JP3985283B2 - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
JP3985283B2
JP3985283B2 JP963897A JP963897A JP3985283B2 JP 3985283 B2 JP3985283 B2 JP 3985283B2 JP 963897 A JP963897 A JP 963897A JP 963897 A JP963897 A JP 963897A JP 3985283 B2 JP3985283 B2 JP 3985283B2
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JP
Japan
Prior art keywords
layer
light emitting
doped
zinc
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP963897A
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English (en)
Japanese (ja)
Other versions
JPH10209573A (ja
JPH10209573A5 (enExample
Inventor
孝行 河角
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP963897A priority Critical patent/JP3985283B2/ja
Priority to US09/010,840 priority patent/US6233266B1/en
Publication of JPH10209573A publication Critical patent/JPH10209573A/ja
Publication of JPH10209573A5 publication Critical patent/JPH10209573A5/ja
Application granted granted Critical
Publication of JP3985283B2 publication Critical patent/JP3985283B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3218—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities specially strained cladding layers, other than for strain compensation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP963897A 1997-01-22 1997-01-22 発光素子 Expired - Fee Related JP3985283B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP963897A JP3985283B2 (ja) 1997-01-22 1997-01-22 発光素子
US09/010,840 US6233266B1 (en) 1997-01-22 1998-01-22 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP963897A JP3985283B2 (ja) 1997-01-22 1997-01-22 発光素子

Publications (3)

Publication Number Publication Date
JPH10209573A JPH10209573A (ja) 1998-08-07
JPH10209573A5 JPH10209573A5 (enExample) 2004-12-16
JP3985283B2 true JP3985283B2 (ja) 2007-10-03

Family

ID=11725781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP963897A Expired - Fee Related JP3985283B2 (ja) 1997-01-22 1997-01-22 発光素子

Country Status (2)

Country Link
US (1) US6233266B1 (enExample)
JP (1) JP3985283B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3692269B2 (ja) 1999-01-29 2005-09-07 シャープ株式会社 半導体レーザ素子及びその製造方法
EP1320158A1 (en) * 2001-12-13 2003-06-18 Agilent Technologies, Inc. (a Delaware corporation) Means of controlling dopant diffusion in a semiconductor heterostructure
DE10306311B4 (de) * 2002-08-22 2008-08-07 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Diffusionsstoppschicht
JP2004111923A (ja) 2002-08-22 2004-04-08 Osram Opto Semiconductors Gmbh ビーム放射性半導体構成素子
JP2005277372A (ja) * 2004-02-25 2005-10-06 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
JP2005294753A (ja) * 2004-04-05 2005-10-20 Toshiba Corp 半導体発光素子
US7672347B2 (en) * 2004-05-14 2010-03-02 Sony Corporation Semiconductor light emitting device
JP2005353654A (ja) * 2004-06-08 2005-12-22 Mitsubishi Electric Corp 半導体レーザ素子およびその製造方法
JP4534615B2 (ja) * 2004-06-16 2010-09-01 日立電線株式会社 レーザダイオード用エピタキシャルウェハ及びレーザダイオード
US20060165143A1 (en) * 2005-01-24 2006-07-27 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor laser device and manufacturing method thereof
JP2006229012A (ja) * 2005-02-18 2006-08-31 Mitsubishi Electric Corp 半導体レーザ素子
DE102005037022A1 (de) 2005-06-28 2007-01-04 Osram Opto Semiconductors Gmbh Strahlungsemittierender optoelektronischer Halbleiterchip mit einer Diffusionsbarriere
JP4483728B2 (ja) * 2005-07-19 2010-06-16 住友電気工業株式会社 半導体光デバイスの製造方法
JP2007066981A (ja) * 2005-08-29 2007-03-15 Toshiba Corp 半導体装置
KR100691623B1 (ko) 2006-02-07 2007-03-12 삼성전기주식회사 반도체 레이저 다이오드 및 그 제조 방법
KR100818269B1 (ko) * 2006-06-23 2008-04-01 삼성전자주식회사 질화물 반도체 발광소자
WO2009120044A2 (ko) * 2008-03-27 2009-10-01 Song June O 발광소자 및 그 제조방법
US20100308300A1 (en) * 2009-06-08 2010-12-09 Siphoton, Inc. Integrated circuit light emission device, module and fabrication process
TWI786248B (zh) 2018-12-26 2022-12-11 晶元光電股份有限公司 發光元件
CN114503382B (zh) * 2019-10-15 2024-03-26 三菱电机株式会社 半导体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69616237T2 (de) * 1995-06-16 2002-07-11 Uniphase Opto Holdings Inc., San Jose Halbleiter-laserdiode und deren herstellungsverfahren
JPH09270558A (ja) * 1996-03-29 1997-10-14 Fuji Photo Film Co Ltd 半導体レーザ
EP0814548B1 (en) * 1996-06-17 2003-10-29 Fuji Photo Film Co., Ltd. Semiconductor laser

Also Published As

Publication number Publication date
JPH10209573A (ja) 1998-08-07
US6233266B1 (en) 2001-05-15

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