JP4046123B2 - パターン形成方法およびトランジスタの製造方法 - Google Patents

パターン形成方法およびトランジスタの製造方法 Download PDF

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Publication number
JP4046123B2
JP4046123B2 JP2005135806A JP2005135806A JP4046123B2 JP 4046123 B2 JP4046123 B2 JP 4046123B2 JP 2005135806 A JP2005135806 A JP 2005135806A JP 2005135806 A JP2005135806 A JP 2005135806A JP 4046123 B2 JP4046123 B2 JP 4046123B2
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JP
Japan
Prior art keywords
pattern
pedot
formation method
pattern formation
forming material
Prior art date
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Expired - Fee Related
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JP2005135806A
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English (en)
Japanese (ja)
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JP2005354044A5 (enExample
JP2005354044A (ja
Inventor
リー シュンプ
クリストファー・ニューサム
カグラー トーマス
ラッセル デイビット
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Seiko Epson Corp
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Seiko Epson Corp
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Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of JP2005354044A publication Critical patent/JP2005354044A/ja
Publication of JP2005354044A5 publication Critical patent/JP2005354044A5/ja
Application granted granted Critical
Publication of JP4046123B2 publication Critical patent/JP4046123B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Ink Jet Recording Methods And Recording Media Thereof (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2005135806A 2004-05-07 2005-05-09 パターン形成方法およびトランジスタの製造方法 Expired - Fee Related JP4046123B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0410236A GB2413895A (en) 2004-05-07 2004-05-07 Patterning substrates by ink-jet or pad printing

Publications (3)

Publication Number Publication Date
JP2005354044A JP2005354044A (ja) 2005-12-22
JP2005354044A5 JP2005354044A5 (enExample) 2006-10-26
JP4046123B2 true JP4046123B2 (ja) 2008-02-13

Family

ID=32482864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005135806A Expired - Fee Related JP4046123B2 (ja) 2004-05-07 2005-05-09 パターン形成方法およびトランジスタの製造方法

Country Status (6)

Country Link
US (1) US7271098B2 (enExample)
EP (1) EP1594178A2 (enExample)
JP (1) JP4046123B2 (enExample)
KR (1) KR100691706B1 (enExample)
CN (1) CN1693993A (enExample)
GB (1) GB2413895A (enExample)

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US6723299B1 (en) 2001-05-17 2004-04-20 Zyvex Corporation System and method for manipulating nanotubes
US6905667B1 (en) 2002-05-02 2005-06-14 Zyvex Corporation Polymer and method for using the polymer for noncovalently functionalizing nanotubes
US20040034177A1 (en) 2002-05-02 2004-02-19 Jian Chen Polymer and method for using the polymer for solubilizing nanotubes
CN1813023A (zh) 2003-05-22 2006-08-02 塞威公司 纳米复合材料和生产方法
US7296576B2 (en) 2004-08-18 2007-11-20 Zyvex Performance Materials, Llc Polymers for enhanced solubility of nanomaterials, compositions and methods therefor
GB2424759A (en) * 2005-04-01 2006-10-04 Seiko Epson Corp Inkjet deposition of polythiophene semiconductor material dissolved in halogenated aromatic solvents
GB2427509A (en) * 2005-06-21 2006-12-27 Seiko Epson Corp Organic electronic device fabrication by micro-embossing
KR100746332B1 (ko) * 2005-08-03 2007-08-03 한국과학기술원 광가교 가능한 콜로이드 입자를 이용한 다차원 나노패턴형성방법
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
KR101206661B1 (ko) * 2006-06-02 2012-11-30 삼성전자주식회사 동일 계열의 소재로 형성된 반도체층 및 소스/드레인전극을 포함하는 유기 전자 소자
KR101340727B1 (ko) 2006-09-11 2013-12-12 엘지디스플레이 주식회사 박막 패턴의 제조방법 및 이를 이용한 액정표시패널 및 그제조방법
GB0702092D0 (en) * 2007-02-02 2007-03-14 Fracture Code Corp Aps Graphic Code Application Apparatus and Method
WO2009017700A1 (en) * 2007-07-27 2009-02-05 The Regents Of The University Of California Polymer electronic devices by all-solution process
DE102007057650A1 (de) * 2007-11-28 2009-06-04 H.C. Starck Gmbh Strukturierung von leitfähigen Polymerschichten mittels des Lift-Off-Prozesses
KR101397445B1 (ko) 2007-12-06 2014-05-20 엘지디스플레이 주식회사 유기박막트랜지스터 제조방법
KR100969172B1 (ko) 2009-06-22 2010-07-14 한국기계연구원 마스크 템플릿을 이용한 미세패턴 형성방법
US9340697B2 (en) 2009-08-14 2016-05-17 Nano-C, Inc. Solvent-based and water-based carbon nanotube inks with removable additives
JP5871395B2 (ja) * 2009-08-14 2016-03-01 ナノ−シー インコーポレイテッドＮａｎｏ−Ｃ， Ｉｎｃ． 除去可能添加物を含む、溶剤性カーボンナノチューブインクおよび水性カーボンナノチューブインク
KR100991105B1 (ko) * 2009-10-23 2010-11-01 한국기계연구원 자기패턴된 전도성 패턴과 도금을 이용한 고전도도 미세패턴 형성방법
KR100991103B1 (ko) 2009-10-23 2010-11-01 한국기계연구원 표면개질된 마스크 템플릿을 이용한 미세 도전패턴 형성방법
KR102008982B1 (ko) * 2011-12-22 2019-08-08 김정식 테두리 전극부를 형성한 투명유리판의 제조방법과 그에 의하여 제작된 투명유리판
CN102593047A (zh) * 2012-02-24 2012-07-18 温州大学 基于油溶性纳米颗粒墨水的导电薄膜图案层制备方法
FR2993999B1 (fr) * 2012-07-27 2014-09-12 Nanomade Concept Procede pour la fabrication d'une surface tactile transparente et surface tactile obtenue par un tel procede
CN103272747B (zh) * 2013-05-29 2015-07-22 苏州汉纳材料科技有限公司 图案化碳纳米管透明导电薄膜的生产方法及系统
KR101928666B1 (ko) * 2017-10-11 2018-12-12 한양대학교 산학협력단 산 처리를 포함하는 전도성 고분자 패턴의 제조 방법
CN111224020A (zh) * 2020-01-14 2020-06-02 吉林建筑大学 一种基于喷墨融合的薄膜电极材料沉积方法
US11063164B1 (en) * 2020-09-17 2021-07-13 Allen Howard Engel Method and materials to manufacture heterojunctions, diodes, and solar cells
CN114334617B (zh) * 2022-01-11 2022-09-09 南京邮电大学 一种用于基材上有机层光刻图案化的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132248A (en) * 1988-05-31 1992-07-21 The United States Of America As Represented By The United States Department Of Energy Direct write with microelectronic circuit fabrication
WO1993019679A1 (en) * 1992-04-07 1993-10-14 The Johns Hopkins University A percutaneous mechanical fragmentation catheter system
DE69738794D1 (de) * 1996-02-08 2008-08-14 Canon Kk Verfahren zur Herstellung einer elektronenemittierende Vorrichtung, einer Elektronenquelle und eines Bilderzeugungsgerätes und Verfahren zur Überprüfung der Herstellung
EP1003078A3 (en) * 1998-11-17 2001-11-07 Corning Incorporated Replicating a nanoscale pattern
DE60033012T2 (de) 1999-09-10 2007-09-13 Koninklijke Philips Electronics N.V. Leitende struktur basierend auf poly-3,4-alkendioxythiophen (pedot) und polystyrolsulfonsäure (pss)
TW490997B (en) * 2000-03-31 2002-06-11 Seiko Epson Corp Method of manufacturing organic EL element, and organic EL element
TW554405B (en) * 2000-12-22 2003-09-21 Seiko Epson Corp Pattern generation method and apparatus
GB2373095A (en) * 2001-03-09 2002-09-11 Seiko Epson Corp Patterning substrates with evaporation residues
US7455955B2 (en) 2002-02-27 2008-11-25 Brewer Science Inc. Planarization method for multi-layer lithography processing
JP2004031933A (ja) 2002-05-09 2004-01-29 Konica Minolta Holdings Inc 有機薄膜トランジスタの製造方法及び、それにより製造された有機薄膜トランジスタと有機薄膜トランジスタシート
US7332369B2 (en) * 2002-08-06 2008-02-19 Merck Patent Gmbh Organic electronic devices

Also Published As

Publication number Publication date
CN1693993A (zh) 2005-11-09
GB2413895A (en) 2005-11-09
EP1594178A2 (en) 2005-11-09
KR20060047389A (ko) 2006-05-18
US7271098B2 (en) 2007-09-18
US20050250244A1 (en) 2005-11-10
GB0410236D0 (en) 2004-06-09
KR100691706B1 (ko) 2007-03-09
JP2005354044A (ja) 2005-12-22

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