JP4007582B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP4007582B2
JP4007582B2 JP2002126433A JP2002126433A JP4007582B2 JP 4007582 B2 JP4007582 B2 JP 4007582B2 JP 2002126433 A JP2002126433 A JP 2002126433A JP 2002126433 A JP2002126433 A JP 2002126433A JP 4007582 B2 JP4007582 B2 JP 4007582B2
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JP
Japan
Prior art keywords
group
acid
substituent
atom
action
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002126433A
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English (en)
Japanese (ja)
Other versions
JP2003316007A (ja
JP2003316007A5 (enExample
Inventor
佐々木知也
一良 水谷
慎一 漢那
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2002126433A priority Critical patent/JP4007582B2/ja
Priority to KR1020030026279A priority patent/KR100955006B1/ko
Priority to US10/422,789 priority patent/US7198880B2/en
Publication of JP2003316007A publication Critical patent/JP2003316007A/ja
Publication of JP2003316007A5 publication Critical patent/JP2003316007A5/ja
Application granted granted Critical
Publication of JP4007582B2 publication Critical patent/JP4007582B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2002126433A 2002-04-26 2002-04-26 ポジ型レジスト組成物 Expired - Fee Related JP4007582B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002126433A JP4007582B2 (ja) 2002-04-26 2002-04-26 ポジ型レジスト組成物
KR1020030026279A KR100955006B1 (ko) 2002-04-26 2003-04-25 포지티브 레지스트 조성물
US10/422,789 US7198880B2 (en) 2002-04-26 2003-04-25 Positive resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002126433A JP4007582B2 (ja) 2002-04-26 2002-04-26 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2003316007A JP2003316007A (ja) 2003-11-06
JP2003316007A5 JP2003316007A5 (enExample) 2005-09-22
JP4007582B2 true JP4007582B2 (ja) 2007-11-14

Family

ID=29540847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002126433A Expired - Fee Related JP4007582B2 (ja) 2002-04-26 2002-04-26 ポジ型レジスト組成物

Country Status (1)

Country Link
JP (1) JP4007582B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4494161B2 (ja) * 2004-10-14 2010-06-30 東京応化工業株式会社 高分子化合物、ポジ型レジスト組成物およびレジストパターン形成方法
US7537879B2 (en) * 2004-11-22 2009-05-26 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof
JP4562537B2 (ja) * 2005-01-28 2010-10-13 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP4524207B2 (ja) * 2005-03-02 2010-08-11 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JPWO2009087981A1 (ja) * 2008-01-11 2011-05-26 株式会社Kri 重合性化合物及びこの製造方法
JP5117484B2 (ja) * 2009-12-28 2013-01-16 東京応化工業株式会社 新規な化合物、及びその製造方法
JP6134603B2 (ja) * 2013-08-02 2017-05-24 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
JP6152804B2 (ja) * 2014-01-29 2017-06-28 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、重合体及び化合物
WO2016158711A1 (ja) 2015-03-31 2016-10-06 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法

Also Published As

Publication number Publication date
JP2003316007A (ja) 2003-11-06

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