JP4006023B2 - 集積回路 - Google Patents
集積回路 Download PDFInfo
- Publication number
- JP4006023B2 JP4006023B2 JP50615297A JP50615297A JP4006023B2 JP 4006023 B2 JP4006023 B2 JP 4006023B2 JP 50615297 A JP50615297 A JP 50615297A JP 50615297 A JP50615297 A JP 50615297A JP 4006023 B2 JP4006023 B2 JP 4006023B2
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- esd protection
- predetermined length
- protection structure
- insulating region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003071 parasitic effect Effects 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19526566.1 | 1995-07-20 | ||
| DE19526566 | 1995-07-20 | ||
| PCT/DE1996/001258 WO1997004484A1 (de) | 1995-07-20 | 1996-07-11 | Integrierte schaltung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11509371A JPH11509371A (ja) | 1999-08-17 |
| JP4006023B2 true JP4006023B2 (ja) | 2007-11-14 |
Family
ID=7767368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50615297A Expired - Lifetime JP4006023B2 (ja) | 1995-07-20 | 1996-07-11 | 集積回路 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0839389B1 (enExample) |
| JP (1) | JP4006023B2 (enExample) |
| KR (1) | KR100308074B1 (enExample) |
| DE (1) | DE59608801D1 (enExample) |
| TW (1) | TW308733B (enExample) |
| WO (1) | WO1997004484A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10217935B4 (de) * | 2001-04-23 | 2007-06-28 | Fuji Electric Co., Ltd., Kawasaki | Halbleiterbauteil |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4734752A (en) * | 1985-09-27 | 1988-03-29 | Advanced Micro Devices, Inc. | Electrostatic discharge protection device for CMOS integrated circuit outputs |
| JPH065749B2 (ja) * | 1986-05-22 | 1994-01-19 | 日本電気株式会社 | 半導体装置 |
| KR940004449B1 (ko) * | 1990-03-02 | 1994-05-25 | 가부시키가이샤 도시바 | 반도체장치 |
-
1996
- 1996-06-11 TW TW085107004A patent/TW308733B/zh not_active IP Right Cessation
- 1996-07-11 DE DE59608801T patent/DE59608801D1/de not_active Expired - Lifetime
- 1996-07-11 JP JP50615297A patent/JP4006023B2/ja not_active Expired - Lifetime
- 1996-07-11 WO PCT/DE1996/001258 patent/WO1997004484A1/de not_active Ceased
- 1996-07-11 KR KR1019980700272A patent/KR100308074B1/ko not_active Expired - Lifetime
- 1996-07-11 EP EP96923832A patent/EP0839389B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TW308733B (enExample) | 1997-06-21 |
| EP0839389B1 (de) | 2002-02-27 |
| DE59608801D1 (de) | 2002-04-04 |
| KR100308074B1 (ko) | 2001-11-17 |
| EP0839389A1 (de) | 1998-05-06 |
| JPH11509371A (ja) | 1999-08-17 |
| KR19990028970A (ko) | 1999-04-15 |
| WO1997004484A1 (de) | 1997-02-06 |
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