JP4073418B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP4073418B2 JP4073418B2 JP2004131421A JP2004131421A JP4073418B2 JP 4073418 B2 JP4073418 B2 JP 4073418B2 JP 2004131421 A JP2004131421 A JP 2004131421A JP 2004131421 A JP2004131421 A JP 2004131421A JP 4073418 B2 JP4073418 B2 JP 4073418B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- superheated steam
- chemical
- processing
- pure water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2230/00—Other cleaning aspects applicable to all B08B range
- B08B2230/01—Cleaning with steam
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
上記実施例2の変形例について、図10を参照して説明する。
SC1(アンモニア、過酸化水素水、純水の混合液)
SC2(塩酸、過酸化水素水、純水の混合液)
SPM(硫酸、過酸化水素水の混合液)
BHF(緩衝フッ酸溶液)
燐酸(H3PO4)
1 … 処理槽
3 … 内槽
5 … 外槽
7 … チャンバー
9 … リフター
25 … 供給配管(薬液供給系)
35 … 純水供給源
37 … 薬液供給源
39 … 供給ノズル(過熱蒸気供給系)
43 … 蒸気供給源
45 … 配管
51 … 加熱ヒータ
Claims (3)
- 基板に所定の処理を行う基板処理装置において、
薬液を貯留する処理槽と、
前記処理槽内で基板を保持する保持機構と、
前記処理槽へ薬液を供給する薬液供給系と、
前記処理槽へ窒素を供給するとともに、前記処理槽の基板へ向けて純水を過熱した過熱蒸気を基板へ供給する過熱蒸気供給系と、
前記処理槽に貯留された薬液を前記処理槽から排出させて、前記処理槽内の薬液液面と前記保持機構により保持された基板とを相対的に移動させる排出機構を備え、
前記処理槽内において薬液による基板の薬液処理を行った後、前記過熱蒸気供給系から窒素を前記処理槽内に向けて供給させ、さらに前記排出機構により前記処理槽から薬液を排出させつつ、前記過熱蒸気供給系から前記処理槽内の基板へ向けて過熱蒸気を供給させることを特徴とする基板処理装置。 - 請求項1に記載の基板処理装置において、
前記過熱蒸気供給系からの過熱蒸気の供給は、最終の純水洗浄処理であることを特徴とする基板処理装置。 - 請求項1に記載の基板処理装置において、
前記過熱蒸気供給系は、純水から過熱蒸気を生成する際に、100〜180℃の温度範囲で過熱することを特徴とする基板処理装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004131421A JP4073418B2 (ja) | 2004-04-27 | 2004-04-27 | 基板処理装置 |
US11/106,313 US20050236018A1 (en) | 2004-04-27 | 2005-04-14 | Substrate treating method and apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004131421A JP4073418B2 (ja) | 2004-04-27 | 2004-04-27 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005317637A JP2005317637A (ja) | 2005-11-10 |
JP4073418B2 true JP4073418B2 (ja) | 2008-04-09 |
Family
ID=35135216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004131421A Expired - Fee Related JP4073418B2 (ja) | 2004-04-27 | 2004-04-27 | 基板処理装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20050236018A1 (ja) |
JP (1) | JP4073418B2 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070261718A1 (en) * | 2006-05-10 | 2007-11-15 | Rubinder Randhawa | Method and apparatus for ozone-enhanced cleaning of flat objects with pulsed liquid jet |
JP2008135545A (ja) * | 2006-11-28 | 2008-06-12 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
DE102007009031B4 (de) * | 2007-02-23 | 2012-06-14 | Webasto Ag | Verfahren zur Herstellung einer Scheibenanordnung für ein Fahrzeug oder Bauwerk |
DE102007009032A1 (de) * | 2007-02-23 | 2008-08-28 | Webasto Ag | Scheibenanordnung für ein Fahrzeug oder Bauwerk |
DE102007009030B4 (de) * | 2007-02-23 | 2016-01-28 | Webasto Ag | Verfahren zur Herstellung einer Scheibenanordnung für ein Fahrzeug oder Bauwerk |
JP2008212862A (ja) * | 2007-03-06 | 2008-09-18 | Hitachi High-Technologies Corp | パネルの洗浄方法及び洗浄装置、並びにフラットパネルディスプレイの製造方法 |
US9295167B2 (en) | 2007-10-30 | 2016-03-22 | Acm Research (Shanghai) Inc. | Method to prewet wafer surface |
WO2009055989A1 (en) * | 2007-10-30 | 2009-05-07 | Acm Research (Shanghai) Inc. | Method and apparatus to prewet wafer surface for metallization from electrolyte solution |
KR101421752B1 (ko) * | 2008-10-21 | 2014-07-22 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 기판 처리 방법 |
DE102009035341A1 (de) * | 2009-07-23 | 2011-01-27 | Gebr. Schmid Gmbh & Co. | Vorrichtung zur Reinigung von Substraten an einem Träger |
JP2012060000A (ja) * | 2010-09-10 | 2012-03-22 | Toshiba Corp | シリコン酸化膜の製造装置 |
JP5512560B2 (ja) * | 2011-01-18 | 2014-06-04 | 東京エレクトロン株式会社 | 液処理装置 |
JP5652357B2 (ja) * | 2011-09-06 | 2015-01-14 | Tdk株式会社 | 洗浄乾燥装置 |
TWI576938B (zh) * | 2012-08-17 | 2017-04-01 | 斯克林集團公司 | 基板處理裝置及基板處理方法 |
JP6100487B2 (ja) * | 2012-08-20 | 2017-03-22 | 株式会社Screenホールディングス | 基板処理装置 |
TWI597770B (zh) * | 2013-09-27 | 2017-09-01 | 斯克林集團公司 | 基板處理裝置及基板處理方法 |
JP7390217B2 (ja) * | 2020-03-09 | 2023-12-01 | 東京エレクトロン株式会社 | 基板処理装置および導電性配管劣化度合い判定方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001176833A (ja) * | 1999-12-14 | 2001-06-29 | Tokyo Electron Ltd | 基板処理装置 |
-
2004
- 2004-04-27 JP JP2004131421A patent/JP4073418B2/ja not_active Expired - Fee Related
-
2005
- 2005-04-14 US US11/106,313 patent/US20050236018A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2005317637A (ja) | 2005-11-10 |
US20050236018A1 (en) | 2005-10-27 |
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