JP4112615B2 - C4マイクロバンプ、tabマイクロバンプおよび超大規模相互接続の電解めっき用たわみ性連続カソード接点回路 - Google Patents

C4マイクロバンプ、tabマイクロバンプおよび超大規模相互接続の電解めっき用たわみ性連続カソード接点回路 Download PDF

Info

Publication number
JP4112615B2
JP4112615B2 JP51350197A JP51350197A JP4112615B2 JP 4112615 B2 JP4112615 B2 JP 4112615B2 JP 51350197 A JP51350197 A JP 51350197A JP 51350197 A JP51350197 A JP 51350197A JP 4112615 B2 JP4112615 B2 JP 4112615B2
Authority
JP
Japan
Prior art keywords
contact
wafer
cathode
flexible
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP51350197A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000500825A5 (OSRAM
JP2000500825A (ja
Inventor
クラフツ,ダグラス・イー
スウェイン,スティーブン・エム
健二 高橋
博文 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of JP2000500825A publication Critical patent/JP2000500825A/ja
Publication of JP2000500825A5 publication Critical patent/JP2000500825A5/ja
Application granted granted Critical
Publication of JP4112615B2 publication Critical patent/JP4112615B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • C25D5/022Electroplating of selected surface areas using masking means
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/005Contacting devices
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
JP51350197A 1995-09-27 1996-09-19 C4マイクロバンプ、tabマイクロバンプおよび超大規模相互接続の電解めっき用たわみ性連続カソード接点回路 Expired - Fee Related JP4112615B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/534,489 US5807469A (en) 1995-09-27 1995-09-27 Flexible continuous cathode contact circuit for electrolytic plating of C4, tab microbumps, and ultra large scale interconnects
US08/534,489 1995-09-27
PCT/US1996/015032 WO1997012079A1 (en) 1995-09-27 1996-09-19 Flexible continuous cathode contact circuit for electrolytic plating of c4, tab microbumps, and ultra large scale interconnects

Publications (3)

Publication Number Publication Date
JP2000500825A JP2000500825A (ja) 2000-01-25
JP2000500825A5 JP2000500825A5 (OSRAM) 2004-09-02
JP4112615B2 true JP4112615B2 (ja) 2008-07-02

Family

ID=24130274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51350197A Expired - Fee Related JP4112615B2 (ja) 1995-09-27 1996-09-19 C4マイクロバンプ、tabマイクロバンプおよび超大規模相互接続の電解めっき用たわみ性連続カソード接点回路

Country Status (6)

Country Link
US (2) US5807469A (OSRAM)
EP (1) EP0859877B1 (OSRAM)
JP (1) JP4112615B2 (OSRAM)
AU (1) AU7076496A (OSRAM)
DE (1) DE69632591T2 (OSRAM)
WO (1) WO1997012079A1 (OSRAM)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6375741B2 (en) 1991-03-06 2002-04-23 Timothy J. Reardon Semiconductor processing spray coating apparatus
US6752584B2 (en) * 1996-07-15 2004-06-22 Semitool, Inc. Transfer devices for handling microelectronic workpieces within an environment of a processing machine and methods of manufacturing and using such devices in the processing of microelectronic workpieces
US6921467B2 (en) * 1996-07-15 2005-07-26 Semitool, Inc. Processing tools, components of processing tools, and method of making and using same for electrochemical processing of microelectronic workpieces
US6276072B1 (en) 1997-07-10 2001-08-21 Applied Materials, Inc. Method and apparatus for heating and cooling substrates
EP1019954B1 (en) 1998-02-04 2013-05-15 Applied Materials, Inc. Method and apparatus for low-temperature annealing of electroplated copper micro-structures in the production of a microelectronic device
US7244677B2 (en) 1998-02-04 2007-07-17 Semitool. Inc. Method for filling recessed micro-structures with metallization in the production of a microelectronic device
US6632292B1 (en) 1998-03-13 2003-10-14 Semitool, Inc. Selective treatment of microelectronic workpiece surfaces
US6565729B2 (en) * 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
TWI223678B (en) * 1998-03-20 2004-11-11 Semitool Inc Process for applying a metal structure to a workpiece, the treated workpiece and a solution for electroplating copper
DE69929967T2 (de) * 1998-04-21 2007-05-24 Applied Materials, Inc., Santa Clara Elektroplattierungssystem und verfahren zur elektroplattierung auf substraten
US6416647B1 (en) 1998-04-21 2002-07-09 Applied Materials, Inc. Electro-chemical deposition cell for face-up processing of single semiconductor substrates
US6994776B2 (en) * 1998-06-01 2006-02-07 Semitool Inc. Method and apparatus for low temperature annealing of metallization micro-structure in the production of a microelectronic device
US6497801B1 (en) * 1998-07-10 2002-12-24 Semitool Inc Electroplating apparatus with segmented anode array
US6267853B1 (en) 1999-07-09 2001-07-31 Applied Materials, Inc. Electro-chemical deposition system
US6251236B1 (en) * 1998-11-30 2001-06-26 Applied Materials, Inc. Cathode contact ring for electrochemical deposition
US6228233B1 (en) 1998-11-30 2001-05-08 Applied Materials, Inc. Inflatable compliant bladder assembly
US6258220B1 (en) * 1998-11-30 2001-07-10 Applied Materials, Inc. Electro-chemical deposition system
WO2000032835A2 (en) * 1998-11-30 2000-06-08 Applied Materials, Inc. Electro-chemical deposition system
US6613214B2 (en) 1998-11-30 2003-09-02 Applied Materials, Inc. Electric contact element for electrochemical deposition system and method
US6254760B1 (en) 1999-03-05 2001-07-03 Applied Materials, Inc. Electro-chemical deposition system and method
US6251235B1 (en) * 1999-03-30 2001-06-26 Nutool, Inc. Apparatus for forming an electrical contact with a semiconductor substrate
US7427337B2 (en) * 1998-12-01 2008-09-23 Novellus Systems, Inc. System for electropolishing and electrochemical mechanical polishing
US7578923B2 (en) * 1998-12-01 2009-08-25 Novellus Systems, Inc. Electropolishing system and process
DE19859466C2 (de) 1998-12-22 2002-04-25 Steag Micro Tech Gmbh Vorrichtung und Verfahren zum Behandeln von Substraten
WO2000040779A1 (en) * 1998-12-31 2000-07-13 Semitool, Inc. Method, chemistry, and apparatus for high deposition rate solder electroplating on a microelectronic workpiece
US7192494B2 (en) 1999-03-05 2007-03-20 Applied Materials, Inc. Method and apparatus for annealing copper films
US6136163A (en) * 1999-03-05 2000-10-24 Applied Materials, Inc. Apparatus for electro-chemical deposition with thermal anneal chamber
US6197171B1 (en) * 1999-03-31 2001-03-06 International Business Machines Corporation Pin contact mechanism for plating pin grid arrays
US6837978B1 (en) 1999-04-08 2005-01-04 Applied Materials, Inc. Deposition uniformity control for electroplating apparatus, and associated method
US6582578B1 (en) 1999-04-08 2003-06-24 Applied Materials, Inc. Method and associated apparatus for tilting a substrate upon entry for metal deposition
US6557237B1 (en) * 1999-04-08 2003-05-06 Applied Materials, Inc. Removable modular cell for electro-chemical plating and method
US6551484B2 (en) 1999-04-08 2003-04-22 Applied Materials, Inc. Reverse voltage bias for electro-chemical plating system and method
US6571657B1 (en) 1999-04-08 2003-06-03 Applied Materials Inc. Multiple blade robot adjustment apparatus and associated method
US6585876B2 (en) 1999-04-08 2003-07-01 Applied Materials Inc. Flow diffuser to be used in electro-chemical plating system and method
US6662673B1 (en) 1999-04-08 2003-12-16 Applied Materials, Inc. Linear motion apparatus and associated method
US6551488B1 (en) 1999-04-08 2003-04-22 Applied Materials, Inc. Segmenting of processing system into wet and dry areas
US7351315B2 (en) 2003-12-05 2008-04-01 Semitool, Inc. Chambers, systems, and methods for electrochemically processing microfeature workpieces
US7160421B2 (en) 1999-04-13 2007-01-09 Semitool, Inc. Turning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US7020537B2 (en) * 1999-04-13 2006-03-28 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US6916412B2 (en) * 1999-04-13 2005-07-12 Semitool, Inc. Adaptable electrochemical processing chamber
US7351314B2 (en) 2003-12-05 2008-04-01 Semitool, Inc. Chambers, systems, and methods for electrochemically processing microfeature workpieces
US7264698B2 (en) * 1999-04-13 2007-09-04 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US7438788B2 (en) * 1999-04-13 2008-10-21 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US7585398B2 (en) * 1999-04-13 2009-09-08 Semitool, Inc. Chambers, systems, and methods for electrochemically processing microfeature workpieces
JP4288010B2 (ja) * 1999-04-13 2009-07-01 セミトゥール・インコーポレイテッド 処理流体の流れ具合を向上させる処理チャンバを備えた加工物処理装置
US7189318B2 (en) * 1999-04-13 2007-03-13 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US20030038035A1 (en) * 2001-05-30 2003-02-27 Wilson Gregory J. Methods and systems for controlling current in electrochemical processing of microelectronic workpieces
US6368475B1 (en) * 2000-03-21 2002-04-09 Semitool, Inc. Apparatus for electrochemically processing a microelectronic workpiece
US6516815B1 (en) 1999-07-09 2003-02-11 Applied Materials, Inc. Edge bead removal/spin rinse dry (EBR/SRD) module
US6423636B1 (en) 1999-11-19 2002-07-23 Applied Materials, Inc. Process sequence for improved seed layer productivity and achieving 3mm edge exclusion for a copper metalization process on semiconductor wafer
US20050183959A1 (en) * 2000-04-13 2005-08-25 Wilson Gregory J. Tuning electrodes used in a reactor for electrochemically processing a microelectric workpiece
US6913680B1 (en) 2000-05-02 2005-07-05 Applied Materials, Inc. Method of application of electrical biasing to enhance metal deposition
AU2001259504A1 (en) * 2000-05-24 2001-12-03 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US20040079633A1 (en) * 2000-07-05 2004-04-29 Applied Materials, Inc. Apparatus for electro chemical deposition of copper metallization with the capability of in-situ thermal annealing
US6576110B2 (en) 2000-07-07 2003-06-10 Applied Materials, Inc. Coated anode apparatus and associated method
AU2001282879A1 (en) * 2000-07-08 2002-01-21 Semitool, Inc. Methods and apparatus for processing microelectronic workpieces using metrology
US6478937B2 (en) 2001-01-19 2002-11-12 Applied Material, Inc. Substrate holder system with substrate extension apparatus and associated method
US6908540B2 (en) * 2001-07-13 2005-06-21 Applied Materials, Inc. Method and apparatus for encapsulation of an edge of a substrate during an electro-chemical deposition process
WO2003018874A2 (en) 2001-08-31 2003-03-06 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US6802947B2 (en) * 2001-10-16 2004-10-12 Applied Materials, Inc. Apparatus and method for electro chemical plating using backside electrical contacts
US6770565B2 (en) 2002-01-08 2004-08-03 Applied Materials Inc. System for planarizing metal conductive layers
US6911136B2 (en) 2002-04-29 2005-06-28 Applied Materials, Inc. Method for regulating the electrical power applied to a substrate during an immersion process
US6893505B2 (en) * 2002-05-08 2005-05-17 Semitool, Inc. Apparatus and method for regulating fluid flows, such as flows of electrochemical processing fluids
US7189313B2 (en) * 2002-05-09 2007-03-13 Applied Materials, Inc. Substrate support with fluid retention band
US20040108212A1 (en) * 2002-12-06 2004-06-10 Lyndon Graham Apparatus and methods for transferring heat during chemical processing of microelectronic workpieces
JP4303484B2 (ja) * 2003-01-21 2009-07-29 大日本スクリーン製造株式会社 メッキ装置
US7138039B2 (en) 2003-01-21 2006-11-21 Applied Materials, Inc. Liquid isolation of contact rings
US7087144B2 (en) 2003-01-31 2006-08-08 Applied Materials, Inc. Contact ring with embedded flexible contacts
US7025861B2 (en) 2003-02-06 2006-04-11 Applied Materials Contact plating apparatus
US7205153B2 (en) 2003-04-11 2007-04-17 Applied Materials, Inc. Analytical reagent for acid copper sulfate solutions
US7311810B2 (en) 2003-04-18 2007-12-25 Applied Materials, Inc. Two position anneal chamber
US20050167275A1 (en) 2003-10-22 2005-08-04 Arthur Keigler Method and apparatus for fluid processing a workpiece
US7727366B2 (en) 2003-10-22 2010-06-01 Nexx Systems, Inc. Balancing pressure to improve a fluid seal
US20050092611A1 (en) * 2003-11-03 2005-05-05 Semitool, Inc. Bath and method for high rate copper deposition
US20050133406A1 (en) * 2003-12-19 2005-06-23 Wellington Scott L. Systems and methods of producing a crude product
NL1027770C2 (nl) * 2003-12-19 2006-07-13 Shell Int Research Systemen, methoden en katalysatoren voor het produceren van een ruwe-oliehoudend product.
US20070000810A1 (en) * 2003-12-19 2007-01-04 Bhan Opinder K Method for producing a crude product with reduced tan
US20070000808A1 (en) * 2003-12-19 2007-01-04 Bhan Opinder K Method and catalyst for producing a crude product having selected properties
US20050167327A1 (en) * 2003-12-19 2005-08-04 Bhan Opinder K. Systems, methods, and catalysts for producing a crude product
US7745369B2 (en) * 2003-12-19 2010-06-29 Shell Oil Company Method and catalyst for producing a crude product with minimal hydrogen uptake
US20100098602A1 (en) * 2003-12-19 2010-04-22 Opinder Kishan Bhan Systems, methods, and catalysts for producing a crude product
US20050283993A1 (en) * 2004-06-18 2005-12-29 Qunwei Wu Method and apparatus for fluid processing and drying a workpiece
US7285195B2 (en) 2004-06-24 2007-10-23 Applied Materials, Inc. Electric field reducing thrust plate
TWI415930B (zh) * 2005-04-06 2013-11-21 Shell Int Research 減少液態含烴原料總酸值(tan)的方法
CN101166811A (zh) * 2005-04-11 2008-04-23 国际壳牌研究有限公司 生产具有降低氮含量的原油产品的方法和催化剂
RU2007141711A (ru) * 2005-04-11 2009-05-20 Шелл Интернэшнл Рисерч Маатсхаппий Б.В. (NL) Способ получения полупродукта с пониженным содержанием азота и катализатора для его осуществления
WO2006110546A2 (en) * 2005-04-11 2006-10-19 Shell Internationale Research Maatschappij B.V. Systems, methods, and catalysts for producing a crude product
CN101166808B (zh) * 2005-04-11 2013-03-27 国际壳牌研究有限公司 生产具有降低mcr含量的原油产品的方法和催化剂
WO2007149923A2 (en) * 2006-06-22 2007-12-27 Shell Oil Company Method for producing a crude product with a long-life catalyst
US20080087575A1 (en) * 2006-10-06 2008-04-17 Bhan Opinder K Systems and methods for producing a crude product and compositions thereof
TWI658175B (zh) * 2014-02-25 2019-05-01 日商荏原製作所股份有限公司 陽極單元及具備該陽極單元之鍍覆裝置
CN106711103B (zh) * 2016-11-11 2019-02-05 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) 一种半导体晶圆电镀用导电片及接电点密封结构

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500394A (en) * 1984-05-16 1985-02-19 At&T Technologies, Inc. Contacting a surface for plating thereon
US5118584A (en) * 1990-06-01 1992-06-02 Eastman Kodak Company Method of producing microbump circuits for flip chip mounting
US5228976A (en) * 1990-07-09 1993-07-20 At&T Bell Laboratories Hydrodynamically modulated hull cell
US5256274A (en) * 1990-08-01 1993-10-26 Jaime Poris Selective metal electrodeposition process
US5413646A (en) * 1991-02-08 1995-05-09 Blount, Inc. Heat-treatable chromium
SE467976B (sv) * 1991-02-20 1992-10-12 Dcm Innovation Ab Anordning foer elektroplaetering, vid framstaellning av matriser foer tillverkning av t ex cd-skivor samt foerfarande foer tillverkning av matriser medelst anordningen
US5264787A (en) * 1991-08-30 1993-11-23 Hughes Aircraft Company Rigid-flex circuits with raised features as IC test probes
US5223110A (en) * 1991-12-11 1993-06-29 Microelectronics And Computer Technology Corporation Apparatus for electroplating electrical contacts
GB2263980B (en) * 1992-02-07 1996-04-10 Marconi Gec Ltd Apparatus and method for testing bare dies
DE4203487A1 (de) * 1992-02-07 1993-08-12 Philips Patentverwaltung Mehrstufenkollektor fuer elektrodenstrahlroehren
US5240580A (en) * 1992-04-02 1993-08-31 Vlsi Technology, Inc. Conmag shield
JP3200468B2 (ja) * 1992-05-21 2001-08-20 日本エレクトロプレイテイング・エンジニヤース株式会社 ウエーハ用めっき装置
WO1993026143A1 (de) * 1992-06-15 1993-12-23 Dyconex Patente Ag Verfahren zur herstellung von leiterplatten unter verwendung eines halbzeuges mit extrem dichter verdrahtung für die signalführung
US5359768A (en) * 1992-07-30 1994-11-01 Intel Corporation Method for mounting very small integrated circuit package on PCB
US5282944A (en) * 1992-07-30 1994-02-01 The United States Of America As Represented By The United States Department Of Energy Ion source based on the cathodic arc
DE69400762T2 (de) * 1993-02-16 1997-06-05 Agfa Gevaert Nv Vorrichtung zur elektrolytischer Rückgewinnung von Silber
US5317235A (en) * 1993-03-22 1994-05-31 Ism Technolog Magnetically-filtered cathodic arc plasma apparatus
US5369545A (en) * 1993-06-30 1994-11-29 Intel Corporation De-coupling capacitor on the top of the silicon die by eutectic flip bonding
US5409593A (en) * 1993-12-03 1995-04-25 Sifco Industries, Inc. Method and apparatus for selective electroplating using soluble anodes
US5426345A (en) * 1994-01-18 1995-06-20 Andrex Radiation Products A/S High voltage electronic tube with intermediate electrode
US5516416A (en) * 1994-12-14 1996-05-14 International Business Machines Corporation Apparatus and method for electroplating pin grid array packaging modules

Also Published As

Publication number Publication date
EP0859877A4 (en) 1999-10-13
DE69632591T2 (de) 2005-06-09
US5807469A (en) 1998-09-15
WO1997012079A1 (en) 1997-04-03
DE69632591D1 (de) 2004-07-01
JP2000500825A (ja) 2000-01-25
AU7076496A (en) 1997-04-17
EP0859877B1 (en) 2004-05-26
US5871626A (en) 1999-02-16
EP0859877A1 (en) 1998-08-26

Similar Documents

Publication Publication Date Title
JP4112615B2 (ja) C4マイクロバンプ、tabマイクロバンプおよび超大規模相互接続の電解めっき用たわみ性連続カソード接点回路
US7078796B2 (en) Corrosion-resistant copper bond pad and integrated device
US7935568B2 (en) Wafer-level fabrication of lidded chips with electrodeposited dielectric coating
KR100264479B1 (ko) 범프전극의 구조와 그 형성방법
US6627824B1 (en) Support circuit with a tapered through-hole for a semiconductor chip assembly
US20050001316A1 (en) Corrosion-resistant bond pad and integrated device
US20080064142A1 (en) Method for fabricating a wafer level package having through wafer vias for external package connectivity
EP2087516A2 (en) Wafer-level fabrication of lidded chips with electrodeposited dielectric coating
US6452281B1 (en) Semiconductor integrated circuit and fabrication process therefor
KR100608186B1 (ko) 반도체 장치의 제조 방법
US5271822A (en) Methods and apparatus for electroplating electrical contacts
US20050045697A1 (en) Wafer-level chip scale package
TW201721826A (zh) 半導體裝置及其製造方法
GB2095904A (en) Semiconductor device with built-up low resistance contact and laterally conducting second contact
US7442634B2 (en) Method for constructing contact formations
JP3836375B2 (ja) 半導体装置の製造方法
JPH11163015A (ja) メッキ装置
TW586169B (en) Semiconductor die package with semiconductor die having side electrical connection
US20220139815A1 (en) Semiconductor device and method manufacturing thereof
CN100524711C (zh) 使用蚀刻引线框的半导体设备和半导体封装的制造方法
JP2023142146A (ja) パッケージ基板、半導体装置
CN118315370A (zh) 芯片、芯片封装结构及芯片制造方法
JP2003197815A (ja) 半導体装置
JPS5828829A (ja) 半導体ウエハ−のメツキ装置
JPH09186190A (ja) 突起電極の構造およびその形成方法

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050809

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050726

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051020

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060822

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20061122

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20070122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070105

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070227

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070522

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070816

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20071018

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080311

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080410

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110418

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120418

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120418

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130418

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130418

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140418

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees