DE69711852T2 - BEFESTIGTER SiC-WÜRFEL UND VERFAHREN ZUR BEFESTIGUNG VON SiC-WÜRFELN - Google Patents

BEFESTIGTER SiC-WÜRFEL UND VERFAHREN ZUR BEFESTIGUNG VON SiC-WÜRFELN

Info

Publication number
DE69711852T2
DE69711852T2 DE69711852T DE69711852T DE69711852T2 DE 69711852 T2 DE69711852 T2 DE 69711852T2 DE 69711852 T DE69711852 T DE 69711852T DE 69711852 T DE69711852 T DE 69711852T DE 69711852 T2 DE69711852 T2 DE 69711852T2
Authority
DE
Germany
Prior art keywords
sic
layer
cube
die
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69711852T
Other languages
German (de)
English (en)
Other versions
DE69711852D1 (de
Inventor
Li-Shu Chen
A. Ostop
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Corp
Original Assignee
Northrop Grumman Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northrop Grumman Corp filed Critical Northrop Grumman Corp
Publication of DE69711852D1 publication Critical patent/DE69711852D1/de
Application granted granted Critical
Publication of DE69711852T2 publication Critical patent/DE69711852T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders

Landscapes

  • Die Bonding (AREA)
DE69711852T 1996-02-13 1997-01-31 BEFESTIGTER SiC-WÜRFEL UND VERFAHREN ZUR BEFESTIGUNG VON SiC-WÜRFELN Expired - Lifetime DE69711852T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/600,777 US5851852A (en) 1996-02-13 1996-02-13 Die attached process for SiC
PCT/US1997/001790 WO1997030474A1 (en) 1996-02-13 1997-01-31 DIE ATTACHED SiC AND DIE ATTACH PROCEDURE FOR SiC

Publications (2)

Publication Number Publication Date
DE69711852D1 DE69711852D1 (de) 2002-05-16
DE69711852T2 true DE69711852T2 (de) 2002-10-10

Family

ID=24404995

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69711852T Expired - Lifetime DE69711852T2 (de) 1996-02-13 1997-01-31 BEFESTIGTER SiC-WÜRFEL UND VERFAHREN ZUR BEFESTIGUNG VON SiC-WÜRFELN

Country Status (5)

Country Link
US (1) US5851852A (https=)
EP (1) EP0880801B1 (https=)
JP (1) JP3971456B2 (https=)
DE (1) DE69711852T2 (https=)
WO (1) WO1997030474A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6613978B2 (en) 1993-06-18 2003-09-02 Maxwell Technologies, Inc. Radiation shielding of three dimensional multi-chip modules
US5880403A (en) 1994-04-01 1999-03-09 Space Electronics, Inc. Radiation shielding of three dimensional multi-chip modules
US6455864B1 (en) 1994-04-01 2002-09-24 Maxwell Electronic Components Group, Inc. Methods and compositions for ionizing radiation shielding
US6720493B1 (en) 1994-04-01 2004-04-13 Space Electronics, Inc. Radiation shielding of integrated circuits and multi-chip modules in ceramic and metal packages
US6261508B1 (en) 1994-04-01 2001-07-17 Maxwell Electronic Components Group, Inc. Method for making a shielding composition
US5916513A (en) * 1997-08-04 1999-06-29 Motorola Method and apparatus for affixing components to a substrate when a manufacturing line ceases operation
KR100303446B1 (ko) * 1998-10-29 2002-10-04 삼성전자 주식회사 액정표시장치용박막트랜지스터기판의제조방법
US7166320B1 (en) 2000-02-14 2007-01-23 Seagate Technology Llc Post-deposition annealed recording media and method of manufacturing the same
US6368899B1 (en) * 2000-03-08 2002-04-09 Maxwell Electronic Components Group, Inc. Electronic device packaging
US7382043B2 (en) 2002-09-25 2008-06-03 Maxwell Technologies, Inc. Method and apparatus for shielding an integrated circuit from radiation
US7191516B2 (en) * 2003-07-16 2007-03-20 Maxwell Technologies, Inc. Method for shielding integrated circuit devices
DE102004015017B4 (de) * 2004-03-26 2006-11-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Erzeugung von mechanischen und elektrischen Verbindungen zwischen den Oberflächen zweier Substrate
US8318545B2 (en) * 2010-01-28 2012-11-27 Freescale Semiconductor, Inc. Method of making a mounted gallium nitride device
US20130330571A1 (en) * 2012-06-06 2013-12-12 Northrop Grumman Systems Corporation Method and apparatus for providing improved backside metal contacts to silicon carbide

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573568A (en) * 1969-06-18 1971-04-06 Gen Electric Light emitting semiconductor chips mounted in a slotted substrate forming a display apparatus
US4042951A (en) * 1975-09-25 1977-08-16 Texas Instruments Incorporated Gold-germanium alloy contacts for a semiconductor device
US4457976A (en) * 1983-03-28 1984-07-03 Rca Corporation Method for mounting a sapphire chip on a metal base and article produced thereby
US4657825A (en) * 1984-12-24 1987-04-14 Ngk Spark Plug Co., Ltd. Electronic component using a silicon carbide substrate and a method of making it
US4978052A (en) * 1986-11-07 1990-12-18 Olin Corporation Semiconductor die attach system
EP0277645A1 (en) * 1987-02-02 1988-08-10 Sumitomo Electric Industries Limited Ceramics-metal jointed body
US5368880A (en) * 1989-12-06 1994-11-29 Westinghouse Electric Corporation Eutectic bond and method of gold/titanium eutectic bonding of cadmium telluride to sapphire
US5008735A (en) * 1989-12-07 1991-04-16 General Instrument Corporation Packaged diode for high temperature operation
JP3293966B2 (ja) * 1993-07-05 2002-06-17 太平洋セメント株式会社 セラミックスとシリコン板との接合方法

Also Published As

Publication number Publication date
DE69711852D1 (de) 2002-05-16
JP2001501774A (ja) 2001-02-06
US5851852A (en) 1998-12-22
EP0880801A1 (en) 1998-12-02
WO1997030474A1 (en) 1997-08-21
JP3971456B2 (ja) 2007-09-05
EP0880801B1 (en) 2002-04-10

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Representative=s name: WIESE KONNERTH FISCHER PATENTANWAELTE PARTNERSCHAF

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Representative=s name: SCHROETER LEHMANN FISCHER & NEUGEBAUER, 81479 MUEN

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Representative=s name: NEUGEBAUER, JUERGEN, DIPL.-PHYS.UNIV. M.A./SUN, DE