JP4065876B2 - パッド下の集積半導体構造 - Google Patents
パッド下の集積半導体構造 Download PDFInfo
- Publication number
- JP4065876B2 JP4065876B2 JP2004516476A JP2004516476A JP4065876B2 JP 4065876 B2 JP4065876 B2 JP 4065876B2 JP 2004516476 A JP2004516476 A JP 2004516476A JP 2004516476 A JP2004516476 A JP 2004516476A JP 4065876 B2 JP4065876 B2 JP 4065876B2
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- Japan
- Prior art keywords
- metal
- semiconductor structure
- structure according
- pad
- metal layer
- Prior art date
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- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims description 71
- 229910052751 metal Inorganic materials 0.000 claims description 142
- 239000002184 metal Substances 0.000 claims description 142
- 239000004020 conductor Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
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- H01L2224/05089—Disposition of the additional element
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10229493A DE10229493B4 (de) | 2002-07-01 | 2002-07-01 | Integrierte Halbleiterstruktur |
PCT/DE2003/001955 WO2004004002A1 (de) | 2002-07-01 | 2003-06-12 | Unter ein pad integrierte halbleiterstruktur |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006502561A JP2006502561A (ja) | 2006-01-19 |
JP4065876B2 true JP4065876B2 (ja) | 2008-03-26 |
Family
ID=29796063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004516476A Expired - Fee Related JP4065876B2 (ja) | 2002-07-01 | 2003-06-12 | パッド下の集積半導体構造 |
Country Status (7)
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006108329A (ja) * | 2004-10-04 | 2006-04-20 | Fujitsu Ltd | 半導体装置 |
CN100413066C (zh) * | 2005-11-30 | 2008-08-20 | 中芯国际集成电路制造(上海)有限公司 | 低k介电材料的接合焊盘和用于制造半导体器件的方法 |
JP5353313B2 (ja) | 2009-03-06 | 2013-11-27 | 富士通セミコンダクター株式会社 | 半導体装置 |
KR101823677B1 (ko) | 2011-04-21 | 2018-01-30 | 엘지이노텍 주식회사 | 엘이디 조명장치 |
US20130154099A1 (en) * | 2011-12-16 | 2013-06-20 | Semiconductor Components Industries, Llc | Pad over interconnect pad structure design |
CN102571135B (zh) * | 2012-02-15 | 2014-05-14 | 京信通信系统(中国)有限公司 | 射频半集成应用装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2598328B2 (ja) * | 1989-10-17 | 1997-04-09 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
EP0637840A1 (en) * | 1993-08-05 | 1995-02-08 | AT&T Corp. | Integrated circuit with active devices under bond pads |
KR100267105B1 (ko) * | 1997-12-09 | 2000-11-01 | 윤종용 | 다층패드를구비한반도체소자및그제조방법 |
US5986343A (en) * | 1998-05-04 | 1999-11-16 | Lucent Technologies Inc. | Bond pad design for integrated circuits |
US6232662B1 (en) * | 1998-07-14 | 2001-05-15 | Texas Instruments Incorporated | System and method for bonding over active integrated circuits |
US6087732A (en) * | 1998-09-28 | 2000-07-11 | Lucent Technologies, Inc. | Bond pad for a flip-chip package |
JP2000183104A (ja) * | 1998-12-15 | 2000-06-30 | Texas Instr Inc <Ti> | 集積回路上でボンディングするためのシステム及び方法 |
TW430935B (en) * | 1999-03-19 | 2001-04-21 | Ind Tech Res Inst | Frame type bonding pad structure having a low parasitic capacitance |
JP3727220B2 (ja) * | 2000-04-03 | 2005-12-14 | Necエレクトロニクス株式会社 | 半導体装置 |
US7201784B2 (en) * | 2003-06-30 | 2007-04-10 | Intel Corporation | Surfactant slurry additives to improve erosion, dishing, and defects during chemical mechanical polishing of copper damascene with low k dielectrics |
-
2002
- 2002-07-01 DE DE10229493A patent/DE10229493B4/de not_active Expired - Fee Related
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2003
- 2003-05-23 TW TW092114098A patent/TWI237890B/zh not_active IP Right Cessation
- 2003-06-12 WO PCT/DE2003/001955 patent/WO2004004002A1/de active Application Filing
- 2003-06-12 DE DE50311482T patent/DE50311482D1/de not_active Expired - Lifetime
- 2003-06-12 US US10/519,860 patent/US7190077B2/en not_active Expired - Lifetime
- 2003-06-12 EP EP03761414A patent/EP1518272B1/de not_active Expired - Lifetime
- 2003-06-12 CN CNB038157144A patent/CN100440497C/zh not_active Expired - Fee Related
- 2003-06-12 JP JP2004516476A patent/JP4065876B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7190077B2 (en) | 2007-03-13 |
DE10229493A1 (de) | 2004-01-29 |
CN1666336A (zh) | 2005-09-07 |
CN100440497C (zh) | 2008-12-03 |
JP2006502561A (ja) | 2006-01-19 |
DE50311482D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 2009-06-10 |
TWI237890B (en) | 2005-08-11 |
EP1518272A1 (de) | 2005-03-30 |
WO2004004002A1 (de) | 2004-01-08 |
US20050242374A1 (en) | 2005-11-03 |
TW200402863A (en) | 2004-02-16 |
DE10229493B4 (de) | 2007-03-29 |
EP1518272B1 (de) | 2009-04-29 |
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