IL136704A - Hybrid semiconductor imaging device - Google Patents

Hybrid semiconductor imaging device

Info

Publication number
IL136704A
IL136704A IL13670498A IL13670498A IL136704A IL 136704 A IL136704 A IL 136704A IL 13670498 A IL13670498 A IL 13670498A IL 13670498 A IL13670498 A IL 13670498A IL 136704 A IL136704 A IL 136704A
Authority
IL
Israel
Prior art keywords
readout
detector
substrate
substrates
contact
Prior art date
Application number
IL13670498A
Other languages
English (en)
Other versions
IL136704A0 (en
Original Assignee
Simage Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Simage Oy filed Critical Simage Oy
Publication of IL136704A0 publication Critical patent/IL136704A0/xx
Publication of IL136704A publication Critical patent/IL136704A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1843—Infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Measurement Of Radiation (AREA)
  • Photographic Developing Apparatuses (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
IL13670498A 1997-12-18 1998-11-16 Hybrid semiconductor imaging device IL136704A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9726765A GB2332562B (en) 1997-12-18 1997-12-18 Hybrid semiconductor imaging device
PCT/EP1998/007522 WO1999033116A1 (en) 1997-12-18 1998-11-16 Hybrid semiconductor imaging device

Publications (2)

Publication Number Publication Date
IL136704A0 IL136704A0 (en) 2001-06-14
IL136704A true IL136704A (en) 2004-07-25

Family

ID=10823835

Family Applications (1)

Application Number Title Priority Date Filing Date
IL13670498A IL136704A (en) 1997-12-18 1998-11-16 Hybrid semiconductor imaging device

Country Status (9)

Country Link
US (1) US6323475B1 (de)
EP (1) EP1042814B1 (de)
JP (1) JP4112175B2 (de)
AT (1) ATE469439T1 (de)
AU (1) AU1874599A (de)
DE (1) DE69841688D1 (de)
GB (1) GB2332562B (de)
IL (1) IL136704A (de)
WO (1) WO1999033116A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19933471A1 (de) * 1999-07-20 2001-02-01 Daimler Chrysler Ag Bildaufnehmer mit integrierter Signalverarbeitung und Bildaufnahmeverfahren
US7189971B2 (en) * 2002-02-15 2007-03-13 Oy Ajat Ltd Radiation imaging device and system
US7170062B2 (en) * 2002-03-29 2007-01-30 Oy Ajat Ltd. Conductive adhesive bonded semiconductor substrates for radiation imaging devices
US6841784B2 (en) * 2002-07-02 2005-01-11 Ray Therapy Imaging Ab Radiation sensor device
US6844543B2 (en) * 2002-07-03 2005-01-18 The Regents Of The University Of California Quantitation of absorbed or deposited materials on a substrate that measures energy deposition
US7223981B1 (en) * 2002-12-04 2007-05-29 Aguila Technologies Inc. Gamma ray detector modules
US7247858B2 (en) * 2003-04-10 2007-07-24 Agfa Healthcare, N.V. Method for creating a contiguous image using multiple X-ray imagers
DE10357135B4 (de) * 2003-12-06 2007-01-04 X-Fab Semiconductor Foundries Ag Fotodetektor mit Transimpendanzverstärker und Auswerteelektronik in monolithischer Integration und Herstellungsverfahren
US7217915B2 (en) * 2004-05-07 2007-05-15 Sun Microsystems, Inc. Method and apparatus for detecting the position of light which is incident to a semiconductor die
GB2441814B (en) * 2006-09-07 2012-04-11 Detection Technology Oy Photodiode array output signal multiplexing
US20110001052A1 (en) * 2006-12-04 2011-01-06 Luc Struye Computed radiography system
JP2008277511A (ja) * 2007-04-27 2008-11-13 Fujifilm Corp 撮像素子及び撮像装置
US8368469B2 (en) * 2010-03-10 2013-02-05 Purdue Research Foundation Silicon-on-insulator high power amplifiers
WO2011145171A1 (ja) 2010-05-18 2011-11-24 キヤノン株式会社 撮像システム及びその制御方法
WO2015125443A1 (ja) * 2014-02-19 2015-08-27 パナソニックＩｐマネジメント株式会社 受光デバイスおよびその製造方法
US20150276945A1 (en) * 2014-03-25 2015-10-01 Oy Ajat Ltd. Semiconductor bump-bonded x-ray imaging device
US10686003B2 (en) * 2015-12-31 2020-06-16 General Electric Company Radiation detector assembly
CN110121299A (zh) * 2016-11-04 2019-08-13 霍罗吉克公司 医学成像装置和操作医学成像装置的方法
SE542767C2 (en) 2018-05-15 2020-07-07 Xcounter Ab Sensor unit and radiation detector
RU2730045C2 (ru) * 2018-09-11 2020-08-14 Объединенный Институт Ядерных Исследований (Оияи) Гибридный пиксельный детектор ионизирующих излучений
EP3690490A1 (de) * 2019-02-04 2020-08-05 ams International AG Röntgendetektorkomponente, röntgendetektionsmodul, bildgebungsvorrichtung und verfahren zur herstellung einer röntgendetektorkomponente
CN113811794B (zh) 2019-05-13 2024-04-26 直接转换公司 读出辐射探测器中的数据的方法、辐射探测器和成像设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2581251B1 (fr) * 1985-04-30 1987-09-11 Thomson Csf Dispositif d'aboutement optique de detecteurs photosensibles
DE69013104T2 (de) * 1989-07-29 1995-03-23 Shimadzu Corp., Kyoto Halbleiterstrahlungsbilddetektor und sein Herstellungsverfahren.
FR2652655A1 (fr) 1989-10-04 1991-04-05 Commissariat Energie Atomique Dispositif matriciel de grandes dimensions pour la prise ou la restitution d'images.
US5245191A (en) * 1992-04-14 1993-09-14 The Board Of Regents Of The University Of Arizona Semiconductor sensor for gamma-ray tomographic imaging system
FR2693033B1 (fr) 1992-06-30 1994-08-19 Commissariat Energie Atomique Dispositif d'imagerie de grande dimension.
US5336879A (en) 1993-05-28 1994-08-09 David Sarnoff Research Center, Inc. Pixel array having image forming pixel elements integral with peripheral circuit elements
GB2289983B (en) * 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
GB2305096B (en) 1995-08-29 1997-09-10 Simage Oy Imaging system and method

Also Published As

Publication number Publication date
ATE469439T1 (de) 2010-06-15
DE69841688D1 (de) 2010-07-08
JP4112175B2 (ja) 2008-07-02
US6323475B1 (en) 2001-11-27
GB2332562B (en) 2000-01-12
EP1042814A1 (de) 2000-10-11
GB2332562A9 (en)
GB9726765D0 (en) 1998-02-18
JP2001527294A (ja) 2001-12-25
GB2332562A (en) 1999-06-23
EP1042814B1 (de) 2010-05-26
IL136704A0 (en) 2001-06-14
WO1999033116A1 (en) 1999-07-01
AU1874599A (en) 1999-07-12

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