JP4053723B2 - 露光用マスクの製造方法 - Google Patents

露光用マスクの製造方法 Download PDF

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Publication number
JP4053723B2
JP4053723B2 JP2000294979A JP2000294979A JP4053723B2 JP 4053723 B2 JP4053723 B2 JP 4053723B2 JP 2000294979 A JP2000294979 A JP 2000294979A JP 2000294979 A JP2000294979 A JP 2000294979A JP 4053723 B2 JP4053723 B2 JP 4053723B2
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JP
Japan
Prior art keywords
exposure
pattern
substrate
mask
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000294979A
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English (en)
Japanese (ja)
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JP2002107911A (ja
JP2002107911A5 (enExample
Inventor
帥現 姜
巌 東川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000294979A priority Critical patent/JP4053723B2/ja
Priority to US09/961,488 priority patent/US6635549B2/en
Publication of JP2002107911A publication Critical patent/JP2002107911A/ja
Publication of JP2002107911A5 publication Critical patent/JP2002107911A5/ja
Application granted granted Critical
Publication of JP4053723B2 publication Critical patent/JP4053723B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/102—Mask alignment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/975—Substrate or mask aligning feature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2000294979A 2000-09-27 2000-09-27 露光用マスクの製造方法 Expired - Fee Related JP4053723B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000294979A JP4053723B2 (ja) 2000-09-27 2000-09-27 露光用マスクの製造方法
US09/961,488 US6635549B2 (en) 2000-09-27 2001-09-25 Method of producing exposure mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000294979A JP4053723B2 (ja) 2000-09-27 2000-09-27 露光用マスクの製造方法

Publications (3)

Publication Number Publication Date
JP2002107911A JP2002107911A (ja) 2002-04-10
JP2002107911A5 JP2002107911A5 (enExample) 2005-06-16
JP4053723B2 true JP4053723B2 (ja) 2008-02-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000294979A Expired - Fee Related JP4053723B2 (ja) 2000-09-27 2000-09-27 露光用マスクの製造方法

Country Status (2)

Country Link
US (1) US6635549B2 (enExample)
JP (1) JP4053723B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI700562B (zh) * 2018-02-27 2020-08-01 荷蘭商Ａｓｍｌ荷蘭公司 在一微影製程之對準標記定位

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* Cited by examiner, † Cited by third party
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JP4053723B2 (ja) * 2000-09-27 2008-02-27 株式会社東芝 露光用マスクの製造方法
JP2004219876A (ja) * 2003-01-17 2004-08-05 Toppan Printing Co Ltd 重ね描画時の補正描画方法
JP2005085922A (ja) * 2003-09-08 2005-03-31 Canon Inc マスク作製方法及び微小開口を有するマスク
JP4393164B2 (ja) * 2003-12-02 2010-01-06 シャープ株式会社 フォトマスクとその製造方法、および、それを用いた露光方法
KR100848815B1 (ko) * 2004-11-08 2008-07-28 엘지마이크론 주식회사 하프톤 마스크 및 그 제조방법 및 이를 이용한평판패널디스플레이
US7704646B2 (en) * 2004-11-08 2010-04-27 Lg Innotek Co., Ltd. Half tone mask and method for fabricating the same
US7439083B2 (en) * 2005-04-14 2008-10-21 Delphi Technologies, Inc. Technique for compensating for substrate shrinkage during manufacture of an electronic assembly
US7643130B2 (en) * 2005-11-04 2010-01-05 Nuflare Technology, Inc. Position measuring apparatus and positional deviation measuring method
JP4843304B2 (ja) 2005-12-14 2011-12-21 富士通セミコンダクター株式会社 フォトマスクの製造方法、デバイスの製造方法、及び、フォトマスクのモニタ方法
JP2007248943A (ja) * 2006-03-17 2007-09-27 Hoya Corp パターン形成方法及びグレートーンマスクの製造方法
US8236579B2 (en) * 2007-03-14 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and systems for lithography alignment
KR100972910B1 (ko) * 2007-11-29 2010-07-28 주식회사 하이닉스반도체 노광마스크 및 이를 이용한 반도체소자 형성방법
ATE521979T1 (de) * 2007-12-17 2011-09-15 Zeiss Carl Nts Gmbh Rasterabtaststrahlen geladener teilchen
KR100980060B1 (ko) 2008-06-20 2010-09-03 주식회사 하이닉스반도체 포토마스크 검사방법
NL2007615A (en) 2010-11-30 2012-05-31 Asml Netherlands Bv Method of operating a patterning device and lithographic apparatus.
US8518611B2 (en) * 2011-01-14 2013-08-27 International Business Machines Corporation Multiple lithographic system mask shape sleeving
KR101407230B1 (ko) * 2012-05-14 2014-06-13 주식회사 에스앤에스텍 블랭크 마스크, 포토마스크 및 그의 제조 방법
WO2019124174A1 (ja) 2017-12-18 2019-06-27 株式会社クボタ コンバイン制御システム、コンバイン制御プログラム、コンバイン制御プログラムを記録した記録媒体、コンバイン制御方法、収穫機制御システム、収穫機制御プログラム、収穫機制御プログラムを記録した記録媒体、収穫機制御方法
JP6861693B2 (ja) * 2018-12-06 2021-04-21 キヤノン株式会社 形成方法、システム、リソグラフィ装置、物品の製造方法、およびプログラム
JP7203959B2 (ja) * 2018-12-19 2023-01-13 江蘇影速集成電路装備股▲ふん▼有限公司 両面露光のアライメント装置、方法、及び設備
CN109830508B (zh) * 2019-01-09 2021-06-01 昆山国显光电有限公司 像素阵列基板和验证掩膜板的方法
JP7089607B2 (ja) * 2021-02-05 2022-06-22 キヤノン株式会社 リソグラフィ装置
CN114185244B (zh) * 2022-02-15 2022-06-03 绍兴中芯集成电路制造股份有限公司 光罩组及晶圆标注方法

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JPS5882248A (ja) * 1981-11-12 1983-05-17 Canon Inc 自動整合装置
JPS58116541A (ja) * 1981-12-29 1983-07-11 Canon Inc 整合方法
US4780615A (en) * 1985-02-01 1988-10-25 Canon Kabushiki Kaisha Alignment system for use in pattern transfer apparatus
JPS62262426A (ja) * 1986-05-09 1987-11-14 Canon Inc 露光装置
JPH02246314A (ja) * 1989-03-20 1990-10-02 Fujitsu Ltd パターン作成方法
JP3109852B2 (ja) * 1991-04-16 2000-11-20 キヤノン株式会社 投影露光装置
JP3140516B2 (ja) 1991-11-19 2001-03-05 大日本印刷株式会社 アライメントパターンを有するパターン版の描画方法及びその方法によって描画されたパターン版
JPH11307449A (ja) * 1998-02-20 1999-11-05 Canon Inc 露光装置及びデバイスの製造方法
TW352420B (en) * 1998-06-25 1999-02-11 United Microelectronics Corp Back alignment mark for half tone phase shift mask
JP2001235850A (ja) * 2000-02-24 2001-08-31 Sony Corp フォトマスクパターンの設計方法、レジストパターンの形成方法および半導体装置の製造方法
JP4053723B2 (ja) * 2000-09-27 2008-02-27 株式会社東芝 露光用マスクの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI700562B (zh) * 2018-02-27 2020-08-01 荷蘭商Ａｓｍｌ荷蘭公司 在一微影製程之對準標記定位

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JP2002107911A (ja) 2002-04-10
US20020037625A1 (en) 2002-03-28
US6635549B2 (en) 2003-10-21

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