JP3986036B2 - 半導体集積回路装置 - Google Patents
半導体集積回路装置 Download PDFInfo
- Publication number
- JP3986036B2 JP3986036B2 JP10891599A JP10891599A JP3986036B2 JP 3986036 B2 JP3986036 B2 JP 3986036B2 JP 10891599 A JP10891599 A JP 10891599A JP 10891599 A JP10891599 A JP 10891599A JP 3986036 B2 JP3986036 B2 JP 3986036B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- drain
- nmos transistor
- source
- selector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/1733—Controllable logic circuits
- H03K19/1737—Controllable logic circuits using multiplexers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10891599A JP3986036B2 (ja) | 1999-04-16 | 1999-04-16 | 半導体集積回路装置 |
| US09/549,711 US6356118B1 (en) | 1999-04-16 | 2000-04-14 | Semiconductor integrated circuit device |
| TW089106998A TW494568B (en) | 1999-04-16 | 2000-04-14 | Semiconductor integrated circuit device |
| KR1020000019771A KR100713765B1 (ko) | 1999-04-16 | 2000-04-15 | 반도체 집적 회로 장치 |
| US10/052,251 US6690206B2 (en) | 1999-04-16 | 2002-01-23 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10891599A JP3986036B2 (ja) | 1999-04-16 | 1999-04-16 | 半導体集積回路装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000299385A JP2000299385A (ja) | 2000-10-24 |
| JP2000299385A5 JP2000299385A5 (enExample) | 2004-09-16 |
| JP3986036B2 true JP3986036B2 (ja) | 2007-10-03 |
Family
ID=14496881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10891599A Expired - Lifetime JP3986036B2 (ja) | 1999-04-16 | 1999-04-16 | 半導体集積回路装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6356118B1 (enExample) |
| JP (1) | JP3986036B2 (enExample) |
| KR (1) | KR100713765B1 (enExample) |
| TW (1) | TW494568B (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3555080B2 (ja) * | 2000-10-19 | 2004-08-18 | Necエレクトロニクス株式会社 | 汎用ロジックモジュール及びこれを用いたセル |
| US6779158B2 (en) * | 2001-06-15 | 2004-08-17 | Science & Technology Corporation @ Unm | Digital logic optimization using selection operators |
| JP4156864B2 (ja) * | 2002-05-17 | 2008-09-24 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| JP2003338750A (ja) * | 2002-05-20 | 2003-11-28 | Nec Electronics Corp | 汎用ロジックセル、これを用いた汎用ロジックセルアレイ、及びこの汎用ロジックセルアレイを用いたasic |
| DE102004007398B4 (de) * | 2004-02-16 | 2007-10-18 | Infineon Technologies Ag | Konfigurierbare Gate-Array-Zelle mit erweiterter Gate-Elektrode |
| US9230910B2 (en) | 2006-03-09 | 2016-01-05 | Tela Innovations, Inc. | Oversized contacts and vias in layout defined by linearly constrained topology |
| US8653857B2 (en) | 2006-03-09 | 2014-02-18 | Tela Innovations, Inc. | Circuitry and layouts for XOR and XNOR logic |
| US7763534B2 (en) | 2007-10-26 | 2010-07-27 | Tela Innovations, Inc. | Methods, structures and designs for self-aligning local interconnects used in integrated circuits |
| US8541879B2 (en) | 2007-12-13 | 2013-09-24 | Tela Innovations, Inc. | Super-self-aligned contacts and method for making the same |
| US8658542B2 (en) | 2006-03-09 | 2014-02-25 | Tela Innovations, Inc. | Coarse grid design methods and structures |
| US8448102B2 (en) | 2006-03-09 | 2013-05-21 | Tela Innovations, Inc. | Optimizing layout of irregular structures in regular layout context |
| US9035359B2 (en) | 2006-03-09 | 2015-05-19 | Tela Innovations, Inc. | Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods |
| US7446352B2 (en) | 2006-03-09 | 2008-11-04 | Tela Innovations, Inc. | Dynamic array architecture |
| US9009641B2 (en) | 2006-03-09 | 2015-04-14 | Tela Innovations, Inc. | Circuits with linear finfet structures |
| US9563733B2 (en) | 2009-05-06 | 2017-02-07 | Tela Innovations, Inc. | Cell circuit and layout with linear finfet structures |
| US7956421B2 (en) | 2008-03-13 | 2011-06-07 | Tela Innovations, Inc. | Cross-coupled transistor layouts in restricted gate level layout architecture |
| US8839175B2 (en) | 2006-03-09 | 2014-09-16 | Tela Innovations, Inc. | Scalable meta-data objects |
| US8667443B2 (en) | 2007-03-05 | 2014-03-04 | Tela Innovations, Inc. | Integrated circuit cell library for multiple patterning |
| US7888705B2 (en) | 2007-08-02 | 2011-02-15 | Tela Innovations, Inc. | Methods for defining dynamic array section with manufacturing assurance halo and apparatus implementing the same |
| US8453094B2 (en) | 2008-01-31 | 2013-05-28 | Tela Innovations, Inc. | Enforcement of semiconductor structure regularity for localized transistors and interconnect |
| US7939443B2 (en) | 2008-03-27 | 2011-05-10 | Tela Innovations, Inc. | Methods for multi-wire routing and apparatus implementing same |
| MY152456A (en) | 2008-07-16 | 2014-09-30 | Tela Innovations Inc | Methods for cell phasing and placement in dynamic array architecture and implementation of the same |
| US9122832B2 (en) | 2008-08-01 | 2015-09-01 | Tela Innovations, Inc. | Methods for controlling microloading variation in semiconductor wafer layout and fabrication |
| WO2010122754A1 (ja) * | 2009-04-22 | 2010-10-28 | パナソニック株式会社 | 半導体集積回路 |
| US8661392B2 (en) | 2009-10-13 | 2014-02-25 | Tela Innovations, Inc. | Methods for cell boundary encroachment and layouts implementing the Same |
| US9159627B2 (en) | 2010-11-12 | 2015-10-13 | Tela Innovations, Inc. | Methods for linewidth modification and apparatus implementing the same |
| US11062739B2 (en) * | 2019-06-27 | 2021-07-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor chip having memory and logic cells |
| CN112908987B (zh) * | 2021-03-22 | 2025-06-27 | 西安紫光国芯半导体股份有限公司 | 三维集成电路及其制造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200907A (en) * | 1990-04-16 | 1993-04-06 | Tran Dzung J | Transmission gate logic design method |
| US5079614A (en) * | 1990-09-26 | 1992-01-07 | S-Mos Systems, Inc. | Gate array architecture with basic cell interleaved gate electrodes |
| US5162666A (en) | 1991-03-15 | 1992-11-10 | Tran Dzung J | Transmission gate series multiplexer |
| JP3144967B2 (ja) | 1993-11-08 | 2001-03-12 | 株式会社日立製作所 | 半導体集積回路およびその製造方法 |
| JP3072887B2 (ja) * | 1995-12-11 | 2000-08-07 | 川崎製鉄株式会社 | フィールドプログラマブルゲートアレイ |
| US6097221A (en) * | 1995-12-11 | 2000-08-01 | Kawasaki Steel Corporation | Semiconductor integrated circuit capable of realizing logic functions |
| JP3072888B2 (ja) * | 1995-12-14 | 2000-08-07 | 川崎製鉄株式会社 | フィールドプログラマブルゲートアレイ |
| US5955912A (en) * | 1995-10-25 | 1999-09-21 | Texas Instruments Incorporated | Multiplexer circuits |
| KR100439527B1 (ko) * | 1997-04-11 | 2004-07-12 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체집적회로 |
| KR100278275B1 (ko) * | 1997-06-30 | 2001-01-15 | 김영환 | 저전력-고속스택틱캐스코드회로 |
-
1999
- 1999-04-16 JP JP10891599A patent/JP3986036B2/ja not_active Expired - Lifetime
-
2000
- 2000-04-14 US US09/549,711 patent/US6356118B1/en not_active Expired - Fee Related
- 2000-04-14 TW TW089106998A patent/TW494568B/zh not_active IP Right Cessation
- 2000-04-15 KR KR1020000019771A patent/KR100713765B1/ko not_active Expired - Fee Related
-
2002
- 2002-01-23 US US10/052,251 patent/US6690206B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100713765B1 (ko) | 2007-05-07 |
| US20020063582A1 (en) | 2002-05-30 |
| JP2000299385A (ja) | 2000-10-24 |
| US6356118B1 (en) | 2002-03-12 |
| TW494568B (en) | 2002-07-11 |
| KR20010006984A (ko) | 2001-01-26 |
| US6690206B2 (en) | 2004-02-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3986036B2 (ja) | 半導体集積回路装置 | |
| KR100796215B1 (ko) | 반도체 집적회로장치 | |
| US5493135A (en) | Symmetrical multi-layer metal logic array with continuous substrate taps and extension portions for increased gate density | |
| US4541067A (en) | Combinational logic structure using PASS transistors | |
| US5923060A (en) | Reduced area gate array cell design based on shifted placement of alternate rows of cells | |
| KR100511808B1 (ko) | 반도체 집적회로장치 및 그 제조방법 | |
| US4622648A (en) | Combinational logic structure using PASS transistors | |
| JPH02303066A (ja) | マスタ・スライス集積回路 | |
| JP2000299385A5 (enExample) | ||
| US6552402B1 (en) | Composite MOS transistor device | |
| US5635737A (en) | Symmetrical multi-layer metal logic array with extension portions for increased gate density and a testability area | |
| KR950013740B1 (ko) | 반도체 집적 회로 | |
| JPH02263463A (ja) | 半導体集積回路 | |
| US5814846A (en) | Cell apparatus and method for use in building complex integrated circuit devices | |
| EP0092176B1 (en) | Basic cell for integrated-circuit gate arrays | |
| KR100310116B1 (ko) | 반도체집적회로장치 | |
| KR100439527B1 (ko) | 반도체집적회로 | |
| KR100416612B1 (ko) | 칩 면적을 최소화시키는 반도체 메모리 장치 | |
| JPH0154863B2 (enExample) | ||
| JP2761052B2 (ja) | スタンダードセルの配置方法 | |
| EP0817388A2 (en) | Logical circuit capable of uniformizing output delays for different inputs | |
| US20240079411A1 (en) | Layout structure, semiconductor structure and memory | |
| WO1992002957A1 (fr) | Dispositif semi-conducteur | |
| JPH06334042A (ja) | 半導体集積回路 | |
| JP2002158287A (ja) | 半導体集積回路 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20040407 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20041213 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20060512 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20060512 |
|
| A072 | Dismissal of procedure [no reply to invitation to correct request for examination] |
Free format text: JAPANESE INTERMEDIATE CODE: A073 Effective date: 20060912 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070424 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070601 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070626 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070709 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100720 Year of fee payment: 3 |