JP4115155B2 - プラズマ処理装置の真空処理室内部品の帯電抑制方法 - Google Patents

プラズマ処理装置の真空処理室内部品の帯電抑制方法 Download PDF

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Publication number
JP4115155B2
JP4115155B2 JP2002109189A JP2002109189A JP4115155B2 JP 4115155 B2 JP4115155 B2 JP 4115155B2 JP 2002109189 A JP2002109189 A JP 2002109189A JP 2002109189 A JP2002109189 A JP 2002109189A JP 4115155 B2 JP4115155 B2 JP 4115155B2
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JP
Japan
Prior art keywords
processing chamber
vacuum processing
processing apparatus
plasma processing
suppressing charging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002109189A
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English (en)
Japanese (ja)
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JP2003303813A (ja
JP2003303813A5 (enExample
Inventor
雄大 上田
克之 小泉
公貴 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2002109189A priority Critical patent/JP4115155B2/ja
Priority to TW092106050A priority patent/TWI287261B/zh
Priority to AU2003227236A priority patent/AU2003227236A1/en
Priority to US10/509,338 priority patent/US7592261B2/en
Priority to PCT/JP2003/003770 priority patent/WO2003085715A1/ja
Publication of JP2003303813A publication Critical patent/JP2003303813A/ja
Publication of JP2003303813A5 publication Critical patent/JP2003303813A5/ja
Application granted granted Critical
Publication of JP4115155B2 publication Critical patent/JP4115155B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
JP2002109189A 2002-04-11 2002-04-11 プラズマ処理装置の真空処理室内部品の帯電抑制方法 Expired - Fee Related JP4115155B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002109189A JP4115155B2 (ja) 2002-04-11 2002-04-11 プラズマ処理装置の真空処理室内部品の帯電抑制方法
TW092106050A TWI287261B (en) 2002-04-11 2003-03-19 Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system
AU2003227236A AU2003227236A1 (en) 2002-04-11 2003-03-27 Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system
US10/509,338 US7592261B2 (en) 2002-04-11 2003-03-27 Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system
PCT/JP2003/003770 WO2003085715A1 (en) 2002-04-11 2003-03-27 Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002109189A JP4115155B2 (ja) 2002-04-11 2002-04-11 プラズマ処理装置の真空処理室内部品の帯電抑制方法

Publications (3)

Publication Number Publication Date
JP2003303813A JP2003303813A (ja) 2003-10-24
JP2003303813A5 JP2003303813A5 (enExample) 2005-09-22
JP4115155B2 true JP4115155B2 (ja) 2008-07-09

Family

ID=28786567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002109189A Expired - Fee Related JP4115155B2 (ja) 2002-04-11 2002-04-11 プラズマ処理装置の真空処理室内部品の帯電抑制方法

Country Status (5)

Country Link
US (1) US7592261B2 (enExample)
JP (1) JP4115155B2 (enExample)
AU (1) AU2003227236A1 (enExample)
TW (1) TWI287261B (enExample)
WO (1) WO2003085715A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101232901B1 (ko) 2010-12-08 2013-02-13 엘아이지에이디피 주식회사 플라즈마처리장치

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4574174B2 (ja) * 2004-01-14 2010-11-04 株式会社日立ハイテクノロジーズ プラズマ処理装置及び電極
JP4527431B2 (ja) * 2004-04-08 2010-08-18 東京エレクトロン株式会社 プラズマ処理装置
USD553104S1 (en) 2004-04-21 2007-10-16 Tokyo Electron Limited Absorption board for an electric chuck used in semiconductor manufacture
JP5103049B2 (ja) * 2007-04-04 2012-12-19 株式会社日立ハイテクノロジーズ ウエハ載置用電極
US10069443B2 (en) * 2011-12-20 2018-09-04 Tokyo Electron Limited Dechuck control method and plasma processing apparatus
US20150228524A1 (en) * 2014-02-12 2015-08-13 Varian Semiconductor Equipment Associates, Inc. Plasma resistant electrostatic clamp
KR102759821B1 (ko) * 2019-01-30 2025-01-23 어플라이드 머티어리얼스, 인코포레이티드 진공 시스템을 세정하기 위한 방법, 기판의 진공 프로세싱을 위한 방법, 및 기판을 진공 프로세싱하기 위한 장치
TWI844352B (zh) * 2023-05-03 2024-06-01 劉華煒 半導體製程真空腔之靜電吸盤快速排氣結構

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0156244B1 (ko) 1989-04-18 1998-12-01 고다까 토시오 플라즈마 처리방법
US5625526A (en) * 1993-06-01 1997-04-29 Tokyo Electron Limited Electrostatic chuck
US6224312B1 (en) * 1996-11-18 2001-05-01 Applied Materials, Inc. Optimal trajectory robot motion
JP4112659B2 (ja) * 1997-12-01 2008-07-02 大陽日酸株式会社 希ガスの回収方法及び装置
EP1073777A2 (en) * 1998-04-14 2001-02-07 CVD Systems, Inc. Film deposition system
US6081414A (en) * 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
JP4060941B2 (ja) 1998-05-26 2008-03-12 東京エレクトロン株式会社 プラズマ処理方法
JP3323135B2 (ja) * 1998-08-31 2002-09-09 京セラ株式会社 静電チャック
KR100307628B1 (ko) * 1999-04-03 2001-10-29 윤종용 반도체 제조설비의 청정방법 및 이를 적용한 반도체 제조 설비
JP4547744B2 (ja) 1999-11-17 2010-09-22 東京エレクトロン株式会社 プリコート膜の形成方法、成膜装置のアイドリング方法、載置台構造及び成膜装置
JP4590031B2 (ja) 2000-07-26 2010-12-01 東京エレクトロン株式会社 被処理体の載置機構

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101232901B1 (ko) 2010-12-08 2013-02-13 엘아이지에이디피 주식회사 플라즈마처리장치

Also Published As

Publication number Publication date
JP2003303813A (ja) 2003-10-24
AU2003227236A1 (en) 2003-10-20
US20050146277A1 (en) 2005-07-07
TW200306626A (en) 2003-11-16
WO2003085715A1 (en) 2003-10-16
TWI287261B (en) 2007-09-21
US7592261B2 (en) 2009-09-22

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