JP4078391B2 - 半導体素子およびその製造方法 - Google Patents
半導体素子およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 273
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 60
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 53
- 239000012535 impurity Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 30
- 239000004020 conductor Substances 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 14
- 238000002513 implantation Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 183
- 238000005468 ion implantation Methods 0.000 description 23
- 150000002500 ions Chemical class 0.000 description 15
- 238000000206 photolithography Methods 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 238000000137 annealing Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 230000004913 activation Effects 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000000059 patterning Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- -1 nitrogen ions Chemical class 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
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Description
以下、図面を参照しながら、本発明による半導体素子の第1の実施形態を説明する。本実施形態の半導体素子は、炭化珪素を用いた縦型MOSFETである。
以下、図面を参照しながら、本発明による半導体素子の第2の実施形態を説明する。本実施形態の半導体素子は、炭化珪素を用いた縦型MOSFETであり、ストライプ形状のユニットセルから構成されている点で、図1および図2に示す半導体素子と異なっている。ここでは、各ユニットセルが、チャネル内を電子が流れる方向に対して垂直な方向に延びたストライプ形状を有する櫛形のMOSFETを例に説明する。
10 半導体層
10s 半導体層表面
12 n型ドリフト領域
13 p型ウェル領域
14 n型ソース領域
14s n型ソース領域表面
15 p+型コンタクト領域
15s p+型コンタクト領域表面
16 チャネル層
17 ゲート絶縁膜
18 ゲート電極
19 ソース電極
19s 導電面
21 ドリフト電極
22 層間絶縁膜
23 上部配線電極
100、200 ユニットセル
Claims (16)
- 半導体層と、
前記半導体層の表面に形成された第1導電型半導体領域と、
前記半導体層の前記表面において、前記第1導電型半導体領域の周囲に形成された第2導電型半導体領域と、
前記第1導電型半導体領域および第2導電型半導体領域に接触する導電面を有する導電体と
を備えた半導体素子であって、
前記半導体層は炭化珪素を含み、
前記第1導電型半導体領域および前記導電面のうち少なくとも一方は円ではなく、
前記第1導電型半導体領域および前記導電面は、前記導電面と前記第1導電型半導体領域との間の位置合わせのズレ量がゼロから前記導電面の幅の1/3まで増加するに従って、前記導電面の輪郭のうち前記第1導電型半導体領域を横切る部分の長さがなめらかに変化する形状をそれぞれ有する半導体素子。 - 前記導電面および前記第1導電型半導体領域は四角形であり、前記導電面は、前記第1導電型半導体領域の辺に対して30度以上60度以下の角度をなす辺を有する請求項1に記載の半導体素子。
- 前記導電面および前記第1導電型半導体領域は正方形である請求項2に記載の半導体素子。
- 前記導電面の辺と、前記第1導電型半導体領域の辺とのなす角度は略45度である請求項3に記載の半導体素子。
- 前記第1導電型半導体領域は、各頂点が導電面の対応する辺に重なる形状を有している請求項2に記載の半導体素子。
- 前記導電面と前記第1導電型半導体領域との間の位置合わせのズレ量がゼロから前記導電面の幅の1/3まで増加するに従って、前記導電面の輪郭のうち前記第1導電型半導体領域を横切る部分が複数存在し、前記複数の横切る部分のそれぞれの長さがなめらかに変化する形状をそれぞれ有する請求項1に記載の半導体素子。
- 前記導電面および前記第1導電型半導体領域は四角形であり、前記導電面には前記第1導電型半導体領域が複数配置されており、前記導電面は、前記複数の第1導電型半導体領域の辺に対して30度以上60度以下の角度をなす辺を有する請求項6に記載の半導体素子。
- 前記導電面は長方形であり、前記複数の第1導電型半導体領域は、前記長方形の長辺に平行な方向に沿って配列されている請求項7に記載の半導体素子。
- 前記複数の第1導電型半導体領域は正方形である請求項8に記載の半導体素子。
- 前記導電面の辺と、前記第1導電型半導体領域の辺とのなす角度は略45度である請求項9に記載の半導体素子。
- 各第1導電型半導体領域は、少なくとも2つの頂点が導電面の対応する辺に重なる形状を有している請求項7に記載の半導体素子。
- 前記導電面は四角形であり、前記第1導電型半導体領域は、間隔を空けて配置された複数の正方形部分と、隣接する正方形部分を接続する接続部分とを有しており、
前記導電面は、前記第1導電型半導体領域における前記複数の正方形部分の辺に対して30度以上60度以下の角度をなす辺を有する請求項6に記載の半導体素子。 - 前記導電面は長方形であり、前記第1導電型半導体領域における前記複数の正方形部分は、前記長方形の長辺に平行な方向に沿って配列され、前記接続部分は、前記隣接する正方形部分の対向する頂点を接続している請求項12に記載の半導体素子。
- 前記第1導電型半導体領域における各正方形部分は、少なくとも2つの頂点が前記導電面の対応する辺に重なる形状を有している請求項13に記載の半導体素子。
- 前記第1導電型半導体領域に電気的に接続され、かつ、前記半導体層の表面において前記第2導電型半導体領域を包囲する第1導電型ウェル領域と
前記半導体層の一部を覆うゲート絶縁膜と、
前記ゲート絶縁膜によって前記半導体層から絶縁されたゲート電極と、
前記導電体と電気的に接続された上部配線電極と、
前記基板の裏面に形成されたドレイン電極と
をさらに備えた請求項1から14のいずれかに記載の半導体素子。 - (A)第1の注入マスクを用いて、炭化珪素を含む半導体層に対して第1導電型の不純物を注入することにより、前記半導体層の表面に第1導電型半導体領域を形成する工程と、
(B)第2の注入マスクを用いて、前記半導体層に対して第2導電型の不純物を注入することにより、前記半導体層の表面に第2導電型半導体領域を形成する工程と、
(C)導電面を有する導電体を設ける工程と
を包含し、
前記工程(A)および(B)によって、前記第1導電型半導体領域の周囲に前記第2導電型半導体領域が位置する構造が形成され、
前記工程(C)は、前記導電面が前記第1導電型半導体領域および第2導電型半導体領域に接触するように、前記導電面と前記第1導電型半導体領域との間の位置合わせを行う工程を含んでおり、
前記第1導電型半導体領域および前記導電面のうち少なくとも一方は円ではなく、
前記第1導電型半導体領域および前記導電面は、前記導電面と前記第1導電型半導体領域との間の位置合わせのズレ量がゼロから前記導電面の幅の1/3まで増加するに従って、前記導電面の輪郭のうち前記第1導電型半導体領域を横切る部分の長さがなめらかに変化する形状をそれぞれ有する半導体素子の製造方法。
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CN101689565B (zh) * | 2008-05-13 | 2011-06-08 | 松下电器产业株式会社 | 半导体元件 |
US8129758B2 (en) | 2008-07-09 | 2012-03-06 | Panasonic Corporation | Semiconductor element and manufacturing method therefor |
JPWO2011013364A1 (ja) | 2009-07-28 | 2013-01-07 | パナソニック株式会社 | 半導体素子の製造方法 |
JP5240164B2 (ja) * | 2009-11-09 | 2013-07-17 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP2011246315A (ja) * | 2010-05-28 | 2011-12-08 | Sumitomo Electric Ind Ltd | 炭化珪素基板およびその製造方法 |
EP2610914B1 (en) * | 2010-10-29 | 2015-01-07 | Panasonic Corporation | Semiconductor element |
US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
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JP6042658B2 (ja) * | 2011-09-07 | 2016-12-14 | トヨタ自動車株式会社 | SiC半導体素子の製造方法 |
US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
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WO2013036370A1 (en) | 2011-09-11 | 2013-03-14 | Cree, Inc. | High current density power module comprising transistors with improved layout |
US11721547B2 (en) * | 2013-03-14 | 2023-08-08 | Infineon Technologies Ag | Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device |
US10192958B2 (en) * | 2014-06-24 | 2019-01-29 | General Electric Company | Cellular layout for semiconductor devices |
US10199465B2 (en) * | 2014-06-24 | 2019-02-05 | General Electric Company | Cellular layout for semiconductor devices |
CN105576013B (zh) * | 2014-10-31 | 2020-04-21 | 精工爱普生株式会社 | 带碳化硅膜基板及其制造方法、以及半导体装置 |
CN107636835B (zh) * | 2015-12-11 | 2021-03-19 | 富士电机株式会社 | 半导体装置及制造方法 |
JP6711100B2 (ja) * | 2016-04-15 | 2020-06-17 | 富士電機株式会社 | 炭化珪素半導体装置、炭化珪素半導体装置の製造方法および炭化珪素半導体装置の制御方法 |
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FR2642902B1 (fr) | 1989-02-03 | 1991-05-17 | Telemecanique | Composant semi-conducteur de puissance cellulaire |
US6573534B1 (en) | 1995-09-06 | 2003-06-03 | Denso Corporation | Silicon carbide semiconductor device |
JPH11266017A (ja) | 1998-01-14 | 1999-09-28 | Denso Corp | 炭化珪素半導体装置及びその製造方法 |
JP4568929B2 (ja) * | 1999-09-21 | 2010-10-27 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
JP3620472B2 (ja) | 2001-06-13 | 2005-02-16 | サンケン電気株式会社 | 絶縁ゲート型電界効果トランジスタ |
JP3952978B2 (ja) | 2003-03-24 | 2007-08-01 | 日産自動車株式会社 | 炭化珪素半導体素子 |
US20050012143A1 (en) | 2003-06-24 | 2005-01-20 | Hideaki Tanaka | Semiconductor device and method of manufacturing the same |
JP3711989B2 (ja) * | 2003-06-24 | 2005-11-02 | 日産自動車株式会社 | 半導体装置およびその製造方法 |
JP2006032411A (ja) | 2004-07-12 | 2006-02-02 | Nissan Motor Co Ltd | 炭化珪素半導体装置の内接伝導領域複合体およびその製造方法 |
JP2006059940A (ja) | 2004-08-19 | 2006-03-02 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
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2007
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- 2007-05-17 CN CN2007800181221A patent/CN101449384B/zh active Active
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CN101449384B (zh) | 2011-06-08 |
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WO2007135940A1 (ja) | 2007-11-29 |
US8125005B2 (en) | 2012-02-28 |
JPWO2007135940A1 (ja) | 2009-10-01 |
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