JP4112175B2 - ハイブリッド半導体イメージング・デバイス - Google Patents

ハイブリッド半導体イメージング・デバイス Download PDF

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Publication number
JP4112175B2
JP4112175B2 JP2000525930A JP2000525930A JP4112175B2 JP 4112175 B2 JP4112175 B2 JP 4112175B2 JP 2000525930 A JP2000525930 A JP 2000525930A JP 2000525930 A JP2000525930 A JP 2000525930A JP 4112175 B2 JP4112175 B2 JP 4112175B2
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Japan
Prior art keywords
readout
substrate
detector
contact
cell
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JP2000525930A
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Japanese (ja)
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JP2001527294A5 (enExample
JP2001527294A (ja
Inventor
イー スパルティオティス コンスタンティノス
エバンゲロス サラキノス ミルティアディス
イラリ ピアティア ジョウニ
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アイピーエル・インテレクチュアル・プロパティ・ライセンシング・リミテッド
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Publication of JP2001527294A5 publication Critical patent/JP2001527294A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1843—Infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Measurement Of Radiation (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Photographic Developing Apparatuses (AREA)
JP2000525930A 1997-12-18 1998-11-16 ハイブリッド半導体イメージング・デバイス Expired - Lifetime JP4112175B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9726765.2 1997-12-18
GB9726765A GB2332562B (en) 1997-12-18 1997-12-18 Hybrid semiconductor imaging device
PCT/EP1998/007522 WO1999033116A1 (en) 1997-12-18 1998-11-16 Hybrid semiconductor imaging device

Publications (3)

Publication Number Publication Date
JP2001527294A JP2001527294A (ja) 2001-12-25
JP2001527294A5 JP2001527294A5 (enExample) 2006-01-05
JP4112175B2 true JP4112175B2 (ja) 2008-07-02

Family

ID=10823835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000525930A Expired - Lifetime JP4112175B2 (ja) 1997-12-18 1998-11-16 ハイブリッド半導体イメージング・デバイス

Country Status (9)

Country Link
US (1) US6323475B1 (enExample)
EP (1) EP1042814B1 (enExample)
JP (1) JP4112175B2 (enExample)
AT (1) ATE469439T1 (enExample)
AU (1) AU1874599A (enExample)
DE (1) DE69841688D1 (enExample)
GB (1) GB2332562B (enExample)
IL (1) IL136704A (enExample)
WO (1) WO1999033116A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011145171A1 (ja) * 2010-05-18 2011-11-24 キヤノン株式会社 撮像システム及びその制御方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19933471A1 (de) * 1999-07-20 2001-02-01 Daimler Chrysler Ag Bildaufnehmer mit integrierter Signalverarbeitung und Bildaufnahmeverfahren
US7189971B2 (en) * 2002-02-15 2007-03-13 Oy Ajat Ltd Radiation imaging device and system
US7170062B2 (en) * 2002-03-29 2007-01-30 Oy Ajat Ltd. Conductive adhesive bonded semiconductor substrates for radiation imaging devices
US6841784B2 (en) * 2002-07-02 2005-01-11 Ray Therapy Imaging Ab Radiation sensor device
US6844543B2 (en) * 2002-07-03 2005-01-18 The Regents Of The University Of California Quantitation of absorbed or deposited materials on a substrate that measures energy deposition
US7223981B1 (en) 2002-12-04 2007-05-29 Aguila Technologies Inc. Gamma ray detector modules
US7247858B2 (en) * 2003-04-10 2007-07-24 Agfa Healthcare, N.V. Method for creating a contiguous image using multiple X-ray imagers
DE10357135B4 (de) * 2003-12-06 2007-01-04 X-Fab Semiconductor Foundries Ag Fotodetektor mit Transimpendanzverstärker und Auswerteelektronik in monolithischer Integration und Herstellungsverfahren
US7217915B2 (en) * 2004-05-07 2007-05-15 Sun Microsystems, Inc. Method and apparatus for detecting the position of light which is incident to a semiconductor die
GB2441814B (en) 2006-09-07 2012-04-11 Detection Technology Oy Photodiode array output signal multiplexing
US20110001052A1 (en) * 2006-12-04 2011-01-06 Luc Struye Computed radiography system
JP2008277511A (ja) * 2007-04-27 2008-11-13 Fujifilm Corp 撮像素子及び撮像装置
US8368469B2 (en) * 2010-03-10 2013-02-05 Purdue Research Foundation Silicon-on-insulator high power amplifiers
WO2015125443A1 (ja) * 2014-02-19 2015-08-27 パナソニックＩｐマネジメント株式会社 受光デバイスおよびその製造方法
US20150276945A1 (en) * 2014-03-25 2015-10-01 Oy Ajat Ltd. Semiconductor bump-bonded x-ray imaging device
US10686003B2 (en) * 2015-12-31 2020-06-16 General Electric Company Radiation detector assembly
WO2018085602A1 (en) 2016-11-04 2018-05-11 Hologic, Inc. Medical imaging device and method of operating a medical imaging device
SE542767C2 (en) * 2018-05-15 2020-07-07 Xcounter Ab Sensor unit and radiation detector
RU2730045C2 (ru) * 2018-09-11 2020-08-14 Объединенный Институт Ядерных Исследований (Оияи) Гибридный пиксельный детектор ионизирующих излучений
EP3690490A1 (en) * 2019-02-04 2020-08-05 ams International AG X-ray detector component, x-ray detection module, imaging device and method for manufacturing an x-ray detector component
WO2020228935A1 (en) 2019-05-13 2020-11-19 Direct Conversion Ab Method of reading out data in a radiation detector, radiation detector and imaging apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2581251B1 (fr) * 1985-04-30 1987-09-11 Thomson Csf Dispositif d'aboutement optique de detecteurs photosensibles
EP0415541B1 (en) * 1989-07-29 1994-10-05 Shimadzu Corporation Semiconductor-based radiation image detector and its manufacturing method
FR2652655A1 (fr) 1989-10-04 1991-04-05 Commissariat Energie Atomique Dispositif matriciel de grandes dimensions pour la prise ou la restitution d'images.
US5245191A (en) * 1992-04-14 1993-09-14 The Board Of Regents Of The University Of Arizona Semiconductor sensor for gamma-ray tomographic imaging system
FR2693033B1 (fr) * 1992-06-30 1994-08-19 Commissariat Energie Atomique Dispositif d'imagerie de grande dimension.
US5336879A (en) 1993-05-28 1994-08-09 David Sarnoff Research Center, Inc. Pixel array having image forming pixel elements integral with peripheral circuit elements
GB2289983B (en) 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
GB2305096B (en) 1995-08-29 1997-09-10 Simage Oy Imaging system and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011145171A1 (ja) * 2010-05-18 2011-11-24 キヤノン株式会社 撮像システム及びその制御方法
US8625742B2 (en) 2010-05-18 2014-01-07 Canon Kabushiki Kaisha Imaging system and control method therefor
JP5642166B2 (ja) * 2010-05-18 2014-12-17 キヤノン株式会社 撮像システム及びその制御方法

Also Published As

Publication number Publication date
ATE469439T1 (de) 2010-06-15
IL136704A (en) 2004-07-25
DE69841688D1 (de) 2010-07-08
JP2001527294A (ja) 2001-12-25
EP1042814A1 (en) 2000-10-11
GB9726765D0 (en) 1998-02-18
AU1874599A (en) 1999-07-12
EP1042814B1 (en) 2010-05-26
GB2332562B (en) 2000-01-12
GB2332562A (en) 1999-06-23
IL136704A0 (en) 2001-06-14
US6323475B1 (en) 2001-11-27
WO1999033116A1 (en) 1999-07-01
GB2332562A9 (en)

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