JP4006023B2 - 集積回路 - Google Patents

集積回路 Download PDF

Info

Publication number
JP4006023B2
JP4006023B2 JP50615297A JP50615297A JP4006023B2 JP 4006023 B2 JP4006023 B2 JP 4006023B2 JP 50615297 A JP50615297 A JP 50615297A JP 50615297 A JP50615297 A JP 50615297A JP 4006023 B2 JP4006023 B2 JP 4006023B2
Authority
JP
Japan
Prior art keywords
integrated circuit
esd protection
predetermined length
protection structure
insulating region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP50615297A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11509371A (ja
Inventor
ヘベカー、ハインツ
レクツエク、ウエルナー
サヴイニアク、ドミニク
テレツキ、ハルトムート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPH11509371A publication Critical patent/JPH11509371A/ja
Application granted granted Critical
Publication of JP4006023B2 publication Critical patent/JP4006023B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP50615297A 1995-07-20 1996-07-11 集積回路 Expired - Lifetime JP4006023B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19526566.1 1995-07-20
DE19526566 1995-07-20
PCT/DE1996/001258 WO1997004484A1 (de) 1995-07-20 1996-07-11 Integrierte schaltung

Publications (2)

Publication Number Publication Date
JPH11509371A JPH11509371A (ja) 1999-08-17
JP4006023B2 true JP4006023B2 (ja) 2007-11-14

Family

ID=7767368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50615297A Expired - Lifetime JP4006023B2 (ja) 1995-07-20 1996-07-11 集積回路

Country Status (6)

Country Link
EP (1) EP0839389B1 (enExample)
JP (1) JP4006023B2 (enExample)
KR (1) KR100308074B1 (enExample)
DE (1) DE59608801D1 (enExample)
TW (1) TW308733B (enExample)
WO (1) WO1997004484A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10217935B4 (de) * 2001-04-23 2007-06-28 Fuji Electric Co., Ltd., Kawasaki Halbleiterbauteil

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4734752A (en) * 1985-09-27 1988-03-29 Advanced Micro Devices, Inc. Electrostatic discharge protection device for CMOS integrated circuit outputs
JPH065749B2 (ja) * 1986-05-22 1994-01-19 日本電気株式会社 半導体装置
KR940004449B1 (ko) * 1990-03-02 1994-05-25 가부시키가이샤 도시바 반도체장치

Also Published As

Publication number Publication date
TW308733B (enExample) 1997-06-21
EP0839389B1 (de) 2002-02-27
DE59608801D1 (de) 2002-04-04
KR100308074B1 (ko) 2001-11-17
EP0839389A1 (de) 1998-05-06
JPH11509371A (ja) 1999-08-17
KR19990028970A (ko) 1999-04-15
WO1997004484A1 (de) 1997-02-06

Similar Documents

Publication Publication Date Title
JP4017187B2 (ja) 静電放電保護回路
JP3144330B2 (ja) 半導体装置
EP0242383B1 (en) Protection of igfet integrated circuits from electrostatic discharge
JP5546191B2 (ja) 半導体装置
US6670678B2 (en) Semiconductor device having ESD protective transistor
US20110163384A1 (en) Semiconductor device
EP0253105A1 (en) Integrated circuit with improved protective device
KR100387189B1 (ko) 절연체상반도체장치및그보호회로
KR100335527B1 (ko) 정전보호회로로서형성되는반도체소자
US4990984A (en) Semiconductor device having protective element
US4922316A (en) Infant protection device
JP4006023B2 (ja) 集積回路
US5963779A (en) Integrated circuit using a back gate voltage for burn-in operations
US4727405A (en) Protective network
KR0165897B1 (ko) Mos 소자용 과전압 보호회로
EP0198468A2 (en) Protective device for integrated circuit
JP2611639B2 (ja) 半導体装置
US6597021B2 (en) Protection circuit and semiconductor device
US5929491A (en) Integrated circuit with ESD protection
JPH0821630B2 (ja) 半導体装置
KR100591125B1 (ko) 정전기적 방전으로부터의 보호를 위한 게이트 접지 엔모스트랜지스터
JP2990736B2 (ja) 半導体入出力保護回路
JP3017083B2 (ja) 入出力保護回路
US6445601B1 (en) Electrostatic discharge protection circuit
KR101369194B1 (ko) 반도체 집적회로의 esd 보호회로

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070109

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070406

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070605

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070615

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070731

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070827

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100831

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110831

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110831

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120831

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120831

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130831

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

EXPY Cancellation because of completion of term