JP3987246B2 - 露光用マスク及び半導体装置の製造方法 - Google Patents

露光用マスク及び半導体装置の製造方法 Download PDF

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Publication number
JP3987246B2
JP3987246B2 JP26366599A JP26366599A JP3987246B2 JP 3987246 B2 JP3987246 B2 JP 3987246B2 JP 26366599 A JP26366599 A JP 26366599A JP 26366599 A JP26366599 A JP 26366599A JP 3987246 B2 JP3987246 B2 JP 3987246B2
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JP
Japan
Prior art keywords
pattern
resist
exposure
reticle
transferred
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Expired - Fee Related
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JP26366599A
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English (en)
Japanese (ja)
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JP2001092105A (ja
JP2001092105A5 (enExample
Inventor
大輔 河村
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Toshiba Corp
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Toshiba Corp
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Publication date
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Priority to JP26366599A priority Critical patent/JP3987246B2/ja
Priority to US09/661,553 priority patent/US6558853B1/en
Publication of JP2001092105A publication Critical patent/JP2001092105A/ja
Publication of JP2001092105A5 publication Critical patent/JP2001092105A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP26366599A 1999-09-17 1999-09-17 露光用マスク及び半導体装置の製造方法 Expired - Fee Related JP3987246B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP26366599A JP3987246B2 (ja) 1999-09-17 1999-09-17 露光用マスク及び半導体装置の製造方法
US09/661,553 US6558853B1 (en) 1999-09-17 2000-09-14 Method for manufacturing exposure mask, exposure apparatus and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26366599A JP3987246B2 (ja) 1999-09-17 1999-09-17 露光用マスク及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001092105A JP2001092105A (ja) 2001-04-06
JP2001092105A5 JP2001092105A5 (enExample) 2005-06-30
JP3987246B2 true JP3987246B2 (ja) 2007-10-03

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ID=17392644

Family Applications (1)

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JP26366599A Expired - Fee Related JP3987246B2 (ja) 1999-09-17 1999-09-17 露光用マスク及び半導体装置の製造方法

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Country Link
US (1) US6558853B1 (enExample)
JP (1) JP3987246B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040058550A1 (en) * 2002-09-19 2004-03-25 Infineon Technologies North America Corp. Dummy patterns for reducing proximity effects and method of using same
DE10310136B4 (de) * 2003-03-07 2007-05-03 Infineon Technologies Ag Maskensatz zur Projektion von jeweils auf den Masken des Satzes angeordneten und aufeinander abgestimmten Strukturmustern auf einen Halbleiterwafer
DE10310137B4 (de) * 2003-03-07 2010-08-19 Qimonda Ag Satz von wenigstens zwei Masken zur Projektion von jeweils auf den Masken gebildeten und aufeinander abgestimmten Strukturmustern und Verfahren zur Herstellung der Masken
TWI235415B (en) * 2003-12-17 2005-07-01 Macronix Int Co Ltd Method and device for improving uniformity of critical dimension between different patterns of semiconductor devices
SG170805A1 (en) * 2006-02-09 2011-05-30 Kla Tencor Tech Corp Methods and systems for determining a characteristic of a wafer
CN101479730B (zh) * 2006-06-27 2011-06-08 日本电气株式会社 基板或电子部件的翘曲分析方法、基板或电子部件的翘曲分析系统及基板或电子部件的翘曲分析程序
US7858269B2 (en) * 2007-03-16 2010-12-28 International Business Machines Corporation Structure and method for sub-resolution dummy clear shapes for improved gate dimensional control
JP4914272B2 (ja) * 2007-04-02 2012-04-11 エルピーダメモリ株式会社 投影露光用のレチクル、該投影露光用のレチクルの製造方法及び該レチクルを用いた半導体装置
US7912658B2 (en) * 2008-05-28 2011-03-22 Kla-Tencor Corp. Systems and methods for determining two or more characteristics of a wafer
WO2009155502A2 (en) * 2008-06-19 2009-12-23 Kla-Tencor Corporation Computer-implemented methods, computer-readable media, and systems for determining one or more characteristics of a wafer
US8269960B2 (en) * 2008-07-24 2012-09-18 Kla-Tencor Corp. Computer-implemented methods for inspecting and/or classifying a wafer
JP5356114B2 (ja) * 2009-05-29 2013-12-04 株式会社東芝 露光用マスク及び半導体装置の製造方法
JP2012022036A (ja) * 2010-07-12 2012-02-02 Toshiba Corp 露光用マスクおよび半導体装置の製造方法
US9594862B2 (en) * 2014-06-20 2017-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating an integrated circuit with non-printable dummy features
JP6414399B2 (ja) * 2014-07-03 2018-10-31 富士通セミコンダクター株式会社 レチクル及びその検査方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08234410A (ja) 1995-02-28 1996-09-13 Dainippon Printing Co Ltd 位相シフトフォトマスク及び位相シフトフォトマスクドライエッチング方法
JP3080024B2 (ja) * 1997-02-20 2000-08-21 日本電気株式会社 露光方法および球面収差量の測定方法
US6001512A (en) * 1998-04-28 1999-12-14 Taiwan Semiconductor Manufacturing Company Ltd. Method of blind border pattern layout for attenuated phase shifting masks

Also Published As

Publication number Publication date
JP2001092105A (ja) 2001-04-06
US6558853B1 (en) 2003-05-06

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