TWI287261B - Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system - Google Patents
Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system Download PDFInfo
- Publication number
- TWI287261B TWI287261B TW092106050A TW92106050A TWI287261B TW I287261 B TWI287261 B TW I287261B TW 092106050 A TW092106050 A TW 092106050A TW 92106050 A TW92106050 A TW 92106050A TW I287261 B TWI287261 B TW I287261B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing chamber
- vacuum processing
- processing apparatus
- plasma
- plasma processing
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 148
- 238000000034 method Methods 0.000 title claims description 24
- 239000012530 fluid Substances 0.000 claims abstract description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000011810 insulating material Substances 0.000 claims abstract description 16
- 230000003068 static effect Effects 0.000 claims description 56
- 239000011261 inert gas Substances 0.000 claims description 21
- 230000005611 electricity Effects 0.000 claims description 13
- 229910052731 fluorine Inorganic materials 0.000 claims description 12
- 239000011737 fluorine Substances 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 230000001629 suppression Effects 0.000 claims description 4
- 239000003245 coal Substances 0.000 claims description 3
- 125000001153 fluoro group Chemical group F* 0.000 claims 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2
- 238000003672 processing method Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 22
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 9
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000010926 purge Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 42
- 230000007246 mechanism Effects 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 15
- 238000005530 etching Methods 0.000 description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000112 cooling gas Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 244000000188 Vaccinium ovalifolium Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000010702 perfluoropolyether Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002109189A JP4115155B2 (ja) | 2002-04-11 | 2002-04-11 | プラズマ処理装置の真空処理室内部品の帯電抑制方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200306626A TW200306626A (en) | 2003-11-16 |
| TWI287261B true TWI287261B (en) | 2007-09-21 |
Family
ID=28786567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092106050A TWI287261B (en) | 2002-04-11 | 2003-03-19 | Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7592261B2 (enExample) |
| JP (1) | JP4115155B2 (enExample) |
| AU (1) | AU2003227236A1 (enExample) |
| TW (1) | TWI287261B (enExample) |
| WO (1) | WO2003085715A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4574174B2 (ja) * | 2004-01-14 | 2010-11-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及び電極 |
| JP4527431B2 (ja) * | 2004-04-08 | 2010-08-18 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| USD553104S1 (en) | 2004-04-21 | 2007-10-16 | Tokyo Electron Limited | Absorption board for an electric chuck used in semiconductor manufacture |
| JP5103049B2 (ja) * | 2007-04-04 | 2012-12-19 | 株式会社日立ハイテクノロジーズ | ウエハ載置用電極 |
| KR101232901B1 (ko) | 2010-12-08 | 2013-02-13 | 엘아이지에이디피 주식회사 | 플라즈마처리장치 |
| US10069443B2 (en) * | 2011-12-20 | 2018-09-04 | Tokyo Electron Limited | Dechuck control method and plasma processing apparatus |
| US20150228524A1 (en) * | 2014-02-12 | 2015-08-13 | Varian Semiconductor Equipment Associates, Inc. | Plasma resistant electrostatic clamp |
| KR102759821B1 (ko) * | 2019-01-30 | 2025-01-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 진공 시스템을 세정하기 위한 방법, 기판의 진공 프로세싱을 위한 방법, 및 기판을 진공 프로세싱하기 위한 장치 |
| TWI844352B (zh) * | 2023-05-03 | 2024-06-01 | 劉華煒 | 半導體製程真空腔之靜電吸盤快速排氣結構 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0156244B1 (ko) | 1989-04-18 | 1998-12-01 | 고다까 토시오 | 플라즈마 처리방법 |
| US5625526A (en) * | 1993-06-01 | 1997-04-29 | Tokyo Electron Limited | Electrostatic chuck |
| US6224312B1 (en) * | 1996-11-18 | 2001-05-01 | Applied Materials, Inc. | Optimal trajectory robot motion |
| JP4112659B2 (ja) * | 1997-12-01 | 2008-07-02 | 大陽日酸株式会社 | 希ガスの回収方法及び装置 |
| EP1073777A2 (en) * | 1998-04-14 | 2001-02-07 | CVD Systems, Inc. | Film deposition system |
| US6081414A (en) * | 1998-05-01 | 2000-06-27 | Applied Materials, Inc. | Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system |
| JP4060941B2 (ja) | 1998-05-26 | 2008-03-12 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| JP3323135B2 (ja) * | 1998-08-31 | 2002-09-09 | 京セラ株式会社 | 静電チャック |
| KR100307628B1 (ko) * | 1999-04-03 | 2001-10-29 | 윤종용 | 반도체 제조설비의 청정방법 및 이를 적용한 반도체 제조 설비 |
| JP4547744B2 (ja) | 1999-11-17 | 2010-09-22 | 東京エレクトロン株式会社 | プリコート膜の形成方法、成膜装置のアイドリング方法、載置台構造及び成膜装置 |
| JP4590031B2 (ja) | 2000-07-26 | 2010-12-01 | 東京エレクトロン株式会社 | 被処理体の載置機構 |
-
2002
- 2002-04-11 JP JP2002109189A patent/JP4115155B2/ja not_active Expired - Fee Related
-
2003
- 2003-03-19 TW TW092106050A patent/TWI287261B/zh not_active IP Right Cessation
- 2003-03-27 WO PCT/JP2003/003770 patent/WO2003085715A1/ja not_active Ceased
- 2003-03-27 US US10/509,338 patent/US7592261B2/en not_active Expired - Fee Related
- 2003-03-27 AU AU2003227236A patent/AU2003227236A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| JP4115155B2 (ja) | 2008-07-09 |
| JP2003303813A (ja) | 2003-10-24 |
| AU2003227236A1 (en) | 2003-10-20 |
| US20050146277A1 (en) | 2005-07-07 |
| TW200306626A (en) | 2003-11-16 |
| WO2003085715A1 (en) | 2003-10-16 |
| US7592261B2 (en) | 2009-09-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |