP2008107785A (ja) * | 2006-09-29 | 2008-05-08 | Seiko Epson Corp | 電気光学装置および電子機器 |
| CN101154348B (zh) * | 2006-09-29 | 2012-09-05 | 精工爱普生株式会社 | 电光学装置和电子设备 |
| KR100846592B1 (ko) | 2006-12-13 | 2008-07-16 | 삼성에스디아이 주식회사 | 유기 발광 디스플레이 장치 |
| KR20090010883A (ko) * | 2007-07-23 | 2009-01-30 | 소니 가부시끼가이샤 | 유기 전계발광 소자 및 표시 장치 |
| WO2009042787A2 (en) * | 2007-09-25 | 2009-04-02 | E. I. Du Pont De Nemours And Company | Backplane structures for solution processed electronic devices |
| TWI372576B (en) * | 2008-01-04 | 2012-09-11 | Chimei Innolux Corp | Organic light-emitting device and method for forming the same |
| JP5125671B2 (ja) * | 2008-03-26 | 2013-01-23 | ソニー株式会社 | 画像表示装置、欠陥検出方法及び短絡事故の修復方法 |
| JP4702395B2 (ja) * | 2008-05-20 | 2011-06-15 | ソニー株式会社 | 表示装置および電子機器 |
| JP4816686B2 (ja) * | 2008-06-06 | 2011-11-16 | ソニー株式会社 | 走査駆動回路 |
| JP5287100B2 (ja) * | 2008-09-30 | 2013-09-11 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP5392545B2 (ja) * | 2009-03-13 | 2014-01-22 | ソニー株式会社 | 表示装置 |
| JP5117553B2 (ja) * | 2010-08-05 | 2013-01-16 | 富士フイルム株式会社 | 表示装置の製造方法 |
| CN102576722B (zh) * | 2010-09-29 | 2015-05-27 | 株式会社日本有机雷特显示器 | El显示面板、el显示装置以及el显示面板的制造方法 |
| CN102891163B (zh) * | 2011-07-19 | 2016-09-07 | 群创光电股份有限公司 | 有机电激发光显示装置 |
| KR102327085B1 (ko) * | 2014-10-20 | 2021-11-17 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP6358078B2 (ja) | 2014-12-25 | 2018-07-18 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP6784031B2 (ja) | 2016-02-15 | 2020-11-11 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、および電子機器 |
| WO2018147048A1 (ja) * | 2017-02-13 | 2018-08-16 | ソニー株式会社 | 表示装置、電子機器、および表示装置の製造方法 |
| CN108630143B (zh) * | 2017-03-21 | 2020-07-07 | 群创光电股份有限公司 | 显示面板 |
| KR102511048B1 (ko) * | 2017-11-30 | 2023-03-16 | 엘지디스플레이 주식회사 | 유기 발광 다이오드 표시 장치 및 그의 제조 방법 |
| KR102546293B1 (ko) * | 2017-12-28 | 2023-06-20 | 엘지디스플레이 주식회사 | 전계 발광 표시장치 |
| JP7264694B2 (ja) * | 2019-03-29 | 2023-04-25 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN110828514B (zh) * | 2019-10-25 | 2022-03-08 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制备方法 |
| KR20240095553A (ko) * | 2022-11-28 | 2024-06-26 | 삼성디스플레이 주식회사 | 표시 패널 및 그것을 포함하는 표시 장치 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2135891Y (zh) * | 1992-07-07 | 1993-06-09 | 冯力 | 一种钢板电致发光体 |
| JPH0675237A (ja) * | 1992-08-28 | 1994-03-18 | Sharp Corp | 反射型液晶表示装置 |
| CN2140125Y (zh) * | 1992-10-31 | 1993-08-11 | 赵建生 | 两用平面光源 |
| JP3281848B2 (ja) | 1996-11-29 | 2002-05-13 | 三洋電機株式会社 | 表示装置 |
| KR100243297B1 (ko) * | 1997-07-28 | 2000-02-01 | 윤종용 | 다결정실리콘 박막 트랜지스터-액정표시장치 및그 제조방법 |
| CN101068025B (zh) * | 1997-08-21 | 2010-05-12 | 精工爱普生株式会社 | 显示装置 |
| JP3831510B2 (ja) * | 1998-02-27 | 2006-10-11 | 三洋電機株式会社 | 反射型液晶表示装置 |
| US6489952B1 (en) * | 1998-11-17 | 2002-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type semiconductor display device |
| TW439387B (en) * | 1998-12-01 | 2001-06-07 | Sanyo Electric Co | Display device |
| GB9901334D0 (en) * | 1998-12-08 | 1999-03-10 | Cambridge Display Tech Ltd | Display devices |
| JP4397463B2 (ja) * | 1999-06-29 | 2010-01-13 | 株式会社半導体エネルギー研究所 | 反射型半導体表示装置 |
| US6559594B2 (en) | 2000-02-03 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| JP3967081B2 (ja) | 2000-02-03 | 2007-08-29 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| JP4434411B2 (ja) * | 2000-02-16 | 2010-03-17 | 出光興産株式会社 | アクティブ駆動型有機el発光装置およびその製造方法 |
| JP2001267086A (ja) | 2000-03-23 | 2001-09-28 | Fujitsu Ltd | ディスプレイパネルおよびそのパネルを搭載した情報処理装置 |
| JP2001313173A (ja) * | 2000-04-28 | 2001-11-09 | Seiko Epson Corp | 面発光装置、液晶装置および電子機器 |
| US6989805B2 (en) * | 2000-05-08 | 2006-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7019457B2 (en) * | 2000-08-03 | 2006-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device having both electrodes formed on the insulating layer |
| US6956324B2 (en) | 2000-08-04 | 2005-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
| JP4566475B2 (ja) | 2000-08-04 | 2010-10-20 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP2002108250A (ja) * | 2000-09-29 | 2002-04-10 | Sharp Corp | アクティブマトリックス駆動型自発光表示装置及びその製造方法 |
| JP4127608B2 (ja) | 2000-10-20 | 2008-07-30 | 東芝松下ディスプレイテクノロジー株式会社 | 自己発光表示パネル |
| TW522752B (en) * | 2000-10-20 | 2003-03-01 | Toshiba Corp | Self-luminous display panel and method of manufacturing the same |
| JP3695308B2 (ja) * | 2000-10-27 | 2005-09-14 | 日本電気株式会社 | アクティブマトリクス有機el表示装置及びその製造方法 |
| JP4046948B2 (ja) | 2001-02-26 | 2008-02-13 | 株式会社日立製作所 | 有機発光表示装置 |
| JP4869497B2 (ja) * | 2001-05-30 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP4050503B2 (ja) | 2001-11-29 | 2008-02-20 | 株式会社日立製作所 | 表示装置 |
| JP3995476B2 (ja) | 2001-12-28 | 2007-10-24 | 三洋電機株式会社 | 表示装置及びその製造方法 |
| JP4074099B2 (ja) | 2002-02-04 | 2008-04-09 | 東芝松下ディスプレイテクノロジー株式会社 | 平面表示装置およびその製造方法 |
| JP4310984B2 (ja) | 2002-02-06 | 2009-08-12 | 株式会社日立製作所 | 有機発光表示装置 |
| US7157784B2 (en) | 2005-01-31 | 2007-01-02 | Texas Instruments Incorporated | Drain extended MOS transistors with multiple capacitors and methods of fabrication |
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| US7158103B2 (en) | 2007-01-02 |
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| US20040070808A1 (en) | 2004-04-15 |
| CN1463172A (zh) | 2003-12-24 |
| TW200408298A (en) | 2004-05-16 |
| US20120026149A1 (en) | 2012-02-02 |
| CN1314128C (zh) | 2007-05-02 |
| KR100530439B1 (ko) | 2005-11-23 |
| TWI265748B (en) | 2006-11-01 |
| EP1367647A3 (en) | 2005-01-26 |
| CN2627785Y (zh) | 2004-07-21 |
| CN100576561C (zh) | 2009-12-30 |
| JP2004006137A (ja) | 2004-01-08 |
| CN101017845A (zh) | 2007-08-15 |
| US20070069997A1 (en) | 2007-03-29 |
| EP1367647A2 (en) | 2003-12-03 |
| CN101017844A (zh) | 2007-08-15 |
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