IL136704A - Hybrid semiconductor imaging device - Google Patents
Hybrid semiconductor imaging deviceInfo
- Publication number
- IL136704A IL136704A IL13670498A IL13670498A IL136704A IL 136704 A IL136704 A IL 136704A IL 13670498 A IL13670498 A IL 13670498A IL 13670498 A IL13670498 A IL 13670498A IL 136704 A IL136704 A IL 136704A
- Authority
- IL
- Israel
- Prior art keywords
- readout
- detector
- substrate
- substrates
- contact
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 72
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 190
- 230000005855 radiation Effects 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 15
- 238000012546 transfer Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000013459 approach Methods 0.000 description 10
- 238000009825 accumulation Methods 0.000 description 6
- 230000002950 deficient Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- ORCSMBGZHYTXOV-UHFFFAOYSA-N bismuth;germanium;dodecahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.O.O.[Ge].[Ge].[Ge].[Bi].[Bi].[Bi].[Bi] ORCSMBGZHYTXOV-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000003908 quality control method Methods 0.000 description 2
- 238000002601 radiography Methods 0.000 description 2
- BYHQTRFJOGIQAO-GOSISDBHSA-N 3-(4-bromophenyl)-8-[(2R)-2-hydroxypropyl]-1-[(3-methoxyphenyl)methyl]-1,3,8-triazaspiro[4.5]decan-2-one Chemical compound C[C@H](CN1CCC2(CC1)CN(C(=O)N2CC3=CC(=CC=C3)OC)C4=CC=C(C=C4)Br)O BYHQTRFJOGIQAO-GOSISDBHSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000011976 chest X-ray Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical class C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000006335 response to radiation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000009518 sodium iodide Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/184—Infrared image sensors
- H10F39/1843—Infrared image sensors of the hybrid type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Measurement Of Radiation (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
- Photographic Developing Apparatuses (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9726765A GB2332562B (en) | 1997-12-18 | 1997-12-18 | Hybrid semiconductor imaging device |
| PCT/EP1998/007522 WO1999033116A1 (en) | 1997-12-18 | 1998-11-16 | Hybrid semiconductor imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL136704A0 IL136704A0 (en) | 2001-06-14 |
| IL136704A true IL136704A (en) | 2004-07-25 |
Family
ID=10823835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL13670498A IL136704A (en) | 1997-12-18 | 1998-11-16 | Hybrid semiconductor imaging device |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6323475B1 (enExample) |
| EP (1) | EP1042814B1 (enExample) |
| JP (1) | JP4112175B2 (enExample) |
| AT (1) | ATE469439T1 (enExample) |
| AU (1) | AU1874599A (enExample) |
| DE (1) | DE69841688D1 (enExample) |
| GB (1) | GB2332562B (enExample) |
| IL (1) | IL136704A (enExample) |
| WO (1) | WO1999033116A1 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19933471A1 (de) * | 1999-07-20 | 2001-02-01 | Daimler Chrysler Ag | Bildaufnehmer mit integrierter Signalverarbeitung und Bildaufnahmeverfahren |
| US7189971B2 (en) * | 2002-02-15 | 2007-03-13 | Oy Ajat Ltd | Radiation imaging device and system |
| US7170062B2 (en) * | 2002-03-29 | 2007-01-30 | Oy Ajat Ltd. | Conductive adhesive bonded semiconductor substrates for radiation imaging devices |
| US6841784B2 (en) * | 2002-07-02 | 2005-01-11 | Ray Therapy Imaging Ab | Radiation sensor device |
| US6844543B2 (en) * | 2002-07-03 | 2005-01-18 | The Regents Of The University Of California | Quantitation of absorbed or deposited materials on a substrate that measures energy deposition |
| US7223981B1 (en) | 2002-12-04 | 2007-05-29 | Aguila Technologies Inc. | Gamma ray detector modules |
| US7247858B2 (en) * | 2003-04-10 | 2007-07-24 | Agfa Healthcare, N.V. | Method for creating a contiguous image using multiple X-ray imagers |
| DE10357135B4 (de) * | 2003-12-06 | 2007-01-04 | X-Fab Semiconductor Foundries Ag | Fotodetektor mit Transimpendanzverstärker und Auswerteelektronik in monolithischer Integration und Herstellungsverfahren |
| US7217915B2 (en) * | 2004-05-07 | 2007-05-15 | Sun Microsystems, Inc. | Method and apparatus for detecting the position of light which is incident to a semiconductor die |
| GB2441814B (en) | 2006-09-07 | 2012-04-11 | Detection Technology Oy | Photodiode array output signal multiplexing |
| US20110001052A1 (en) * | 2006-12-04 | 2011-01-06 | Luc Struye | Computed radiography system |
| JP2008277511A (ja) * | 2007-04-27 | 2008-11-13 | Fujifilm Corp | 撮像素子及び撮像装置 |
| US8368469B2 (en) * | 2010-03-10 | 2013-02-05 | Purdue Research Foundation | Silicon-on-insulator high power amplifiers |
| WO2011145171A1 (ja) * | 2010-05-18 | 2011-11-24 | キヤノン株式会社 | 撮像システム及びその制御方法 |
| WO2015125443A1 (ja) * | 2014-02-19 | 2015-08-27 | パナソニックＩｐマネジメント株式会社 | 受光デバイスおよびその製造方法 |
| US20150276945A1 (en) * | 2014-03-25 | 2015-10-01 | Oy Ajat Ltd. | Semiconductor bump-bonded x-ray imaging device |
| US10686003B2 (en) * | 2015-12-31 | 2020-06-16 | General Electric Company | Radiation detector assembly |
| WO2018085602A1 (en) | 2016-11-04 | 2018-05-11 | Hologic, Inc. | Medical imaging device and method of operating a medical imaging device |
| SE542767C2 (en) * | 2018-05-15 | 2020-07-07 | Xcounter Ab | Sensor unit and radiation detector |
| RU2730045C2 (ru) * | 2018-09-11 | 2020-08-14 | Объединенный Институт Ядерных Исследований (Оияи) | Гибридный пиксельный детектор ионизирующих излучений |
| EP3690490A1 (en) * | 2019-02-04 | 2020-08-05 | ams International AG | X-ray detector component, x-ray detection module, imaging device and method for manufacturing an x-ray detector component |
| WO2020228935A1 (en) | 2019-05-13 | 2020-11-19 | Direct Conversion Ab | Method of reading out data in a radiation detector, radiation detector and imaging apparatus |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2581251B1 (fr) * | 1985-04-30 | 1987-09-11 | Thomson Csf | Dispositif d'aboutement optique de detecteurs photosensibles |
| EP0415541B1 (en) * | 1989-07-29 | 1994-10-05 | Shimadzu Corporation | Semiconductor-based radiation image detector and its manufacturing method |
| FR2652655A1 (fr) | 1989-10-04 | 1991-04-05 | Commissariat Energie Atomique | Dispositif matriciel de grandes dimensions pour la prise ou la restitution d'images. |
| US5245191A (en) * | 1992-04-14 | 1993-09-14 | The Board Of Regents Of The University Of Arizona | Semiconductor sensor for gamma-ray tomographic imaging system |
| FR2693033B1 (fr) * | 1992-06-30 | 1994-08-19 | Commissariat Energie Atomique | Dispositif d'imagerie de grande dimension. |
| US5336879A (en) | 1993-05-28 | 1994-08-09 | David Sarnoff Research Center, Inc. | Pixel array having image forming pixel elements integral with peripheral circuit elements |
| GB2289983B (en) | 1994-06-01 | 1996-10-16 | Simage Oy | Imaging devices,systems and methods |
| GB2305096B (en) | 1995-08-29 | 1997-09-10 | Simage Oy | Imaging system and method |
-
1997
- 1997-12-18 GB GB9726765A patent/GB2332562B/en not_active Expired - Fee Related
-
1998
- 1998-06-10 US US09/095,152 patent/US6323475B1/en not_active Expired - Lifetime
- 1998-11-16 AU AU18745/99A patent/AU1874599A/en not_active Abandoned
- 1998-11-16 AT AT98963497T patent/ATE469439T1/de not_active IP Right Cessation
- 1998-11-16 WO PCT/EP1998/007522 patent/WO1999033116A1/en not_active Ceased
- 1998-11-16 JP JP2000525930A patent/JP4112175B2/ja not_active Expired - Lifetime
- 1998-11-16 IL IL13670498A patent/IL136704A/en not_active IP Right Cessation
- 1998-11-16 DE DE69841688T patent/DE69841688D1/de not_active Expired - Lifetime
- 1998-11-16 EP EP98963497A patent/EP1042814B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| ATE469439T1 (de) | 2010-06-15 |
| DE69841688D1 (de) | 2010-07-08 |
| JP2001527294A (ja) | 2001-12-25 |
| EP1042814A1 (en) | 2000-10-11 |
| GB9726765D0 (en) | 1998-02-18 |
| JP4112175B2 (ja) | 2008-07-02 |
| AU1874599A (en) | 1999-07-12 |
| EP1042814B1 (en) | 2010-05-26 |
| GB2332562B (en) | 2000-01-12 |
| GB2332562A (en) | 1999-06-23 |
| IL136704A0 (en) | 2001-06-14 |
| US6323475B1 (en) | 2001-11-27 |
| WO1999033116A1 (en) | 1999-07-01 |
| GB2332562A9 (en) |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| EXP | Patent expired |