JP3979849B2 - プラズマ処理装置および半導体装置の製造方法 - Google Patents

プラズマ処理装置および半導体装置の製造方法 Download PDF

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Publication number
JP3979849B2
JP3979849B2 JP2002003615A JP2002003615A JP3979849B2 JP 3979849 B2 JP3979849 B2 JP 3979849B2 JP 2002003615 A JP2002003615 A JP 2002003615A JP 2002003615 A JP2002003615 A JP 2002003615A JP 3979849 B2 JP3979849 B2 JP 3979849B2
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Japan
Prior art keywords
electrodes
substrate
processing
pair
chamber
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Expired - Lifetime
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JP2002003615A
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English (en)
Japanese (ja)
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JP2002280378A5 (enExample
JP2002280378A (ja
Inventor
一行 豊田
泰啓 井ノ口
基成 竹林
忠司 紺谷
信雄 石丸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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Priority to JP2002003615A priority Critical patent/JP3979849B2/ja
Application filed by Hitachi Kokusai Electric Inc, Kokusai Denki Electric Inc filed Critical Hitachi Kokusai Electric Inc
Publication of JP2002280378A publication Critical patent/JP2002280378A/ja
Priority to US10/339,639 priority patent/US20030164143A1/en
Publication of JP2002280378A5 publication Critical patent/JP2002280378A5/ja
Priority to US11/688,730 priority patent/US8028652B2/en
Application granted granted Critical
Publication of JP3979849B2 publication Critical patent/JP3979849B2/ja
Priority to US11/931,502 priority patent/US20080060580A1/en
Priority to US11/931,585 priority patent/US7861668B2/en
Priority to US11/931,386 priority patent/US20080093215A1/en
Priority to US12/357,213 priority patent/US8020514B2/en
Priority to US12/390,291 priority patent/US8544411B2/en
Priority to US13/674,753 priority patent/US9039912B2/en
Priority to US13/674,761 priority patent/US20130104804A1/en
Priority to US14/690,936 priority patent/US9373499B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Drying Of Semiconductors (AREA)
JP2002003615A 2001-01-11 2002-01-10 プラズマ処理装置および半導体装置の製造方法 Expired - Lifetime JP3979849B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2002003615A JP3979849B2 (ja) 2001-01-11 2002-01-10 プラズマ処理装置および半導体装置の製造方法
US10/339,639 US20030164143A1 (en) 2002-01-10 2003-01-09 Batch-type remote plasma processing apparatus
US11/688,730 US8028652B2 (en) 2002-01-10 2007-03-20 Batch-type remote plasma processing apparatus
US11/931,502 US20080060580A1 (en) 2002-01-10 2007-10-31 Batch-Type Remote Plasma Processing Apparatus
US11/931,585 US7861668B2 (en) 2002-01-10 2007-10-31 Batch-type remote plasma processing apparatus
US11/931,386 US20080093215A1 (en) 2002-01-10 2007-10-31 Batch-Type Remote Plasma Processing Apparatus
US12/357,213 US8020514B2 (en) 2002-01-10 2009-01-21 Batch-type remote plasma processing apparatus
US12/390,291 US8544411B2 (en) 2002-01-10 2009-02-20 Batch-type remote plasma processing apparatus
US13/674,761 US20130104804A1 (en) 2002-01-10 2012-11-12 Batch-Type Remote Plasma Processing Apparatus
US13/674,753 US9039912B2 (en) 2002-01-10 2012-11-12 Batch-type remote plasma processing apparatus
US14/690,936 US9373499B2 (en) 2002-01-10 2015-04-20 Batch-type remote plasma processing apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001003703 2001-01-11
JP2001-3703 2001-01-11
JP2002003615A JP3979849B2 (ja) 2001-01-11 2002-01-10 プラズマ処理装置および半導体装置の製造方法

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2004127760A Division JP4267506B2 (ja) 2001-01-11 2004-04-23 プラズマ処理装置
JP2006135355A Division JP4435111B2 (ja) 2001-01-11 2006-05-15 Ａｌｄ装置および半導体装置の製造方法
JP2006135356A Division JP4384645B2 (ja) 2001-01-11 2006-05-15 処理管

Publications (3)

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JP2002280378A JP2002280378A (ja) 2002-09-27
JP2002280378A5 JP2002280378A5 (enExample) 2005-03-03
JP3979849B2 true JP3979849B2 (ja) 2007-09-19

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Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100450286B1 (ko) * 2001-11-15 2004-10-15 국제엘렉트릭코리아 주식회사 플라즈마를 이용한 화학기상증착 장치
KR100837474B1 (ko) * 2003-03-04 2008-06-12 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리장치 및 디바이스의 제조방법
JP4329403B2 (ja) 2003-05-19 2009-09-09 東京エレクトロン株式会社 プラズマ処理装置
JP2005056908A (ja) * 2003-08-05 2005-03-03 Hitachi Kokusai Electric Inc 基板処理装置
JP4770145B2 (ja) 2003-10-07 2011-09-14 東京エレクトロン株式会社 成膜方法及び成膜装置
TWD104755S1 (zh) 2003-11-04 2005-05-21 東京威力科創股份有限公司 半導體製造裝置之處理管
JP4936497B2 (ja) * 2004-01-09 2012-05-23 株式会社日立国際電気 基板処理装置及び基板処理方法
JP4495471B2 (ja) * 2004-01-13 2010-07-07 三星電子株式会社 エッチング方法
JP4495472B2 (ja) * 2004-01-13 2010-07-07 三星電子株式会社 エッチング方法
JP4495470B2 (ja) * 2004-01-13 2010-07-07 三星電子株式会社 エッチング方法
JP4987219B2 (ja) * 2004-01-13 2012-07-25 三星電子株式会社 エッチング装置
JP4987220B2 (ja) * 2004-01-13 2012-07-25 三星電子株式会社 エッチング装置
WO2005083766A1 (ja) * 2004-02-27 2005-09-09 Hitachi Kokusai Electric Inc. 基板処理装置
JP4344886B2 (ja) * 2004-09-06 2009-10-14 東京エレクトロン株式会社 プラズマ処理装置
JP4951501B2 (ja) * 2005-03-01 2012-06-13 株式会社日立国際電気 基板処理装置および半導体デバイスの製造方法
WO2007129568A1 (ja) * 2006-05-01 2007-11-15 Hitachi Kokusai Electric Inc. 基板処理装置
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
US7632354B2 (en) 2006-08-08 2009-12-15 Tokyo Electron Limited Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing system
JP2008300444A (ja) * 2007-05-29 2008-12-11 Hitachi Kokusai Electric Inc 半導体製造装置
JP5098882B2 (ja) * 2007-08-31 2012-12-12 東京エレクトロン株式会社 プラズマ処理装置
US20090056877A1 (en) 2007-08-31 2009-03-05 Tokyo Electron Limited Plasma processing apparatus
EP2251898A4 (en) 2008-02-18 2013-05-22 Mitsui Shipbuilding Eng ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD
JP4814914B2 (ja) * 2008-07-07 2011-11-16 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5099101B2 (ja) * 2009-01-23 2012-12-12 東京エレクトロン株式会社 プラズマ処理装置
JP5490585B2 (ja) 2009-05-29 2014-05-14 株式会社日立国際電気 基板処理装置、基板処理方法および半導体装置の製造方法
JP6011420B2 (ja) 2013-03-29 2016-10-19 東京エレクトロン株式会社 縦型熱処理装置の運転方法、縦型熱処理装置及び記憶媒体
JP6113626B2 (ja) 2013-10-21 2017-04-12 東京エレクトロン株式会社 プラズマ処理装置
CN103887133B (zh) * 2014-04-01 2016-01-27 南京迪奥赛真空科技有限公司 一种磁场增强型线性大面积离子源
CN106467980B (zh) * 2015-08-21 2019-01-29 东莞市中镓半导体科技有限公司 一种大型垂直式hvpe反应室的装配辅助装置
CN105386122A (zh) * 2015-10-20 2016-03-09 中国电子科技集团公司第四十八研究所 硅外延反应室的进气调节组件及气流分布调节装置
JP6186022B2 (ja) * 2016-01-28 2017-08-23 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
KR102009348B1 (ko) * 2017-09-20 2019-08-09 주식회사 유진테크 배치식 플라즈마 기판처리장치
KR102139296B1 (ko) * 2019-05-02 2020-07-30 주식회사 유진테크 배치식 기판처리장치
KR102194604B1 (ko) 2019-05-02 2020-12-24 주식회사 유진테크 배치식 기판처리장치
JP7130014B2 (ja) * 2019-05-28 2022-09-02 東京エレクトロン株式会社 プラズマ処理装置
CN118497718A (zh) * 2023-02-14 2024-08-16 盛美半导体设备(上海)股份有限公司 用于等离子增强型薄膜沉积的炉管

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