JP4110601B2 - 炭化珪素単結晶の製造方法 - Google Patents

炭化珪素単結晶の製造方法 Download PDF

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Publication number
JP4110601B2
JP4110601B2 JP00501898A JP501898A JP4110601B2 JP 4110601 B2 JP4110601 B2 JP 4110601B2 JP 00501898 A JP00501898 A JP 00501898A JP 501898 A JP501898 A JP 501898A JP 4110601 B2 JP4110601 B2 JP 4110601B2
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Prior art keywords
single crystal
silicon carbide
crucible
raw material
carbon material
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Expired - Lifetime
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JP00501898A
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Japanese (ja)
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JPH11199395A (ja
JPH11199395A5 (enExample
Inventor
邦雄 小巻
勇 山本
直樹 小柳
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Resonac Holdings Corp
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Showa Denko KK
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Priority to JP00501898A priority Critical patent/JP4110601B2/ja
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JP00501898A 1998-01-13 1998-01-13 炭化珪素単結晶の製造方法 Expired - Lifetime JP4110601B2 (ja)

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JP00501898A JP4110601B2 (ja) 1998-01-13 1998-01-13 炭化珪素単結晶の製造方法

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JP00501898A JP4110601B2 (ja) 1998-01-13 1998-01-13 炭化珪素単結晶の製造方法

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JPH11199395A JPH11199395A (ja) 1999-07-27
JPH11199395A5 JPH11199395A5 (enExample) 2005-08-04
JP4110601B2 true JP4110601B2 (ja) 2008-07-02

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JP00501898A Expired - Lifetime JP4110601B2 (ja) 1998-01-13 1998-01-13 炭化珪素単結晶の製造方法

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4593099B2 (ja) * 2003-03-10 2010-12-08 学校法人関西学院 単結晶炭化ケイ素の液相エピタキシャル成長法及びそれに用いられる熱処理装置
JP2006001786A (ja) * 2004-06-17 2006-01-05 Hitachi Chem Co Ltd フッ化カルシウム結晶育成ルツボ、フッ化カルシウム結晶の製造方法及びフッ化カルシウム結晶
JP4941099B2 (ja) * 2007-05-24 2012-05-30 株式会社デンソー 炭化珪素単結晶の製造装置
KR100848810B1 (ko) 2007-08-03 2008-07-28 한국전기연구원 단결정 성장 방법 및 그 장치
JP5087489B2 (ja) * 2008-07-23 2012-12-05 株式会社ブリヂストン 炭化珪素単結晶の製造装置及び炭化珪素単結晶の製造方法
JP5327259B2 (ja) * 2011-03-30 2013-10-30 株式会社デンソー 炭化珪素単結晶の製造装置
JP5548174B2 (ja) * 2011-09-12 2014-07-16 東洋炭素株式会社 ＰＩＴ炭素芯ＴａＣチューブの製造方法、及び、ＰＩＴ炭素芯ＴａＣチューブ
KR101882321B1 (ko) * 2011-12-26 2018-07-27 엘지이노텍 주식회사 잉곳 제조 장치
CN105734671B (zh) * 2014-12-10 2018-11-30 北京天科合达半导体股份有限公司 一种高质量碳化硅晶体生长的方法
CN110129880A (zh) * 2019-04-26 2019-08-16 河北同光晶体有限公司 一种低碳包裹物密度SiC单晶的生长装置及生长方法
RU2745736C1 (ru) * 2020-03-26 2021-03-31 Акционерное общество "ОКБ-Планета" АО "ОКБ-Планета" Способ модификации поверхности кристаллов карбида кремния
CN113005513B (zh) * 2021-04-19 2024-08-06 北京昌龙智芯半导体有限公司 一种碳化硅蒸汽制备装置
CN113584592A (zh) * 2021-08-02 2021-11-02 哈尔滨科友半导体产业装备与技术研究院有限公司 一种减少石墨包裹物的碳化硅晶体生长方法
CN114574946B (zh) * 2022-02-23 2024-06-14 中国电子科技集团公司第四十六研究所 一种重掺锑硅单晶中锑元素掺杂的方法及掺杂装置

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