JP4047064B2 - 高周波半導体装置 - Google Patents

高周波半導体装置 Download PDF

Info

Publication number
JP4047064B2
JP4047064B2 JP2002142123A JP2002142123A JP4047064B2 JP 4047064 B2 JP4047064 B2 JP 4047064B2 JP 2002142123 A JP2002142123 A JP 2002142123A JP 2002142123 A JP2002142123 A JP 2002142123A JP 4047064 B2 JP4047064 B2 JP 4047064B2
Authority
JP
Japan
Prior art keywords
frequency
frequency semiconductor
wiring
semiconductor device
type silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002142123A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003037180A (ja
JP2003037180A5 (https=
Inventor
俊文 中谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2002142123A priority Critical patent/JP4047064B2/ja
Publication of JP2003037180A publication Critical patent/JP2003037180A/ja
Publication of JP2003037180A5 publication Critical patent/JP2003037180A5/ja
Application granted granted Critical
Publication of JP4047064B2 publication Critical patent/JP4047064B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2002142123A 2001-05-17 2002-05-16 高周波半導体装置 Expired - Lifetime JP4047064B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002142123A JP4047064B2 (ja) 2001-05-17 2002-05-16 高周波半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001147612 2001-05-17
JP2001-147612 2001-05-17
JP2002142123A JP4047064B2 (ja) 2001-05-17 2002-05-16 高周波半導体装置

Publications (3)

Publication Number Publication Date
JP2003037180A JP2003037180A (ja) 2003-02-07
JP2003037180A5 JP2003037180A5 (https=) 2005-09-29
JP4047064B2 true JP4047064B2 (ja) 2008-02-13

Family

ID=26615258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002142123A Expired - Lifetime JP4047064B2 (ja) 2001-05-17 2002-05-16 高周波半導体装置

Country Status (1)

Country Link
JP (1) JP4047064B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4933036B2 (ja) * 2003-07-03 2012-05-16 パナソニック株式会社 差動容量素子、差動アンテナ素子及び差動共振素子
US6940707B2 (en) 2003-07-03 2005-09-06 Matsushita Electric Industrial Co., Ltd. Differential capacitor, differential antenna element, and differential resonator
JP5177387B2 (ja) * 2008-02-08 2013-04-03 日本電気株式会社 インダクタ用シールドおよびシールド付きインダクタ
CN114496358A (zh) * 2022-01-21 2022-05-13 武汉衷华脑机融合科技发展有限公司 一种连接线结构及其形成方法

Also Published As

Publication number Publication date
JP2003037180A (ja) 2003-02-07

Similar Documents

Publication Publication Date Title
US6903459B2 (en) High frequency semiconductor device
US7265433B2 (en) On-pad broadband matching network
JP4012840B2 (ja) 半導体装置
US8432039B2 (en) Integrated circuit device and electronic instrument
JP7133305B2 (ja) ビデオ帯域幅が強化されたrf電力増幅器用のマルチベースバンド終端コンポーネント
JP2003197754A (ja) 高周波半導体装置
KR100475477B1 (ko) 인덕턴스 소자 및 반도체 장치
TWI766337B (zh) 半導體裝置
JP4047064B2 (ja) 高周波半導体装置
JPH11298295A (ja) 不平衡−平衡変換器及びバランス形ミクサ
US6313512B1 (en) Low source inductance compact FET topology for power amplifiers
US6909150B2 (en) Mixed signal integrated circuit with improved isolation
JP3940063B2 (ja) 可変容量素子および可変容量素子内蔵集積回路
US20080116541A1 (en) Structure for integrating an rf shield structure in a carrier substrate
KR100364486B1 (ko) 반도체 장치
EP0708486B1 (en) Semiconductor field effect transistor with large substrate contact region
CN100449759C (zh) 变容二极管
JP3750890B2 (ja) 集積化ミキサ回路
JPH01214055A (ja) 静電破壊保護装置
JP2880023B2 (ja) 高周波トランジスタ回路
JP2638544B2 (ja) 半導体集積回路
JP4031032B2 (ja) 不所望なキャパシタンスを補償する手段を有する電子集積回路装置
JP2000357774A (ja) 複数本導線線路、インダクタ素子及びモノリシックマイクロ波集積回路
JP2011034992A (ja) 半導体装置
JPH02260561A (ja) 半導体装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041208

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050422

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070531

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070612

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070713

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070808

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070927

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20071023

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20071121

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101130

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4047064

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111130

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121130

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121130

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131130

Year of fee payment: 6

EXPY Cancellation because of completion of term