JP4046995B2 - 光半導体装置 - Google Patents
光半導体装置 Download PDFInfo
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- JP4046995B2 JP4046995B2 JP2001373150A JP2001373150A JP4046995B2 JP 4046995 B2 JP4046995 B2 JP 4046995B2 JP 2001373150 A JP2001373150 A JP 2001373150A JP 2001373150 A JP2001373150 A JP 2001373150A JP 4046995 B2 JP4046995 B2 JP 4046995B2
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- 239000004065 semiconductor Substances 0.000 title claims description 56
- 230000003287 optical effect Effects 0.000 title claims description 37
- 239000012535 impurity Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 18
- 230000036961 partial effect Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003503 early effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001373150A JP4046995B2 (ja) | 2001-12-06 | 2001-12-06 | 光半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001373150A JP4046995B2 (ja) | 2001-12-06 | 2001-12-06 | 光半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003174188A JP2003174188A (ja) | 2003-06-20 |
| JP2003174188A5 JP2003174188A5 (cg-RX-API-DMAC7.html) | 2005-05-19 |
| JP4046995B2 true JP4046995B2 (ja) | 2008-02-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001373150A Expired - Fee Related JP4046995B2 (ja) | 2001-12-06 | 2001-12-06 | 光半導体装置 |
Country Status (1)
| Country | Link |
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| JP (1) | JP4046995B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4979513B2 (ja) | 2007-08-22 | 2012-07-18 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| JP7078820B2 (ja) * | 2017-10-24 | 2022-06-01 | 富士通株式会社 | 光検出器、光変調器及び光集積回路 |
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- 2001-12-06 JP JP2001373150A patent/JP4046995B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
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| JP2003174188A (ja) | 2003-06-20 |
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