JP4045245B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4045245B2 JP4045245B2 JP2004034383A JP2004034383A JP4045245B2 JP 4045245 B2 JP4045245 B2 JP 4045245B2 JP 2004034383 A JP2004034383 A JP 2004034383A JP 2004034383 A JP2004034383 A JP 2004034383A JP 4045245 B2 JP4045245 B2 JP 4045245B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- silicide
- silicon
- semiconductor substrate
- cobalt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 55
- 229910021332 silicide Inorganic materials 0.000 claims description 104
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 104
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 103
- 229910052710 silicon Inorganic materials 0.000 claims description 103
- 239000010703 silicon Substances 0.000 claims description 103
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 62
- 229910017052 cobalt Inorganic materials 0.000 claims description 61
- 239000010941 cobalt Substances 0.000 claims description 61
- 230000015654 memory Effects 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 55
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 41
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 41
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 36
- 239000000470 constituent Substances 0.000 claims description 36
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 22
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical group [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 22
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 19
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 19
- 229910052759 nickel Inorganic materials 0.000 claims description 17
- 238000004891 communication Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 description 26
- 239000012535 impurity Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000329 molecular dynamics simulation Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
- H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004034383A JP4045245B2 (ja) | 2004-02-12 | 2004-02-12 | 半導体装置 |
| US10/975,448 US20050179133A1 (en) | 2004-02-12 | 2004-10-29 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004034383A JP4045245B2 (ja) | 2004-02-12 | 2004-02-12 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005228841A JP2005228841A (ja) | 2005-08-25 |
| JP2005228841A5 JP2005228841A5 (enExample) | 2007-03-08 |
| JP4045245B2 true JP4045245B2 (ja) | 2008-02-13 |
Family
ID=34836174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004034383A Expired - Fee Related JP4045245B2 (ja) | 2004-02-12 | 2004-02-12 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20050179133A1 (enExample) |
| JP (1) | JP4045245B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008021668A (ja) * | 2006-07-10 | 2008-01-31 | Renesas Technology Corp | 相変化型不揮発性メモリおよびその製造方法 |
| KR101481400B1 (ko) | 2006-10-24 | 2015-01-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 저장 디바이스를 포함하는 반도체 디바이스와 이를 구동하기 위한 방법 |
| JP5214213B2 (ja) * | 2006-10-24 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 記憶装置の駆動方法 |
| US7872898B2 (en) * | 2009-04-15 | 2011-01-18 | Ememory Technology Inc. | One time programmable read only memory and programming method thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63152148A (ja) * | 1986-12-16 | 1988-06-24 | Sharp Corp | 半導体素子 |
| US5701027A (en) * | 1991-04-26 | 1997-12-23 | Quicklogic Corporation | Programmable interconnect structures and programmable integrated circuits |
| JP3501416B2 (ja) * | 1994-04-28 | 2004-03-02 | 忠弘 大見 | 半導体装置 |
| JP3732098B2 (ja) * | 2001-02-19 | 2006-01-05 | 株式会社ルネサステクノロジ | 半導体装置 |
| DE10121240C1 (de) * | 2001-04-30 | 2002-06-27 | Infineon Technologies Ag | Verfahren zur Herstellung für eine integrierte Schaltung, insbesondere eine Anti-Fuse, und entsprechende integrierte Schaltung |
| US7358578B2 (en) * | 2001-05-22 | 2008-04-15 | Renesas Technology Corporation | Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring |
| JP4124743B2 (ja) * | 2004-01-21 | 2008-07-23 | 株式会社ルネサステクノロジ | 相変化メモリ |
| JP4466315B2 (ja) * | 2004-10-21 | 2010-05-26 | 株式会社日立製作所 | 相変化メモリ |
-
2004
- 2004-02-12 JP JP2004034383A patent/JP4045245B2/ja not_active Expired - Fee Related
- 2004-10-29 US US10/975,448 patent/US20050179133A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20050179133A1 (en) | 2005-08-18 |
| JP2005228841A (ja) | 2005-08-25 |
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