JP4045245B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4045245B2
JP4045245B2 JP2004034383A JP2004034383A JP4045245B2 JP 4045245 B2 JP4045245 B2 JP 4045245B2 JP 2004034383 A JP2004034383 A JP 2004034383A JP 2004034383 A JP2004034383 A JP 2004034383A JP 4045245 B2 JP4045245 B2 JP 4045245B2
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JP
Japan
Prior art keywords
electrode
silicide
silicon
semiconductor substrate
cobalt
Prior art date
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Expired - Fee Related
Application number
JP2004034383A
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English (en)
Japanese (ja)
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JP2005228841A (ja
JP2005228841A5 (enExample
Inventor
富生 岩▲崎▼
浩志 守谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2004034383A priority Critical patent/JP4045245B2/ja
Priority to US10/975,448 priority patent/US20050179133A1/en
Publication of JP2005228841A publication Critical patent/JP2005228841A/ja
Publication of JP2005228841A5 publication Critical patent/JP2005228841A5/ja
Application granted granted Critical
Publication of JP4045245B2 publication Critical patent/JP4045245B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links

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  • Semiconductor Memories (AREA)
JP2004034383A 2004-02-12 2004-02-12 半導体装置 Expired - Fee Related JP4045245B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004034383A JP4045245B2 (ja) 2004-02-12 2004-02-12 半導体装置
US10/975,448 US20050179133A1 (en) 2004-02-12 2004-10-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004034383A JP4045245B2 (ja) 2004-02-12 2004-02-12 半導体装置

Publications (3)

Publication Number Publication Date
JP2005228841A JP2005228841A (ja) 2005-08-25
JP2005228841A5 JP2005228841A5 (enExample) 2007-03-08
JP4045245B2 true JP4045245B2 (ja) 2008-02-13

Family

ID=34836174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004034383A Expired - Fee Related JP4045245B2 (ja) 2004-02-12 2004-02-12 半導体装置

Country Status (2)

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US (1) US20050179133A1 (enExample)
JP (1) JP4045245B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008021668A (ja) * 2006-07-10 2008-01-31 Renesas Technology Corp 相変化型不揮発性メモリおよびその製造方法
JP5214213B2 (ja) * 2006-10-24 2013-06-19 株式会社半導体エネルギー研究所 記憶装置の駆動方法
WO2008050880A1 (en) * 2006-10-24 2008-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including storage device and method for driving the same
US7872898B2 (en) * 2009-04-15 2011-01-18 Ememory Technology Inc. One time programmable read only memory and programming method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63152148A (ja) * 1986-12-16 1988-06-24 Sharp Corp 半導体素子
US5701027A (en) * 1991-04-26 1997-12-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
JP3501416B2 (ja) * 1994-04-28 2004-03-02 忠弘 大見 半導体装置
JP3732098B2 (ja) * 2001-02-19 2006-01-05 株式会社ルネサステクノロジ 半導体装置
DE10121240C1 (de) * 2001-04-30 2002-06-27 Infineon Technologies Ag Verfahren zur Herstellung für eine integrierte Schaltung, insbesondere eine Anti-Fuse, und entsprechende integrierte Schaltung
US7358578B2 (en) * 2001-05-22 2008-04-15 Renesas Technology Corporation Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring
JP4124743B2 (ja) * 2004-01-21 2008-07-23 株式会社ルネサステクノロジ 相変化メモリ
JP4466315B2 (ja) * 2004-10-21 2010-05-26 株式会社日立製作所 相変化メモリ

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Publication number Publication date
JP2005228841A (ja) 2005-08-25
US20050179133A1 (en) 2005-08-18

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