JP4091540B2 - 表面から汚染物質を除去する方法およびそのために有用な組成物 - Google Patents
表面から汚染物質を除去する方法およびそのために有用な組成物 Download PDFInfo
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- JP4091540B2 JP4091540B2 JP2003509052A JP2003509052A JP4091540B2 JP 4091540 B2 JP4091540 B2 JP 4091540B2 JP 2003509052 A JP2003509052 A JP 2003509052A JP 2003509052 A JP2003509052 A JP 2003509052A JP 4091540 B2 JP4091540 B2 JP 4091540B2
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- copper
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- 239000000203 mixture Substances 0.000 title claims description 77
- 238000000034 method Methods 0.000 title claims description 31
- 239000000356 contaminant Substances 0.000 title claims description 15
- 239000010949 copper Substances 0.000 claims description 55
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 49
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 48
- 229910052802 copper Inorganic materials 0.000 claims description 42
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 27
- 238000005498 polishing Methods 0.000 claims description 17
- 235000006408 oxalic acid Nutrition 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 150000003839 salts Chemical class 0.000 claims description 14
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 11
- 230000003115 biocidal effect Effects 0.000 claims description 10
- 239000003139 biocide Substances 0.000 claims description 10
- 235000015165 citric acid Nutrition 0.000 claims description 10
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 9
- 239000004471 Glycine Substances 0.000 claims description 7
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 6
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 6
- 125000003277 amino group Chemical group 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 230000002411 adverse Effects 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000001361 adipic acid Substances 0.000 claims description 3
- 235000011037 adipic acid Nutrition 0.000 claims description 3
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 3
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 239000001530 fumaric acid Substances 0.000 claims description 3
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 3
- 239000011976 maleic acid Substances 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- 239000010419 fine particle Substances 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 67
- 239000002002 slurry Substances 0.000 description 37
- 238000004140 cleaning Methods 0.000 description 34
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 26
- 239000010408 film Substances 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 238000002474 experimental method Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 239000012141 concentrate Substances 0.000 description 8
- 238000001514 detection method Methods 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 229910052742 iron Inorganic materials 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000004876 x-ray fluorescence Methods 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 239000005751 Copper oxide Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- -1 alkali metal salts Chemical class 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 229910000431 copper oxide Inorganic materials 0.000 description 4
- 229960004643 cupric oxide Drugs 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000012459 cleaning agent Substances 0.000 description 3
- 238000000921 elemental analysis Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000003113 dilution method Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 2
- 238000002356 laser light scattering Methods 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- JPMIIZHYYWMHDT-UHFFFAOYSA-N octhilinone Chemical compound CCCCCCCCN1SC=CC1=O JPMIIZHYYWMHDT-UHFFFAOYSA-N 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229940100555 2-methyl-4-isothiazolin-3-one Drugs 0.000 description 1
- 229940100484 5-chloro-2-methyl-4-isothiazolin-3-one Drugs 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 238000013313 FeNO test Methods 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 238000010936 aqueous wash Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- DHNRXBZYEKSXIM-UHFFFAOYSA-N chloromethylisothiazolinone Chemical compound CN1SC(Cl)=CC1=O DHNRXBZYEKSXIM-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- SXTLQDJHRPXDSB-UHFFFAOYSA-N copper;dinitrate;trihydrate Chemical compound O.O.O.[Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O SXTLQDJHRPXDSB-UHFFFAOYSA-N 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000003630 glycyl group Chemical group [H]N([H])C([H])([H])C(*)=O 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 159000000014 iron salts Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- BEGLCMHJXHIJLR-UHFFFAOYSA-N methylisothiazolinone Chemical compound CN1SC=CC1=O BEGLCMHJXHIJLR-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007613 slurry method Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/10—Other heavy metals
- C23G1/103—Other heavy metals copper or alloys of copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/038—Post-treatment of the bonding area
- H01L2224/0381—Cleaning, e.g. oxide removal step, desmearing
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Description
1.2%の5-クロロ-2-メチル-4-イソチアゾリン-3-オン
0.4%の2-メチル-4-イソチアゾリン-3-オン
1.1%のMgCl2
1.75%のMg(NO3)2
0.16%の硝酸銅三水和物
95.85%の水、が含まれている。
a)前駆物質オルトケイ酸テトラエチル(TEOS)を使用したプラズマ化学蒸着(PECVD)によって形成された酸化物をもつ、酸化処理シリコン基板
b)熱酸化処理シリコン基板(TOX)
c)TEOS酸化物の薄膜で覆い、その上に物理蒸着(PVD)によって250Åのタンタル、続いて1kÅのPVD Cuを蒸着させたシリコン基板
d)TEOS中のエッチングトレンチから構成され、続いて物理蒸着(PVD)によって250Åのタンタル、続いて1kÅのPVD Cuを蒸着し、次いで10kÅのCuを電気メッキした、パターン化済ウェーハ膜
a)各種ウェーハのスラリー処理は行わず、後の洗浄のみを行う。
b)各種ウェーハをCMPスラリーにディップするだけにして、続いて洗浄する。
c)各種ウェーハを生産用CMP装置で研磨し、続いて洗浄する。
a)両面ブラシスクラバーを使用する洗浄
b)メガソニックバス浸漬法を使用する洗浄
a)光散乱測定装置を使用する粒子挙動
b)透過型蛍光X線(TXRF)装置を使用する元素分析
c)誘導結合プラズマ質量分光法(ICP-MS)と組み合わせた、溶解した表面二酸化ケイ素のドロップスキャンエッチング(DSE)を使用する元素分析
d)それぞれ、4点プローブによるシート抵抗を介した銅および二酸化ケイ素に対する静的エッチング速度および偏光解析法による酸化物厚さ
e)それぞれ、4点プローブによるシート抵抗を介した銅および二酸化ケイ素に対する動的エッチング速度および偏光解析法による酸化物厚さ
f)原子間力顕微鏡法(AFM)による銅および二酸化物の表面粗さ
Claims (34)
- 重量で 0.005%〜 16%の少なくとも1種のジカルボン酸、その塩またはその混合物と、重量で 0.003%〜 4%の少なくとも1種のヒドロキシカルボン酸、その塩またはその混合物とからなり、その残りが実質的に水であり、pHが 1から 4である、銅表面に悪影響を与えることなく CMP 平坦化後の銅表面から微粒子汚染物質を除去するための、フッ化物を含まない水性組成物。
- 前記ジカルボン酸またはその塩が、2から6個の炭素原子を有する、請求項1に記載の組成物。
- 前記ジカルボン酸が、シュウ酸、マロン酸、コハク酸、グルタル酸、アジピン酸、マレイン酸、およびフマル酸からなる群から選択される、請求項1に記載の組成物。
- 前記ジカルボン酸が、マロン酸およびシュウ酸の混合物を含む、請求項1に記載の組成物。
- 前記マロン酸の量が重量で 0.003%〜 8%であり、かつ、前記シュウ酸の量が重量で 0.003%〜 8%である、請求項4に記載の組成物。
- 前記ヒドロキシカルボン酸が、リンゴ酸、酒石酸、およびクエン酸からなる群から選択される、請求項1に記載の組成物。
- クエン酸またはクエン酸アンモニウムを含む、請求項1に記載の組成物。
- クエン酸を含む、請求項1に記載の組成物。
- クエン酸アンモニウムを含む、請求項1に記載の組成物。
- 重量で 0.003%〜 8%のマロン酸、重量で 0.003%〜 8%のシュウ酸、重量で 0.003%〜 4%のクエン酸を含有し、その残りが実質的に水であり、pHが 1から 4である、フッ化物を含まない水性組成物。
- 重量で 0.2%のクエン酸、重量で 0.1%のマロン酸、および重量で 0.2%のシュウ酸を含む、請求項10に記載の組成物。
- さらに、殺生物剤を含む、請求項10に記載の組成物。
- 前記殺生物剤の量が、重量で最大 0.002%である、請求項12に記載の組成物。
- 前記殺生物剤の量が、重量で 0.00005%である、請求項12に記載の組成物。
- 前記pHが最大で 2である、請求項10に記載の組成物。
- 重量で 0.005%〜 16%の少なくとも1種のジカルボン酸、その塩またはその混合物と、重量で 0.003%〜 4%の少なくとも1種のアミン基含有酸、その塩またはその混合物とを含有し、その残りが実質的に水であり、pHが 1から 4である、フッ化物を含まない水性組成物。
- 前記ジカルボン酸またはその塩が、2から6個の炭素原子を有する、請求項16に記載の組成物。
- 前記ジカルボン酸が、シュウ酸、マロン酸、コハク酸、グルタル酸、アジピン酸、マレイン酸、フマル酸からなる群から選択される、請求項16に記載の組成物。
- 前記ジカルボン酸が、マロン酸およびシュウ酸の混合物を含む、請求項16に記載の組成物。
- 前記少なくとも1種のアミン基含有酸がグリシンである、請求項16に記載の組成物。
- 重量で 0.003%〜 8%のマロン酸、重量で 0.003%〜 8%のシュウ酸、重量で 0.003%〜 4%のグリシンを含み、その残りが実質的に水であり、pHが 1から 4である、フッ化物を含まない水性組成物。
- 重量で 0.25%のグリシン、重量で 0.1%のマロン酸、および重量で 5%のシュウ酸を含む、請求項21に記載の組成物。
- さらに、殺生物剤を含有する、請求項21に記載の組成物。
- 前記殺生物剤の量が、重量で最大 0.002%である、請求項23に記載の組成物。
- 前記殺生物剤の量が、重量で 0.00005%である、請求項23に記載の組成物。
- 前記pHが最大で 2である、請求項21に記載の組成物。
- CMP平坦化後に、CMPによって平坦化された銅表面を請求項1に記載の水性組成物と接触させることを含む、銅表面から微粒子汚染物質を除去する方法。
- CMP平坦化後に、CMPによって平坦化された銅表面を請求項16に記載の水性組成物と接触させることを含む、銅表面から微粒子汚染物質を除去する方法。
- フォトリソグラフィー法によって半導体ウェーハの表面に銅または銅合金を含む回路を形成すること、化学機械研磨によって表面を平坦化すること、および請求項1に記載の水性組成物と接触させて前記表面から微粒子汚染物質を除去することを含む、半導体集積回路の作製方法。
- 前記銅または銅合金が、誘電材料中に埋め込まれ、その誘電材料と銅または銅合金の間に障壁層が存在する、請求項29に記載の方法。
- 前記誘電体が二酸化ケイ素であり、かつ、障壁層がタンタル、チタン、およびその窒化物からなる群から選択される少なくとも1種の材料である、請求項30に記載の方法。
- フォトリソグラフィー法によって半導体ウェーハの表面に銅または銅合金を含む回路を形成すること、化学機械研磨によって表面を平坦化すること、および請求項16に記載の水性組成物と接触させて前記表面から微粒子汚染物質を除去することを含む、半導体集積回路の作製方法。
- 前記銅または銅合金が、誘電材料中に埋め込まれ、その誘電材料と銅または銅合金の間に障壁層が存在する、請求項32に記載の方法。
- 前記誘電体が二酸化ケイ素であり、かつ、障壁層がタンタル、チタン、およびその窒化物からなる群から選択される少なくとも1種の材料である、請求項33に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/893,968 US6627546B2 (en) | 2001-06-29 | 2001-06-29 | Process for removing contaminant from a surface and composition useful therefor |
PCT/US2002/019034 WO2003002688A1 (en) | 2001-06-29 | 2002-06-17 | Process for removing contaminant from a surface and composition useful therefor |
Publications (2)
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JP2004531637A JP2004531637A (ja) | 2004-10-14 |
JP4091540B2 true JP4091540B2 (ja) | 2008-05-28 |
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JP2003509052A Expired - Lifetime JP4091540B2 (ja) | 2001-06-29 | 2002-06-17 | 表面から汚染物質を除去する方法およびそのために有用な組成物 |
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US (3) | US6627546B2 (ja) |
EP (1) | EP1412453B1 (ja) |
JP (1) | JP4091540B2 (ja) |
KR (2) | KR100804353B1 (ja) |
CN (1) | CN1264949C (ja) |
IL (3) | IL159596A0 (ja) |
MY (1) | MY149922A (ja) |
TW (1) | TWI227267B (ja) |
WO (1) | WO2003002688A1 (ja) |
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JP4945857B2 (ja) * | 2001-06-13 | 2012-06-06 | Jsr株式会社 | 研磨パッド洗浄用組成物及び研磨パッド洗浄方法 |
US6627546B2 (en) * | 2001-06-29 | 2003-09-30 | Ashland Inc. | Process for removing contaminant from a surface and composition useful therefor |
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2001
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- 2002-06-17 CN CNB028130111A patent/CN1264949C/zh not_active Expired - Lifetime
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US7524801B2 (en) | 2009-04-28 |
EP1412453A4 (en) | 2007-12-12 |
EP1412453A1 (en) | 2004-04-28 |
MY149922A (en) | 2013-10-31 |
JP2004531637A (ja) | 2004-10-14 |
CN1522292A (zh) | 2004-08-18 |
US20040035354A1 (en) | 2004-02-26 |
CN1264949C (zh) | 2006-07-19 |
KR100608183B1 (ko) | 2006-08-04 |
WO2003002688A1 (en) | 2003-01-09 |
IL159596A0 (en) | 2004-06-01 |
US20030096500A1 (en) | 2003-05-22 |
US20080167209A1 (en) | 2008-07-10 |
IL159596A (en) | 2008-07-08 |
KR100804353B1 (ko) | 2008-02-15 |
KR20060058785A (ko) | 2006-05-30 |
KR20040028797A (ko) | 2004-04-03 |
US7700534B2 (en) | 2010-04-20 |
EP1412453B1 (en) | 2016-06-08 |
US6627546B2 (en) | 2003-09-30 |
TWI227267B (en) | 2005-02-01 |
IL181553A0 (en) | 2007-07-04 |
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