JP4085423B2 - 光導波路デバイスの製造方法 - Google Patents

光導波路デバイスの製造方法 Download PDF

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Publication number
JP4085423B2
JP4085423B2 JP2002271300A JP2002271300A JP4085423B2 JP 4085423 B2 JP4085423 B2 JP 4085423B2 JP 2002271300 A JP2002271300 A JP 2002271300A JP 2002271300 A JP2002271300 A JP 2002271300A JP 4085423 B2 JP4085423 B2 JP 4085423B2
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JP
Japan
Prior art keywords
optical waveguide
electrode
silicon oxide
oxide film
hydrofluoric acid
Prior art date
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Expired - Fee Related
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JP2002271300A
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English (en)
Japanese (ja)
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JP2004109425A (ja
JP2004109425A5 (https=
Inventor
敏裕 黒田
広明 菊池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
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Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd, Resonac Corp filed Critical Hitachi Chemical Co Ltd
Priority to JP2002271300A priority Critical patent/JP4085423B2/ja
Publication of JP2004109425A publication Critical patent/JP2004109425A/ja
Publication of JP2004109425A5 publication Critical patent/JP2004109425A5/ja
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Publication of JP4085423B2 publication Critical patent/JP4085423B2/ja
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JP2002271300A 2002-09-18 2002-09-18 光導波路デバイスの製造方法 Expired - Fee Related JP4085423B2 (ja)

Priority Applications (1)

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JP2002271300A JP4085423B2 (ja) 2002-09-18 2002-09-18 光導波路デバイスの製造方法

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JP2002271300A JP4085423B2 (ja) 2002-09-18 2002-09-18 光導波路デバイスの製造方法

Publications (3)

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JP2004109425A JP2004109425A (ja) 2004-04-08
JP2004109425A5 JP2004109425A5 (https=) 2005-11-04
JP4085423B2 true JP4085423B2 (ja) 2008-05-14

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JP2002271300A Expired - Fee Related JP4085423B2 (ja) 2002-09-18 2002-09-18 光導波路デバイスの製造方法

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JP (1) JP4085423B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4559818B2 (ja) * 2004-04-30 2010-10-13 アルプス電気株式会社 シリコン基板の無電解めっき方法およびシリコン基板上の金属層形成方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5984437A (ja) * 1982-11-04 1984-05-16 Fujitsu Ltd 半導体装置の製造方法
JPS62206521A (ja) * 1986-03-07 1987-09-11 Nec Corp 導波型光信号処理デバイス
JPH0748485B2 (ja) * 1987-02-23 1995-05-24 日本電装株式会社 エツチング方法
EP0658784A3 (de) * 1991-02-08 1995-08-23 Siemens Ag Optoelektronisches Bauelement zum Ein- und Auskoppeln von Strahlung.
WO1994010592A1 (fr) * 1992-10-28 1994-05-11 Fujitsu Limited Procede pour la production de dispositifs a guide d'ondes
JPH09326435A (ja) * 1996-06-06 1997-12-16 Hitachi Ltd 半導体装置の製造方法
JPH103015A (ja) * 1996-06-14 1998-01-06 Furukawa Electric Co Ltd:The ハイブリッド光集積回路の製造方法
JPH10308555A (ja) * 1997-05-01 1998-11-17 Nippon Telegr & Teleph Corp <Ntt> ハイブリッド導波形光回路とその製造方法
JPH11190811A (ja) * 1997-12-25 1999-07-13 Kyocera Corp 光デバイス実装用基板及びその製造方法並びに光モジュール
JPH11211925A (ja) * 1998-01-27 1999-08-06 Japan Aviation Electronics Ind Ltd 光導波路
JP2000216473A (ja) * 1999-01-22 2000-08-04 Hitachi Cable Ltd 光モジュ―ル用素子及びその製造方法
JP3902892B2 (ja) * 1999-02-04 2007-04-11 日本オプネクスト株式会社 光モジュール
JP2001242349A (ja) * 2000-02-28 2001-09-07 Kyocera Corp 光部品実装用基板およびそれを用いた光モジュール
JP2001337242A (ja) * 2000-05-25 2001-12-07 Minolta Co Ltd 光結合回路の製造方法
JP2001356228A (ja) * 2000-06-15 2001-12-26 Furukawa Electric Co Ltd:The 光導波路デバイス
JP4671480B2 (ja) * 2000-09-01 2011-04-20 京セラ株式会社 光実装基板の製造方法及び光モジュールの製造方法
JP3712934B2 (ja) * 2000-11-01 2005-11-02 株式会社日立製作所 光導波路部材、その製造方法及び光モジュール
JP2002162527A (ja) * 2000-11-28 2002-06-07 Furukawa Electric Co Ltd:The 光デバイスおよびその光デバイス用半製品

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