CN1511429A - 制备疏水层以及具有疏水层的电容式麦克风的方法 - Google Patents
制备疏水层以及具有疏水层的电容式麦克风的方法 Download PDFInfo
- Publication number
- CN1511429A CN1511429A CNA028106849A CN02810684A CN1511429A CN 1511429 A CN1511429 A CN 1511429A CN A028106849 A CNA028106849 A CN A028106849A CN 02810684 A CN02810684 A CN 02810684A CN 1511429 A CN1511429 A CN 1511429A
- Authority
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- China
- Prior art keywords
- backboard
- hydrophobic layer
- vibrating membrane
- electret condencer
- microphone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002209 hydrophobic effect Effects 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 57
- 239000007791 liquid phase Substances 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 77
- 239000012528 membrane Substances 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims description 8
- 239000012071 phase Substances 0.000 claims description 6
- 238000006116 polymerization reaction Methods 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 230000029936 alkylation Effects 0.000 claims description 5
- 238000005804 alkylation reaction Methods 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000003068 static effect Effects 0.000 abstract description 5
- 238000001947 vapour-phase growth Methods 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 description 22
- 239000011248 coating agent Substances 0.000 description 19
- 238000004062 sedimentation Methods 0.000 description 16
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 7
- -1 halogenated alkyl silicon Chemical compound 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000001035 drying Methods 0.000 description 4
- 239000013545 self-assembled monolayer Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002052 molecular layer Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002094 self assembled monolayer Substances 0.000 description 2
- 238000002444 silanisation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 241000252506 Characiformes Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Signal Processing (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Acoustics & Sound (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Laminated Bodies (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/867,606 US6859542B2 (en) | 2001-05-31 | 2001-05-31 | Method of providing a hydrophobic layer and a condenser microphone having such a layer |
US09/867,606 | 2001-05-31 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100801414A Division CN1849016B (zh) | 2001-05-31 | 2002-05-29 | 具有疏水层的电容式麦克风 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1511429A true CN1511429A (zh) | 2004-07-07 |
CN1269383C CN1269383C (zh) | 2006-08-09 |
Family
ID=25350120
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028106849A Expired - Lifetime CN1269383C (zh) | 2001-05-31 | 2002-05-29 | 制备疏水层的方法以及具有疏水层的电容式麦克风 |
CN2006100801414A Expired - Lifetime CN1849016B (zh) | 2001-05-31 | 2002-05-29 | 具有疏水层的电容式麦克风 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100801414A Expired - Lifetime CN1849016B (zh) | 2001-05-31 | 2002-05-29 | 具有疏水层的电容式麦克风 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6859542B2 (zh) |
EP (1) | EP1397936B1 (zh) |
JP (1) | JP3974574B2 (zh) |
CN (2) | CN1269383C (zh) |
AT (1) | ATE284120T1 (zh) |
DE (1) | DE60202145T2 (zh) |
WO (1) | WO2002098166A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101394686A (zh) * | 2007-09-12 | 2009-03-25 | 帕尔斯微机电系统私人有限公司 | 带有防水表面涂层的微型麦克风组件 |
CN101010983B (zh) * | 2005-08-10 | 2011-08-31 | 宝星电子株式会社 | 硅电容传声器及其安装方法 |
CN103139674A (zh) * | 2011-11-28 | 2013-06-05 | 英飞凌科技股份有限公司 | 麦克风及用于校准麦克风的方法 |
CN103546845A (zh) * | 2012-07-11 | 2014-01-29 | 罗伯特·博世有限公司 | 具有微机械传声器结构的构件 |
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US7045459B2 (en) * | 2002-02-19 | 2006-05-16 | Northrop Grumman Corporation | Thin film encapsulation of MEMS devices |
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JP2004356708A (ja) * | 2003-05-27 | 2004-12-16 | Hosiden Corp | 音響検出機構及びその製造方法 |
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US7706554B2 (en) * | 2004-03-03 | 2010-04-27 | Panasonic Corporation | Electret condenser |
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Cited By (8)
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CN101010983B (zh) * | 2005-08-10 | 2011-08-31 | 宝星电子株式会社 | 硅电容传声器及其安装方法 |
CN101394686A (zh) * | 2007-09-12 | 2009-03-25 | 帕尔斯微机电系统私人有限公司 | 带有防水表面涂层的微型麦克风组件 |
US8542850B2 (en) | 2007-09-12 | 2013-09-24 | Epcos Pte Ltd | Miniature microphone assembly with hydrophobic surface coating |
CN101394686B (zh) * | 2007-09-12 | 2016-06-29 | 爱普科斯私人投资有限公司 | 带有防水表面涂层的微型麦克风组件 |
CN103139674A (zh) * | 2011-11-28 | 2013-06-05 | 英飞凌科技股份有限公司 | 麦克风及用于校准麦克风的方法 |
CN103139674B (zh) * | 2011-11-28 | 2018-08-10 | 英飞凌科技股份有限公司 | 麦克风及用于校准麦克风的方法 |
CN103546845A (zh) * | 2012-07-11 | 2014-01-29 | 罗伯特·博世有限公司 | 具有微机械传声器结构的构件 |
CN103546845B (zh) * | 2012-07-11 | 2018-04-03 | 罗伯特·博世有限公司 | 具有微机械传声器结构的构件 |
Also Published As
Publication number | Publication date |
---|---|
CN1849016B (zh) | 2012-08-08 |
ATE284120T1 (de) | 2004-12-15 |
JP2005508579A (ja) | 2005-03-31 |
EP1397936B1 (en) | 2004-12-01 |
EP1397936A1 (en) | 2004-03-17 |
DE60202145D1 (de) | 2005-01-05 |
US20020181725A1 (en) | 2002-12-05 |
USRE40781E1 (en) | 2009-06-23 |
JP3974574B2 (ja) | 2007-09-12 |
WO2002098166A1 (en) | 2002-12-05 |
DE60202145T2 (de) | 2005-12-01 |
CN1849016A (zh) | 2006-10-18 |
US6859542B2 (en) | 2005-02-22 |
CN1269383C (zh) | 2006-08-09 |
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