JP3974574B2 - 疎水層供給方法及び該層を有するコンデンサ・マイクロフォン - Google Patents
疎水層供給方法及び該層を有するコンデンサ・マイクロフォン Download PDFInfo
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- JP3974574B2 JP3974574B2 JP2003501227A JP2003501227A JP3974574B2 JP 3974574 B2 JP3974574 B2 JP 3974574B2 JP 2003501227 A JP2003501227 A JP 2003501227A JP 2003501227 A JP2003501227 A JP 2003501227A JP 3974574 B2 JP3974574 B2 JP 3974574B2
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- diaphragm
- hydrophobic layer
- back electrode
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
Description
コンデンサ・マイクロフォンのダイアフラムと背面極との間のスティクションを回避するように、該コンデンサ・マイクロフォンのダイアフラムの少なくとも一部分と背面極の少なくとも一部分とに対して疎水層を備える方法であって、
前記ダイアフラムの内面は背面極の内面と共同してコンデンサを形成するコンデンサ・マイクロフォンを提供する段階と、
前記ダイアフラム及び前記背面極の各内面上に、前記背面極と前記ダイアフラムのどちらか一方に、又は、前記背面極と前記ダイアフラムの双方に設けられた複数の開口を介して、疎水層を供給する段階と、
を備えた方法、により満足される。
単分子層を形成する段階と、
前記単分子層の各分子間を架橋し、そして、前記各表面に対して前記単分子層を多数結合(multi binding)させる段階と、を備えている。
CnH2n+1C2H4SiX3;X=OCH3又はOCH2CH3又はClであり;n=1、2、3、・・・であり、
CnH2n+1C2H4SiX2Y;X=OCH3又はOCH2CH3又はClであり、Y=CmH2m+1であり、n=1、2、3、・・であり、;m=1、2、3、・・であり、又は、
CnH2n+1C2H4SiXY2;X=OCH3又はOCH2CH3又はClであり、Y=CmH2m+1であり、n=1、2、3、・・であり、m=1、2、3、・・であるようなアルキルシランを含む。
CnF2n+1C2H4SiX3;X=OCH3又はOCH2CH3又はClであり、n=1、2、3、・・であり、
CnF2n+1C2H4SiX2Y;X=OCH3又はOCH2CH3又はClであり、Y=CmH2m+1であり;n=1、2、3、・・であり;m=1、2、3、・・であり、又は、
CnF2n+1C2H4SiXY2;X=OCH3又はOCH2CH3又はClであり、Y=CmH2m+1であり、n=1、2、3、・・であり、m=1、2、3、・・であるような、例えば、過フルオロアルキルシランなどの過ハロアルキルシランを含む。
CnH2n+1C2H4SiX3;X=OCH3又はOCH2CH3又はClであり、n=1、2、3、・・であり、
CnH2n+1C2H4SiX2Y;X=OCH3又はOCH2CH3又はClであり、Y=CmH2m+1であり、n=1、2、3、・・であり、m=1、2、3、・・であり、又は、
CnH2n+1C2H4SiXY2;X=OCH3又はOCH2CH3又はClであり、Y=CmH2m+1であり、n=1、2、3、・・であり、m=1、2、3、・・であるようなアルキルシランを含む。
CnF2n+1C2H4SiX3;X=OCH3又はOCH2CH3又はClであり、n=1、2、3、・・であり、
CnF2n+1C2H4SiX2Y;X=OCH3又はOCH2CH3又はClであり、Y=CmH2m+1であり、n=1、2、3、・・であり、m=1、2、3、・・であり、又は、
CnF2n+1C2H4SiXY2;X=OCH3又はOCH2CH3又はClであり、Y=CmH2m+1であり、n=1、2、3、・・であり、m=1、2、3、・・である、例えば、過フルオロアルキルシランなどの過ハロアルキルシランを含む。
Claims (27)
- コンデンサ・マイクロフォンのダイアフラムと背面極との間のスティクションを回避すするように、該コンデンサ・マイクロフォンの前記ダイアフラムの少なくとも一部分及び前記背面極の少なくとも一部分に疎水層を備える方法であって、
前記ダイアフラムの内面が前記背面極の内面と共同してコンデンサを形成したコンデンサ・マイクロフォンを提供する段階と、
前記ダイアフラム及び前記背面極の各内面上に、前記背面極と前記ダイアフラムのどちらか一方に、又は、前記背面極と前記ダイアフラムの双方に設けられた複数の開口を通して、前記疎水層を供給する段階と、
を有する前記方法。 - 前記ダイアフラム及び前記背面極の各内面は、少なくとも、親水性材料で作成される請求項1に記載の前記方法。
- 前記疎水層を供給する段階は、各々の最小寸法が、10μmを超えない、例えば、5μmを超えず、1μmを超えず、0.5μmを超えない複数の開口を介して、前記疎水層を供給することで実施される請求項1又は2に記載の前記方法。
- 前記ダイアフラムと前記背面極との間の静的距離は、10μmより小さいものであり、例えば、5μmより小さく、1μmより小さく、0.5μmより小さく、0.3μmより小さいものである請求項1乃至3のいずれか一項に記載の前記方法。
- 前記疎水層を供給する段階は、ポリシリコン、シリコン酸化物、シリコン窒化物及び/又はシリコンリッチ・シリコン窒化物の表面に対して疎水層を化学結合し、前記疎水層により、前記結合が形成される表面から離れる方向に疎水鎖が形成されることで実施される請求項1乃至4のいずれか一項に記載の前記方法。
- 前記疎水層を供給する段階は、
単分子層を形成する段階と、
前記単分子層の各分子間を架橋し、前記各表面に対して前記単分子層を多数結合させる段階と、
を備える請求項1乃至4のいずれか一項に記載の前記方法。 - 前記疎水層の原料物質は、アルキルシランを含む請求項1乃至6のいずれか一項に記載の前記方法。
- 前記疎水層の原料物質は、過ハロアルキルシランを含む請求項1乃至6のいずれか一項に記載の前記方法。
- 前記各内面上に供給される前記疎水層の原料物質の液相から成る液体中に、前記ダイアフラムの少なくとも一部分と前記背面極の少なくとも一部分とを置く段階を含む請求項1乃至8のいずれか一項に記載の前記方法。
- 前記各内面上に供給される前記疎水層の原料物質の気相を含む容器内に、前記ダイアフラムの少なくとも一部分と前記背面極の少なくとも一部分とを置く段階を含む請求項1乃至8のいずれか一項に記載の前記方法。
- 供給される前記疎水層が、水に対して、90°乃至130°の接触角、例えば、100°乃至110°の接触角を有する請求項1乃至10のいずれか一項に記載の前記方法。
- 供給される前記疎水層は、−40°乃至130℃の温度、例えば、−30℃乃至110℃の温度において安定である請求項1乃至11のいずれか一項に記載の前記方法。
- 供給される前記疎水層は、少なくとも400℃までの温度において、少なくとも5分間に亙り安定である請求項1乃至11のいずれか一項に記載の前記方法。
- ダイアフラム及び背面極を含む超小型電気機械的マイクロフォンであって、
前記ダイアフラムの内面が前記背面極の内面と共同してコンデンサを形成し、
前記背面極及び/又は前記ダイアフラムには、複数の開口が設けられ、
前記各内面は、疎水層を備え、
前記ダイアフラムと前記背面極との間の静的距離が、10μmより小さいものである超小型電気機械的マイクロフォン。 - 前記ダイアフラム及び前記背面極の各内面は、少なくとも、親水性材料で作成される請求項14に記載の超小型電気機械的マイクロフォン。
- 前記開口の各々の最小寸法が、10μmを超えないものであり、例えば、5μmを超えず、1μmを超えず、0.5μmを超えないものである請求項14又は15に記載の超小型電気機械的マイクロフォン。
- 前記開口の各々の最小寸法が、約3μmである請求項14又は15に記載の超小型電気機械的マイクロフォン。
- 前記疎水層は、架橋された分子からなり、前記ダイアフラム及び前記背面極の表面に多数結合された単分子層である請求項14乃至17のいずれかに一項に記載の超小型電気機械的マイクロフォン。
- 前記多数結合された単分子層は、前記ダイアフラム及び前記背面極の表面から離れる方向に疎水鎖を形成している請求項18に記載の超小型電気機械的マイクロフォン。
- 前記単分子層は、構造化された単分子層である請求項18又は19に記載の超小型電気機械的マイクロフォン。
- 前記ダイアフラム及び前記背面極は、ポリシリコン、シリコン酸化物、シリコン窒化物及び/又はシリコンリッチ・シリコン窒化物のグループから選択された各材料で作成される請求項14乃至20のいずれか一項に記載の超小型電気機械的マイクロフォン。
- 前記疎水層の原料物質は、過フルオロアルキルシラン、アルキシラン、又は、過ハロアルキルシランである請求項14乃至21のいずれか一項に記載の超小型電気機械的マイクロフォン。
- 前記開口の数は、30000個程度である請求項14乃至22のいずれか一項に記載の超小型電気機械的マイクロフォン。
- 前記ダイアフラムと前記背面極との間の静的距離が、5μmより小さく、例えば、1μmより小さく、0.5μmより小さく、0.3μmより小さいものである請求項14乃至23のいずれか一項に記載の超小型電気機械的マイクロフォン。
- 前記疎水層は、水に対する90°乃至130°の接触角、例えば、100°乃至110°の接触角を有する請求項14乃至24のいずれか一項に記載の超小型電気機械的マイクロフォン。
- 前記疎水層は、−40°乃至130℃の温度において、例えば、−30℃乃至110℃の温度において安定である請求項14乃至25のいずれか一項に記載の超小型電気機械的マイクロフォン。
- 前記疎水層は、少なくとも、400℃までの温度において、5分間に亙り安定である請求項14乃至25のいずれか一項に記載の超小型電気機械的マイクロフォン。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/867,606 US6859542B2 (en) | 2001-05-31 | 2001-05-31 | Method of providing a hydrophobic layer and a condenser microphone having such a layer |
PCT/DK2002/000365 WO2002098166A1 (en) | 2001-05-31 | 2002-05-29 | A method of providing a hydrophobic layer and a condenser microphone having such a layer |
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JP2005508579A JP2005508579A (ja) | 2005-03-31 |
JP3974574B2 true JP3974574B2 (ja) | 2007-09-12 |
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JP2003501227A Expired - Lifetime JP3974574B2 (ja) | 2001-05-31 | 2002-05-29 | 疎水層供給方法及び該層を有するコンデンサ・マイクロフォン |
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US (2) | US6859542B2 (ja) |
EP (1) | EP1397936B1 (ja) |
JP (1) | JP3974574B2 (ja) |
CN (2) | CN1849016B (ja) |
AT (1) | ATE284120T1 (ja) |
DE (1) | DE60202145T2 (ja) |
WO (1) | WO2002098166A1 (ja) |
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- 2002-05-29 AT AT02742842T patent/ATE284120T1/de not_active IP Right Cessation
- 2002-05-29 CN CN2006100801414A patent/CN1849016B/zh not_active Expired - Lifetime
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CN1849016A (zh) | 2006-10-18 |
USRE40781E1 (en) | 2009-06-23 |
CN1849016B (zh) | 2012-08-08 |
DE60202145T2 (de) | 2005-12-01 |
ATE284120T1 (de) | 2004-12-15 |
US6859542B2 (en) | 2005-02-22 |
CN1511429A (zh) | 2004-07-07 |
US20020181725A1 (en) | 2002-12-05 |
EP1397936B1 (en) | 2004-12-01 |
WO2002098166A1 (en) | 2002-12-05 |
JP2005508579A (ja) | 2005-03-31 |
EP1397936A1 (en) | 2004-03-17 |
CN1269383C (zh) | 2006-08-09 |
DE60202145D1 (de) | 2005-01-05 |
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