JP3971456B2 - 装着ＳｉＣダイ及びＳｉＣ用ダイ装着方法 - Google Patents

装着ＳｉＣダイ及びＳｉＣ用ダイ装着方法 Download PDF

Info

Publication number
JP3971456B2
JP3971456B2 JP52938597A JP52938597A JP3971456B2 JP 3971456 B2 JP3971456 B2 JP 3971456B2 JP 52938597 A JP52938597 A JP 52938597A JP 52938597 A JP52938597 A JP 52938597A JP 3971456 B2 JP3971456 B2 JP 3971456B2
Authority
JP
Japan
Prior art keywords
layer
sic
die
sic die
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP52938597A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001501774A (ja
JP2001501774A5 (https=
Inventor
ジョン エー オストップ
リ―シュー チェン
Original Assignee
ノースロップ グラマン コーポレーション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ノースロップ グラマン コーポレーション filed Critical ノースロップ グラマン コーポレーション
Publication of JP2001501774A publication Critical patent/JP2001501774A/ja
Publication of JP2001501774A5 publication Critical patent/JP2001501774A5/ja
Application granted granted Critical
Publication of JP3971456B2 publication Critical patent/JP3971456B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders

Landscapes

  • Die Bonding (AREA)
JP52938597A 1996-02-13 1997-01-31 装着ＳｉＣダイ及びＳｉＣ用ダイ装着方法 Expired - Lifetime JP3971456B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/600,777 US5851852A (en) 1996-02-13 1996-02-13 Die attached process for SiC
US08/600,777 1996-02-13
PCT/US1997/001790 WO1997030474A1 (en) 1996-02-13 1997-01-31 DIE ATTACHED SiC AND DIE ATTACH PROCEDURE FOR SiC

Publications (3)

Publication Number Publication Date
JP2001501774A JP2001501774A (ja) 2001-02-06
JP2001501774A5 JP2001501774A5 (https=) 2004-10-28
JP3971456B2 true JP3971456B2 (ja) 2007-09-05

Family

ID=24404995

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52938597A Expired - Lifetime JP3971456B2 (ja) 1996-02-13 1997-01-31 装着ＳｉＣダイ及びＳｉＣ用ダイ装着方法

Country Status (5)

Country Link
US (1) US5851852A (https=)
EP (1) EP0880801B1 (https=)
JP (1) JP3971456B2 (https=)
DE (1) DE69711852T2 (https=)
WO (1) WO1997030474A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6613978B2 (en) 1993-06-18 2003-09-02 Maxwell Technologies, Inc. Radiation shielding of three dimensional multi-chip modules
US5880403A (en) 1994-04-01 1999-03-09 Space Electronics, Inc. Radiation shielding of three dimensional multi-chip modules
US6455864B1 (en) 1994-04-01 2002-09-24 Maxwell Electronic Components Group, Inc. Methods and compositions for ionizing radiation shielding
US6720493B1 (en) 1994-04-01 2004-04-13 Space Electronics, Inc. Radiation shielding of integrated circuits and multi-chip modules in ceramic and metal packages
US6261508B1 (en) 1994-04-01 2001-07-17 Maxwell Electronic Components Group, Inc. Method for making a shielding composition
US5916513A (en) * 1997-08-04 1999-06-29 Motorola Method and apparatus for affixing components to a substrate when a manufacturing line ceases operation
KR100303446B1 (ko) * 1998-10-29 2002-10-04 삼성전자 주식회사 액정표시장치용박막트랜지스터기판의제조방법
US7166320B1 (en) 2000-02-14 2007-01-23 Seagate Technology Llc Post-deposition annealed recording media and method of manufacturing the same
US6368899B1 (en) * 2000-03-08 2002-04-09 Maxwell Electronic Components Group, Inc. Electronic device packaging
US7382043B2 (en) 2002-09-25 2008-06-03 Maxwell Technologies, Inc. Method and apparatus for shielding an integrated circuit from radiation
US7191516B2 (en) * 2003-07-16 2007-03-20 Maxwell Technologies, Inc. Method for shielding integrated circuit devices
DE102004015017B4 (de) * 2004-03-26 2006-11-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Erzeugung von mechanischen und elektrischen Verbindungen zwischen den Oberflächen zweier Substrate
US8318545B2 (en) * 2010-01-28 2012-11-27 Freescale Semiconductor, Inc. Method of making a mounted gallium nitride device
US20130330571A1 (en) * 2012-06-06 2013-12-12 Northrop Grumman Systems Corporation Method and apparatus for providing improved backside metal contacts to silicon carbide

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573568A (en) * 1969-06-18 1971-04-06 Gen Electric Light emitting semiconductor chips mounted in a slotted substrate forming a display apparatus
US4042951A (en) * 1975-09-25 1977-08-16 Texas Instruments Incorporated Gold-germanium alloy contacts for a semiconductor device
US4457976A (en) * 1983-03-28 1984-07-03 Rca Corporation Method for mounting a sapphire chip on a metal base and article produced thereby
US4657825A (en) * 1984-12-24 1987-04-14 Ngk Spark Plug Co., Ltd. Electronic component using a silicon carbide substrate and a method of making it
US4978052A (en) * 1986-11-07 1990-12-18 Olin Corporation Semiconductor die attach system
EP0277645A1 (en) * 1987-02-02 1988-08-10 Sumitomo Electric Industries Limited Ceramics-metal jointed body
US5368880A (en) * 1989-12-06 1994-11-29 Westinghouse Electric Corporation Eutectic bond and method of gold/titanium eutectic bonding of cadmium telluride to sapphire
US5008735A (en) * 1989-12-07 1991-04-16 General Instrument Corporation Packaged diode for high temperature operation
JP3293966B2 (ja) * 1993-07-05 2002-06-17 太平洋セメント株式会社 セラミックスとシリコン板との接合方法

Also Published As

Publication number Publication date
DE69711852D1 (de) 2002-05-16
JP2001501774A (ja) 2001-02-06
DE69711852T2 (de) 2002-10-10
US5851852A (en) 1998-12-22
EP0880801A1 (en) 1998-12-02
WO1997030474A1 (en) 1997-08-21
EP0880801B1 (en) 2002-04-10

Similar Documents

Publication Publication Date Title
JP3971456B2 (ja) 装着ＳｉＣダイ及びＳｉＣ用ダイ装着方法
JP2984068B2 (ja) 半導体装置の製造方法
JP3787366B2 (ja) 背面を金属化した半導体及びその製造方法
JPH1084003A (ja) 半導体メタリゼイションシステムを形成する方法およびその構造
US4042951A (en) Gold-germanium alloy contacts for a semiconductor device
US5105258A (en) Metal system for semiconductor die attach
US6376910B1 (en) Solder-on back metal for semiconductor die
JPH11186120A (ja) 同種あるいは異種材料基板間の密着接合法
US3986251A (en) Germanium doped light emitting diode bonding process
JPH05175252A (ja) 半導体電極構造体
JPH08115928A (ja) 半導体装置およびその製造方法
JPS6153851B2 (https=)
WO2007034791A1 (ja) 半田層及びこれを用いた放熱基板並びにその製造方法
US4921158A (en) Brazing material
JPS59189625A (ja) 半導体装置の製造方法
JPS61181136A (ja) ダイボンデイング方法
JPH0793329B2 (ja) 半導体ペレツトの固定方法
JPS6337497B2 (https=)
JPH038371A (ja) 半導体装置
Gross et al. Aluminum-capped copper bond pads for ultrasonic heavy copper wire-bonding on power devices
JPS61121435A (ja) 半導体装置の製造方法
JPS63142638A (ja) 半導体装置の製造方法
JPS60143636A (ja) 電子部品
JPS6233336Y2 (https=)
JPS62169429A (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050419

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050704

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20050823

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20060213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070404

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070608

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100615

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110615

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110615

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120615

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120615

Year of fee payment: 5

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120615

Year of fee payment: 5

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D02

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120615

Year of fee payment: 5

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D04

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120615

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130615

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term