ATE469439T1 - Hybride halbleiter-bildaufnahmevorrichtung - Google Patents

Hybride halbleiter-bildaufnahmevorrichtung

Info

Publication number
ATE469439T1
ATE469439T1 AT98963497T AT98963497T ATE469439T1 AT E469439 T1 ATE469439 T1 AT E469439T1 AT 98963497 T AT98963497 T AT 98963497T AT 98963497 T AT98963497 T AT 98963497T AT E469439 T1 ATE469439 T1 AT E469439T1
Authority
AT
Austria
Prior art keywords
readout
detector
substrate
recording device
image recording
Prior art date
Application number
AT98963497T
Other languages
English (en)
Inventor
Konstantinos Spartiotis
Miltiadis Sarakinos
Jouni Pyyhtia
Original Assignee
Ipl Intellectual Property Lice
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ipl Intellectual Property Lice filed Critical Ipl Intellectual Property Lice
Application granted granted Critical
Publication of ATE469439T1 publication Critical patent/ATE469439T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/1465—Infrared imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
AT98963497T 1997-12-18 1998-11-16 Hybride halbleiter-bildaufnahmevorrichtung ATE469439T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9726765A GB2332562B (en) 1997-12-18 1997-12-18 Hybrid semiconductor imaging device
PCT/EP1998/007522 WO1999033116A1 (en) 1997-12-18 1998-11-16 Hybrid semiconductor imaging device

Publications (1)

Publication Number Publication Date
ATE469439T1 true ATE469439T1 (de) 2010-06-15

Family

ID=10823835

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98963497T ATE469439T1 (de) 1997-12-18 1998-11-16 Hybride halbleiter-bildaufnahmevorrichtung

Country Status (9)

Country Link
US (1) US6323475B1 (de)
EP (1) EP1042814B1 (de)
JP (1) JP4112175B2 (de)
AT (1) ATE469439T1 (de)
AU (1) AU1874599A (de)
DE (1) DE69841688D1 (de)
GB (1) GB2332562B (de)
IL (1) IL136704A (de)
WO (1) WO1999033116A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19933471A1 (de) * 1999-07-20 2001-02-01 Daimler Chrysler Ag Bildaufnehmer mit integrierter Signalverarbeitung und Bildaufnahmeverfahren
US7189971B2 (en) * 2002-02-15 2007-03-13 Oy Ajat Ltd Radiation imaging device and system
US7170062B2 (en) * 2002-03-29 2007-01-30 Oy Ajat Ltd. Conductive adhesive bonded semiconductor substrates for radiation imaging devices
US6841784B2 (en) * 2002-07-02 2005-01-11 Ray Therapy Imaging Ab Radiation sensor device
US6844543B2 (en) * 2002-07-03 2005-01-18 The Regents Of The University Of California Quantitation of absorbed or deposited materials on a substrate that measures energy deposition
US7223981B1 (en) * 2002-12-04 2007-05-29 Aguila Technologies Inc. Gamma ray detector modules
US7247858B2 (en) * 2003-04-10 2007-07-24 Agfa Healthcare, N.V. Method for creating a contiguous image using multiple X-ray imagers
DE10357135B4 (de) * 2003-12-06 2007-01-04 X-Fab Semiconductor Foundries Ag Fotodetektor mit Transimpendanzverstärker und Auswerteelektronik in monolithischer Integration und Herstellungsverfahren
US7217915B2 (en) * 2004-05-07 2007-05-15 Sun Microsystems, Inc. Method and apparatus for detecting the position of light which is incident to a semiconductor die
GB2441814B (en) 2006-09-07 2012-04-11 Detection Technology Oy Photodiode array output signal multiplexing
US20110001052A1 (en) * 2006-12-04 2011-01-06 Luc Struye Computed radiography system
JP2008277511A (ja) * 2007-04-27 2008-11-13 Fujifilm Corp 撮像素子及び撮像装置
US8368469B2 (en) * 2010-03-10 2013-02-05 Purdue Research Foundation Silicon-on-insulator high power amplifiers
WO2011145171A1 (ja) * 2010-05-18 2011-11-24 キヤノン株式会社 撮像システム及びその制御方法
JPWO2015125443A1 (ja) * 2014-02-19 2017-03-30 パナソニックＩｐマネジメント株式会社 受光デバイスおよびその製造方法
US20150276945A1 (en) * 2014-03-25 2015-10-01 Oy Ajat Ltd. Semiconductor bump-bonded x-ray imaging device
US10686003B2 (en) * 2015-12-31 2020-06-16 General Electric Company Radiation detector assembly
ES2858363T3 (es) 2016-11-04 2021-09-30 Hologic Inc Dispositivo de obtención de imágenes médicas
SE542767C2 (en) * 2018-05-15 2020-07-07 Xcounter Ab Sensor unit and radiation detector
RU2730045C2 (ru) * 2018-09-11 2020-08-14 Объединенный Институт Ядерных Исследований (Оияи) Гибридный пиксельный детектор ионизирующих излучений
EP3690490A1 (de) * 2019-02-04 2020-08-05 ams International AG Röntgendetektorkomponente, röntgendetektionsmodul, bildgebungsvorrichtung und verfahren zur herstellung einer röntgendetektorkomponente

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2581251B1 (fr) * 1985-04-30 1987-09-11 Thomson Csf Dispositif d'aboutement optique de detecteurs photosensibles
EP0415541B1 (de) * 1989-07-29 1994-10-05 Shimadzu Corporation Halbleiterstrahlungsbilddetektor und sein Herstellungsverfahren
FR2652655A1 (fr) 1989-10-04 1991-04-05 Commissariat Energie Atomique Dispositif matriciel de grandes dimensions pour la prise ou la restitution d'images.
US5245191A (en) * 1992-04-14 1993-09-14 The Board Of Regents Of The University Of Arizona Semiconductor sensor for gamma-ray tomographic imaging system
FR2693033B1 (fr) * 1992-06-30 1994-08-19 Commissariat Energie Atomique Dispositif d'imagerie de grande dimension.
US5336879A (en) 1993-05-28 1994-08-09 David Sarnoff Research Center, Inc. Pixel array having image forming pixel elements integral with peripheral circuit elements
GB2289983B (en) * 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
GB2305096B (en) 1995-08-29 1997-09-10 Simage Oy Imaging system and method

Also Published As

Publication number Publication date
IL136704A0 (en) 2001-06-14
US6323475B1 (en) 2001-11-27
IL136704A (en) 2004-07-25
EP1042814B1 (de) 2010-05-26
JP2001527294A (ja) 2001-12-25
WO1999033116A1 (en) 1999-07-01
GB2332562B (en) 2000-01-12
GB2332562A9 (en)
AU1874599A (en) 1999-07-12
GB9726765D0 (en) 1998-02-18
DE69841688D1 (de) 2010-07-08
EP1042814A1 (de) 2000-10-11
GB2332562A (en) 1999-06-23
JP4112175B2 (ja) 2008-07-02

Similar Documents

Publication Publication Date Title
DE69841688D1 (de) Hybride halbleiter-bildaufnahmevorrichtung
ATE225571T1 (de) Elektrische verbindungsanordnung mit hoher packungsdichte
US5132541A (en) Sensor matrix
WO2004105137A1 (ja) 光検出装置
TW334573B (en) Focal plane array for hybrid thermal imaging system and method
TW428258B (en) Semiconductor device with connection terminals in the form of a grid array
HK1073389A1 (en) Semiconductor device and method of manufacturing the same
NL190090C (nl) Platte doos voor inrichtingen met geintegreerde ketens.
JP2001527294A5 (de)
ATE440383T1 (de) Schaltungssubstrat und verfahren
WO2000035262A3 (en) Method for mounting an electronic component
KR930022571A (ko) 전하 전송장치 및 고체 촬상장치
WO2001063307A1 (fr) Capteur et appareil d'inspection
JPH021522A (ja) 放射線検出素子
DE68905007T2 (de) Sensor fuer einen solventdetektor.
JPH0661471A (ja) テスト構造を有するｃｃｄイメージャおよびｃｃｄイメージャのテスト方法
GB1296498A (de)
SE9900962L (sv) Förfarande och anordning för komponentkontaktering
EP1434474A3 (de) Technik zum elektrischen Verbinden von elektrischen Signalen zwischen einem elektronischen Bauteil und einer mehrschichtigen Signalleitvorrichtung
FR3085575B1 (fr) Boitier de puce electronique
JPS595787A (ja) 最小フイ−ルド領域ｃｃｄ影像装置
JP2002506213A5 (de)
ATE356436T1 (de) Halbleiterchip mit oberflächenabdeckung gegen optische untersuchung der schaltungsstruktur
JPH03159799A (ja) データ担体
JPS62286372A (ja) 密着型イメ−ジセンサ

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties