CN101394686B - 带有防水表面涂层的微型麦克风组件 - Google Patents
带有防水表面涂层的微型麦克风组件 Download PDFInfo
- Publication number
- CN101394686B CN101394686B CN200810149114.7A CN200810149114A CN101394686B CN 101394686 B CN101394686 B CN 101394686B CN 200810149114 A CN200810149114 A CN 200810149114A CN 101394686 B CN101394686 B CN 101394686B
- Authority
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- China
- Prior art keywords
- microphone
- carrier
- transducer
- integrated circuit
- miniature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011248 coating agent Substances 0.000 title claims abstract description 32
- 238000000576 coating method Methods 0.000 title claims abstract description 32
- 230000005661 hydrophobic surface Effects 0.000 title description 5
- 230000003321 amplification Effects 0.000 claims abstract description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 9
- 230000003750 conditioning effect Effects 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 46
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 150000001343 alkyl silanes Chemical class 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 5
- 239000002094 self assembled monolayer Substances 0.000 claims description 4
- 239000013545 self-assembled monolayer Substances 0.000 claims description 4
- 239000007791 liquid phase Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000000151 deposition Methods 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 230000000712 assembly Effects 0.000 description 7
- 238000000429 assembly Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000002966 varnish Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000001349 alkyl fluorides Chemical class 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004643 cyanate ester Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- AKIOHULKHAVIMI-UHFFFAOYSA-N trichloro(1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,12-pentacosafluorododecyl)silane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)[Si](Cl)(Cl)Cl AKIOHULKHAVIMI-UHFFFAOYSA-N 0.000 description 1
- VIFIHLXNOOCGLJ-UHFFFAOYSA-N trichloro(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl)silane Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC[Si](Cl)(Cl)Cl VIFIHLXNOOCGLJ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/006—Interconnection of transducer parts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Details Of Audible-Bandwidth Transducers (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US99346607P | 2007-09-12 | 2007-09-12 | |
US60/993,466 | 2007-09-12 | ||
US13052408P | 2008-05-30 | 2008-05-30 | |
US61/130,524 | 2008-05-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101394686A CN101394686A (zh) | 2009-03-25 |
CN101394686B true CN101394686B (zh) | 2016-06-29 |
Family
ID=40431845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810149114.7A Expired - Fee Related CN101394686B (zh) | 2007-09-12 | 2008-09-12 | 带有防水表面涂层的微型麦克风组件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8542850B2 (zh) |
EP (1) | EP2037700B1 (zh) |
KR (1) | KR101476387B1 (zh) |
CN (1) | CN101394686B (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8617960B2 (en) * | 2009-12-31 | 2013-12-31 | Texas Instruments Incorporated | Silicon microphone transducer |
KR101381438B1 (ko) * | 2010-04-30 | 2014-04-04 | 유보틱 인텔릭츄얼 프라퍼티 컴퍼니 리미티드 | 인쇄회로기판에 전기적으로 결합되도록 구성된 에어 캐비티 패키지 및 상기 에어 캐비티 패키지의 제공 방법 |
JP5348073B2 (ja) * | 2010-06-01 | 2013-11-20 | 船井電機株式会社 | 電気音響変換素子搭載基板及びマイクロホンユニット、並びにそれらの製造方法 |
DE112011105008B4 (de) * | 2011-03-04 | 2017-10-05 | Tdk Corporation | Mikrofon und Verfahren zum Positionieren einer Membran zwischen zwei Gegenelektroden |
US9232302B2 (en) | 2011-05-31 | 2016-01-05 | Apple Inc. | Microphone assemblies with through-silicon vias |
US8948420B2 (en) * | 2011-08-02 | 2015-02-03 | Robert Bosch Gmbh | MEMS microphone |
DE112012007235T5 (de) | 2012-12-18 | 2015-09-24 | Epcos Ag | Top-Port-Mems-Mikrofon und Verfahren zu dessen Herstellung |
US9301075B2 (en) | 2013-04-24 | 2016-03-29 | Knowles Electronics, Llc | MEMS microphone with out-gassing openings and method of manufacturing the same |
US9299671B2 (en) * | 2013-10-15 | 2016-03-29 | Invensense, Inc. | Integrated CMOS back cavity acoustic transducer and the method of producing the same |
US20160037261A1 (en) * | 2014-07-29 | 2016-02-04 | Knowles Electronics, Llc | Composite Back Plate And Method Of Manufacturing The Same |
CN104735596A (zh) * | 2014-12-30 | 2015-06-24 | 华天科技(西安)有限公司 | 一种硅麦克风封装结构及其制备方法 |
DE112016005824T5 (de) * | 2015-12-18 | 2018-08-30 | Knowles Electronics, Llc | Mikrofon mit einem hydrophoben eindringungsschutz |
JP6667351B2 (ja) * | 2016-04-08 | 2020-03-18 | アルプスアルパイン株式会社 | センサ装置 |
US10231061B2 (en) * | 2017-04-28 | 2019-03-12 | Infineon Technologies Ag | Sound transducer with housing and MEMS structure |
CN110677753A (zh) * | 2019-09-24 | 2020-01-10 | 深圳市中擎创科技有限公司 | 一种基于平板电脑的多受话器语音接收系统及接收方法 |
US11671763B2 (en) | 2021-02-24 | 2023-06-06 | Shure Acquisition Holdings, Inc. | Parylene electret condenser microphone backplate |
Citations (1)
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CN1511429A (zh) * | 2001-05-31 | 2004-07-07 | ��ɣ������ķ���� | 制备疏水层以及具有疏水层的电容式麦克风的方法 |
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EP1821570B1 (en) | 2000-11-28 | 2017-02-08 | Knowles Electronics, LLC | Miniature silicon condenser microphone and method for producing same |
US7166910B2 (en) * | 2000-11-28 | 2007-01-23 | Knowles Electronics Llc | Miniature silicon condenser microphone |
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-
2008
- 2008-09-02 US US12/231,398 patent/US8542850B2/en active Active
- 2008-09-03 EP EP08163570.8A patent/EP2037700B1/en active Active
- 2008-09-12 KR KR1020080090525A patent/KR101476387B1/ko not_active IP Right Cessation
- 2008-09-12 CN CN200810149114.7A patent/CN101394686B/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1511429A (zh) * | 2001-05-31 | 2004-07-07 | ��ɣ������ķ���� | 制备疏水层以及具有疏水层的电容式麦克风的方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2037700A3 (en) | 2011-04-06 |
KR20090027598A (ko) | 2009-03-17 |
EP2037700A2 (en) | 2009-03-18 |
CN101394686A (zh) | 2009-03-25 |
US20090067659A1 (en) | 2009-03-12 |
KR101476387B1 (ko) | 2014-12-24 |
EP2037700B1 (en) | 2014-04-30 |
US8542850B2 (en) | 2013-09-24 |
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