JP4070974B2 - プラズマ処理方法及びプラズマ処理装置 - Google Patents

プラズマ処理方法及びプラズマ処理装置 Download PDF

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Publication number
JP4070974B2
JP4070974B2 JP2001319755A JP2001319755A JP4070974B2 JP 4070974 B2 JP4070974 B2 JP 4070974B2 JP 2001319755 A JP2001319755 A JP 2001319755A JP 2001319755 A JP2001319755 A JP 2001319755A JP 4070974 B2 JP4070974 B2 JP 4070974B2
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Japan
Prior art keywords
frequency power
voltage
power supply
upper electrode
plasma processing
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Expired - Lifetime
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JP2001319755A
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English (en)
Japanese (ja)
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JP2003124198A5 (enrdf_load_stackoverflow
JP2003124198A (ja
Inventor
紀和 山田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2001319755A priority Critical patent/JP4070974B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN2006101418496A priority patent/CN1956618B/zh
Priority to US10/480,821 priority patent/US7476624B2/en
Priority to KR1020057025126A priority patent/KR100764248B1/ko
Priority to CNB028119614A priority patent/CN1287430C/zh
Priority to KR1020037016380A priority patent/KR100595069B1/ko
Priority to PCT/JP2002/005637 priority patent/WO2002103773A1/ja
Publication of JP2003124198A publication Critical patent/JP2003124198A/ja
Publication of JP2003124198A5 publication Critical patent/JP2003124198A5/ja
Application granted granted Critical
Publication of JP4070974B2 publication Critical patent/JP4070974B2/ja
Priority to US12/335,872 priority patent/US8288286B2/en
Priority to US13/620,893 priority patent/US20130025789A1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2001319755A 2001-06-15 2001-10-17 プラズマ処理方法及びプラズマ処理装置 Expired - Lifetime JP4070974B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2001319755A JP4070974B2 (ja) 2001-10-17 2001-10-17 プラズマ処理方法及びプラズマ処理装置
PCT/JP2002/005637 WO2002103773A1 (en) 2001-06-15 2002-06-07 Dry-etcching method
US10/480,821 US7476624B2 (en) 2001-06-15 2002-06-07 Dry-etching method
KR1020057025126A KR100764248B1 (ko) 2001-06-15 2002-06-07 드라이 에칭 방법
CNB028119614A CN1287430C (zh) 2001-06-15 2002-06-07 干蚀刻方法
KR1020037016380A KR100595069B1 (ko) 2001-06-15 2002-06-07 드라이 에칭 방법
CN2006101418496A CN1956618B (zh) 2001-06-15 2002-06-07 干蚀刻方法
US12/335,872 US8288286B2 (en) 2001-06-15 2008-12-16 Dry-etching method
US13/620,893 US20130025789A1 (en) 2001-06-15 2012-09-15 Dry-etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001319755A JP4070974B2 (ja) 2001-10-17 2001-10-17 プラズマ処理方法及びプラズマ処理装置

Publications (3)

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JP2003124198A JP2003124198A (ja) 2003-04-25
JP2003124198A5 JP2003124198A5 (enrdf_load_stackoverflow) 2005-06-30
JP4070974B2 true JP4070974B2 (ja) 2008-04-02

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JP2001319755A Expired - Lifetime JP4070974B2 (ja) 2001-06-15 2001-10-17 プラズマ処理方法及びプラズマ処理装置

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JP (1) JP4070974B2 (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050069651A1 (en) * 2003-09-30 2005-03-31 Tokyo Electron Limited Plasma processing system
JP4527431B2 (ja) 2004-04-08 2010-08-18 東京エレクトロン株式会社 プラズマ処理装置
JP4527432B2 (ja) 2004-04-08 2010-08-18 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP4523352B2 (ja) * 2004-07-20 2010-08-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR100855002B1 (ko) * 2007-05-23 2008-08-28 삼성전자주식회사 플라즈마 이온 주입시스템
JP6558901B2 (ja) 2015-01-06 2019-08-14 東京エレクトロン株式会社 プラズマ処理方法
JP7389573B2 (ja) * 2019-06-26 2023-11-30 株式会社アルバック プラズマ処理装置およびプラズマ処理方法
JP7236954B2 (ja) * 2019-08-06 2023-03-10 東京エレクトロン株式会社 プラズマ処理装置

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JP2003124198A (ja) 2003-04-25

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