JP4073652B2 - 炭化珪素単結晶およびその製造方法 - Google Patents

炭化珪素単結晶およびその製造方法 Download PDF

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JP4073652B2
JP4073652B2 JP2001323016A JP2001323016A JP4073652B2 JP 4073652 B2 JP4073652 B2 JP 4073652B2 JP 2001323016 A JP2001323016 A JP 2001323016A JP 2001323016 A JP2001323016 A JP 2001323016A JP 4073652 B2 JP4073652 B2 JP 4073652B2
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crystal
single crystal
silicon carbide
carbide single
seed crystal
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Japanese (ja)
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JP2003128497A (ja
JP2003128497A5 (enExample
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直樹 小柳
和雄 荒井
伸一 西澤
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National Institute of Advanced Industrial Science and Technology AIST
Resonac Holdings Corp
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Showa Denko KK
National Institute of Advanced Industrial Science and Technology AIST
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JP2001323016A 2001-10-22 2001-10-22 炭化珪素単結晶およびその製造方法 Expired - Fee Related JP4073652B2 (ja)

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JP2001323016A JP4073652B2 (ja) 2001-10-22 2001-10-22 炭化珪素単結晶およびその製造方法

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JP2001323016A JP4073652B2 (ja) 2001-10-22 2001-10-22 炭化珪素単結晶およびその製造方法

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JP2003128497A JP2003128497A (ja) 2003-05-08
JP2003128497A5 JP2003128497A5 (enExample) 2005-03-17
JP4073652B2 true JP4073652B2 (ja) 2008-04-09

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CN113512758B (zh) * 2020-04-09 2024-07-05 赛尼克公司 碳化硅晶锭及其制造方法和用于制造碳化硅晶锭的系统

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