KR20060058785A - 표면의 오염 물질 제거 방법 및 이에 유용한 조성물 - Google Patents
표면의 오염 물질 제거 방법 및 이에 유용한 조성물 Download PDFInfo
- Publication number
- KR20060058785A KR20060058785A KR1020067009275A KR20067009275A KR20060058785A KR 20060058785 A KR20060058785 A KR 20060058785A KR 1020067009275 A KR1020067009275 A KR 1020067009275A KR 20067009275 A KR20067009275 A KR 20067009275A KR 20060058785 A KR20060058785 A KR 20060058785A
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- South Korea
- Prior art keywords
- acid
- weight percent
- composition
- dicarboxylic
- malonic
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims description 59
- 239000000356 contaminant Substances 0.000 title claims description 17
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims abstract description 93
- 239000010949 copper Substances 0.000 claims abstract description 51
- 229910052802 copper Inorganic materials 0.000 claims abstract description 39
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 36
- 150000003839 salts Chemical class 0.000 claims abstract description 29
- 239000002253 acid Substances 0.000 claims abstract description 12
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 125000003277 amino group Chemical group 0.000 claims abstract description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 96
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 235000006408 oxalic acid Nutrition 0.000 claims description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 28
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 23
- 235000015165 citric acid Nutrition 0.000 claims description 18
- 238000005498 polishing Methods 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 14
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 14
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 150000001991 dicarboxylic acids Chemical class 0.000 claims description 11
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 10
- 239000004471 Glycine Substances 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 7
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 7
- 150000007513 acids Chemical class 0.000 claims description 7
- 239000001361 adipic acid Substances 0.000 claims description 7
- 235000011037 adipic acid Nutrition 0.000 claims description 7
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 7
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- 239000001530 fumaric acid Substances 0.000 claims description 7
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 7
- 239000011976 maleic acid Substances 0.000 claims description 7
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 4
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 4
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 4
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 4
- 239000001630 malic acid Substances 0.000 claims description 4
- 235000011090 malic acid Nutrition 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 235000002906 tartaric acid Nutrition 0.000 claims description 4
- 239000011975 tartaric acid Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 239000004615 ingredient Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910021645 metal ion Inorganic materials 0.000 abstract description 5
- 238000011109 contamination Methods 0.000 abstract description 3
- 230000009977 dual effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 67
- 238000004140 cleaning Methods 0.000 description 39
- 239000002002 slurry Substances 0.000 description 39
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 26
- 239000010408 film Substances 0.000 description 21
- 239000002245 particle Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 239000012141 concentrate Substances 0.000 description 8
- 238000001514 detection method Methods 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 229910052742 iron Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000007800 oxidant agent Substances 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 239000005751 Copper oxide Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000004630 atomic force microscopy Methods 0.000 description 5
- 239000003139 biocide Substances 0.000 description 5
- 229910000431 copper oxide Inorganic materials 0.000 description 5
- 229960004643 cupric oxide Drugs 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000004876 x-ray fluorescence Methods 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 230000003115 biocidal effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 238000000921 elemental analysis Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- -1 FeNO 3 or KIO 3 Chemical class 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 239000013618 particulate matter Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229940100555 2-methyl-4-isothiazolin-3-one Drugs 0.000 description 1
- 241000252147 Atractosteus spatula Species 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 238000013313 FeNO test Methods 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- MMCOUVMKNAHQOY-UHFFFAOYSA-N carbonoperoxoic acid Chemical compound OOC(O)=O MMCOUVMKNAHQOY-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- SXTLQDJHRPXDSB-UHFFFAOYSA-N copper;dinitrate;trihydrate Chemical compound O.O.O.[Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O SXTLQDJHRPXDSB-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 238000002356 laser light scattering Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- BEGLCMHJXHIJLR-UHFFFAOYSA-N methylisothiazolinone Chemical compound CN1SC=CC1=O BEGLCMHJXHIJLR-UHFFFAOYSA-N 0.000 description 1
- 239000006199 nebulizer Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- JPMIIZHYYWMHDT-UHFFFAOYSA-N octhilinone Chemical compound CCCCCCCCN1SC=CC1=O JPMIIZHYYWMHDT-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/10—Other heavy metals
- C23G1/103—Other heavy metals copper or alloys of copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C11D2111/22—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/038—Post-treatment of the bonding area
- H01L2224/0381—Cleaning, e.g. oxide removal step, desmearing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Detergent Compositions (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
Claims (58)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
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US09/893,968 US6627546B2 (en) | 2001-06-29 | 2001-06-29 | Process for removing contaminant from a surface and composition useful therefor |
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KR20037017071A KR100608183B1 (ko) | 2001-06-29 | 2002-06-17 | 표면의 오염 물질 제거 방법 및 이에 유용한 조성물 |
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US (3) | US6627546B2 (ko) |
EP (1) | EP1412453B1 (ko) |
JP (1) | JP4091540B2 (ko) |
KR (2) | KR100804353B1 (ko) |
CN (1) | CN1264949C (ko) |
IL (3) | IL159596A0 (ko) |
MY (1) | MY149922A (ko) |
TW (1) | TWI227267B (ko) |
WO (1) | WO2003002688A1 (ko) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6627546B2 (en) * | 2001-06-29 | 2003-09-30 | Ashland Inc. | Process for removing contaminant from a surface and composition useful therefor |
WO2003091377A1 (en) * | 2002-04-25 | 2003-11-06 | Arch Speciality Chemicals, Inc. | Non-corrosive cleaning compositions for removing etch residues |
AU2002327300A1 (en) * | 2002-08-19 | 2004-03-03 | Merk-Kanto Advanced Chemical Ltd. | Remover solution |
KR20050022292A (ko) * | 2003-08-27 | 2005-03-07 | 마츠시타 덴끼 산교 가부시키가이샤 | 반도체장치의 제조방법 |
WO2005071138A1 (ja) * | 2004-01-23 | 2005-08-04 | Ebara Corporation | 基板処理方法及び触媒処理液及び基板処理装置 |
KR100626382B1 (ko) * | 2004-08-03 | 2006-09-20 | 삼성전자주식회사 | 식각 용액 및 이를 이용한 자기 기억 소자의 형성 방법 |
US7611588B2 (en) * | 2004-11-30 | 2009-11-03 | Ecolab Inc. | Methods and compositions for removing metal oxides |
US7867779B2 (en) | 2005-02-03 | 2011-01-11 | Air Products And Chemicals, Inc. | System and method comprising same for measurement and/or analysis of particles in gas stream |
US7888302B2 (en) * | 2005-02-03 | 2011-02-15 | Air Products And Chemicals, Inc. | Aqueous based residue removers comprising fluoride |
US7682458B2 (en) * | 2005-02-03 | 2010-03-23 | Air Products And Chemicals, Inc. | Aqueous based residue removers comprising fluoride |
US20060183055A1 (en) * | 2005-02-15 | 2006-08-17 | O'neill Mark L | Method for defining a feature on a substrate |
US20060270234A1 (en) * | 2005-05-27 | 2006-11-30 | Varughese Mathew | Method and composition for preparing a semiconductor surface for deposition of a barrier material |
US7947637B2 (en) * | 2006-06-30 | 2011-05-24 | Fujifilm Electronic Materials, U.S.A., Inc. | Cleaning formulation for removing residues on surfaces |
US8685909B2 (en) | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
KR101644763B1 (ko) * | 2007-05-17 | 2016-08-01 | 엔테그리스, 아이엔씨. | Cmp후 세정 제제용 신규한 항산화제 |
US8987039B2 (en) | 2007-10-12 | 2015-03-24 | Air Products And Chemicals, Inc. | Antireflective coatings for photovoltaic applications |
US20090096106A1 (en) * | 2007-10-12 | 2009-04-16 | Air Products And Chemicals, Inc. | Antireflective coatings |
JP5561914B2 (ja) * | 2008-05-16 | 2014-07-30 | 関東化学株式会社 | 半導体基板洗浄液組成物 |
US20090291873A1 (en) * | 2008-05-22 | 2009-11-26 | Air Products And Chemicals, Inc. | Method and Composition for Post-CMP Cleaning of Copper Interconnects Comprising Noble Metal Barrier Layers |
US8580656B2 (en) * | 2008-07-14 | 2013-11-12 | Air Products And Chemicals, Inc. | Process for inhibiting corrosion and removing contaminant from a surface during wafer dicing and composition useful therefor |
KR101752684B1 (ko) | 2008-10-21 | 2017-07-04 | 엔테그리스, 아이엔씨. | 구리 세척 및 보호 조성물 |
US7763577B1 (en) * | 2009-02-27 | 2010-07-27 | Uwiz Technology Co., Ltd. | Acidic post-CMP cleaning composition |
US8815110B2 (en) * | 2009-09-16 | 2014-08-26 | Cabot Microelectronics Corporation | Composition and method for polishing bulk silicon |
US8101561B2 (en) | 2009-11-17 | 2012-01-24 | Wai Mun Lee | Composition and method for treating semiconductor substrate surface |
PL2504469T3 (pl) * | 2009-11-23 | 2018-12-31 | Metcon, Llc | Sposoby polerowania elektrolitycznego |
US8883701B2 (en) | 2010-07-09 | 2014-11-11 | Air Products And Chemicals, Inc. | Method for wafer dicing and composition useful thereof |
US8580103B2 (en) | 2010-11-22 | 2013-11-12 | Metcon, Llc | Electrolyte solution and electrochemical surface modification methods |
CN102011128B (zh) * | 2010-12-30 | 2012-07-04 | 上海大学 | 计算机硬盘基片抛光后用的清洗剂组合物 |
WO2012148967A2 (en) | 2011-04-25 | 2012-11-01 | Air Products And Chemicals, Inc. | Cleaning lead-frames to improve wirebonding process |
CN106041739B (zh) * | 2016-05-27 | 2018-02-23 | 华侨大学 | 一种超硬磨料磨具的微生物修整方法 |
JP6864530B2 (ja) * | 2017-04-13 | 2021-04-28 | Eneos株式会社 | 洗浄剤組成物 |
CN109679787B (zh) * | 2019-01-22 | 2020-11-10 | 上海毅诺生物科技有限公司 | 一种酸性水基清洗剂及其制备方法 |
TW202138505A (zh) * | 2020-03-31 | 2021-10-16 | 美商富士軟片電子材料美國股份有限公司 | 研磨組成物及其使用方法 |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3166444A (en) * | 1962-04-26 | 1965-01-19 | Lubrizol Corp | Method for cleaning metal articles |
US3627687A (en) * | 1968-02-09 | 1971-12-14 | Dow Chemical Co | Cleaning of ferrous metal surfaces |
US3637508A (en) * | 1970-03-06 | 1972-01-25 | William B Willsey | Process and composition for dissolving copper oxide |
SU478795A1 (ru) * | 1972-09-27 | 1975-07-30 | Предприятие П/Я Р-6324 | Травильный раствор |
US3993575A (en) * | 1975-05-27 | 1976-11-23 | Fine Organics Inc. | Hard surface acid cleaner and brightener |
JPS59164398A (ja) | 1983-03-08 | 1984-09-17 | 栗田工業株式会社 | 水槽の洗浄剤 |
JPH02225684A (ja) * | 1989-02-27 | 1990-09-07 | C Uyemura & Co Ltd | 銅又は銅合金のスマット除去剤及び除去方法 |
US6546939B1 (en) * | 1990-11-05 | 2003-04-15 | Ekc Technology, Inc. | Post clean treatment |
JPH06248480A (ja) | 1993-02-24 | 1994-09-06 | Lion Corp | ステンレス用水系伸線剤の洗浄剤組成物および洗浄方法 |
JP2586304B2 (ja) * | 1993-09-21 | 1997-02-26 | 日本電気株式会社 | 半導体基板の洗浄液および洗浄方法 |
ES2156147T3 (es) | 1994-02-03 | 2001-06-16 | Procter & Gamble | Composiciones para eliminar incrustaciones de cal. |
DE69422014T2 (de) | 1994-02-03 | 2000-07-20 | Procter & Gamble | Saure Reinigungszusammensetzungen |
JP3397501B2 (ja) * | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
FR2722511B1 (fr) | 1994-07-15 | 1999-04-02 | Ontrak Systems Inc | Procede pour enlever les metaux dans un dispositif de recurage |
US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
GB9425030D0 (en) * | 1994-12-09 | 1995-02-08 | Alpha Metals Ltd | Silver plating |
US5662769A (en) | 1995-02-21 | 1997-09-02 | Advanced Micro Devices, Inc. | Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning |
JP2923524B2 (ja) * | 1995-08-01 | 1999-07-26 | メック株式会社 | 銅および銅合金のマイクロエッチング剤並びにマイクロエッチング方法 |
US5693239A (en) | 1995-10-10 | 1997-12-02 | Rodel, Inc. | Polishing slurries comprising two abrasive components and methods for their use |
JP3458036B2 (ja) * | 1996-03-05 | 2003-10-20 | メック株式会社 | 銅および銅合金のマイクロエッチング剤 |
US5858813A (en) | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
TW416987B (en) | 1996-06-05 | 2001-01-01 | Wako Pure Chem Ind Ltd | A composition for cleaning the semiconductor substrate surface |
US6265781B1 (en) * | 1996-10-19 | 2001-07-24 | Micron Technology, Inc. | Methods and solutions for cleaning polished aluminum-containing layers, methods for making metallization structures, and the structures resulting from these methods |
US6310300B1 (en) * | 1996-11-08 | 2001-10-30 | International Business Machines Corporation | Fluorine-free barrier layer between conductor and insulator for degradation prevention |
US5954997A (en) * | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US5824601A (en) * | 1997-06-30 | 1998-10-20 | Motorola, Inc. | Carboxylic acid etching solution and method |
TW387936B (en) * | 1997-08-12 | 2000-04-21 | Kanto Kagaku | Washing solution |
US6033993A (en) * | 1997-09-23 | 2000-03-07 | Olin Microelectronic Chemicals, Inc. | Process for removing residues from a semiconductor substrate |
US6303551B1 (en) * | 1997-10-21 | 2001-10-16 | Lam Research Corporation | Cleaning solution and method for cleaning semiconductor substrates after polishing of cooper film |
US6174561B1 (en) * | 1998-01-30 | 2001-01-16 | James M. Taylor | Composition and method for priming substrate materials |
US6432828B2 (en) * | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US6063306A (en) * | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
US6217416B1 (en) * | 1998-06-26 | 2001-04-17 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrates |
CA2342332A1 (en) * | 1998-08-31 | 2000-03-09 | Hiroki Terazaki | Abrasive liquid for metal and method for polishing |
JP3003684B1 (ja) * | 1998-09-07 | 2000-01-31 | 日本電気株式会社 | 基板洗浄方法および基板洗浄液 |
US6140239A (en) * | 1998-11-25 | 2000-10-31 | Advanced Micro Devices, Inc. | Chemically removable Cu CMP slurry abrasive |
US6248704B1 (en) * | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
US6673757B1 (en) * | 2000-03-22 | 2004-01-06 | Ashland Inc. | Process for removing contaminant from a surface and composition useful therefor |
WO2000072363A1 (en) | 1999-05-26 | 2000-11-30 | Ashland Inc. | Process for removing contaminant from a surface and composition useful therefor |
US6147002A (en) * | 1999-05-26 | 2000-11-14 | Ashland Inc. | Process for removing contaminant from a surface and composition useful therefor |
US6395693B1 (en) | 1999-09-27 | 2002-05-28 | Cabot Microelectronics Corporation | Cleaning solution for semiconductor surfaces following chemical-mechanical polishing |
US6413923B2 (en) * | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US6592433B2 (en) * | 1999-12-31 | 2003-07-15 | Intel Corporation | Method for defect reduction |
TWI296006B (ko) * | 2000-02-09 | 2008-04-21 | Jsr Corp | |
US6936541B2 (en) * | 2000-09-20 | 2005-08-30 | Rohn And Haas Electronic Materials Cmp Holdings, Inc. | Method for planarizing metal interconnects |
US6455432B1 (en) * | 2000-12-05 | 2002-09-24 | United Microelectronics Corp. | Method for removing carbon-rich particles adhered on a copper surface |
JP4945857B2 (ja) * | 2001-06-13 | 2012-06-06 | Jsr株式会社 | 研磨パッド洗浄用組成物及び研磨パッド洗浄方法 |
US6627546B2 (en) * | 2001-06-29 | 2003-09-30 | Ashland Inc. | Process for removing contaminant from a surface and composition useful therefor |
-
2001
- 2001-06-29 US US09/893,968 patent/US6627546B2/en not_active Expired - Lifetime
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2002
- 2002-06-17 EP EP02742116.3A patent/EP1412453B1/en not_active Expired - Lifetime
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- 2002-06-17 WO PCT/US2002/019034 patent/WO2003002688A1/en active Application Filing
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- 2002-06-17 JP JP2003509052A patent/JP4091540B2/ja not_active Expired - Lifetime
- 2002-06-17 KR KR20037017071A patent/KR100608183B1/ko active IP Right Grant
- 2002-06-17 IL IL15959602A patent/IL159596A0/xx unknown
- 2002-06-25 MY MYPI20022366 patent/MY149922A/en unknown
- 2002-06-28 TW TW91114245A patent/TWI227267B/zh not_active IP Right Cessation
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WO2003002688A1 (en) | 2003-01-09 |
US7524801B2 (en) | 2009-04-28 |
US7700534B2 (en) | 2010-04-20 |
JP2004531637A (ja) | 2004-10-14 |
US20030096500A1 (en) | 2003-05-22 |
CN1522292A (zh) | 2004-08-18 |
US20040035354A1 (en) | 2004-02-26 |
TWI227267B (en) | 2005-02-01 |
EP1412453B1 (en) | 2016-06-08 |
IL159596A (en) | 2008-07-08 |
US20080167209A1 (en) | 2008-07-10 |
KR20040028797A (ko) | 2004-04-03 |
KR100608183B1 (ko) | 2006-08-04 |
EP1412453A1 (en) | 2004-04-28 |
CN1264949C (zh) | 2006-07-19 |
US6627546B2 (en) | 2003-09-30 |
IL181553A0 (en) | 2007-07-04 |
EP1412453A4 (en) | 2007-12-12 |
IL159596A0 (en) | 2004-06-01 |
KR100804353B1 (ko) | 2008-02-15 |
MY149922A (en) | 2013-10-31 |
JP4091540B2 (ja) | 2008-05-28 |
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