JP3962296B2 - 強誘電体メモリ装置及びその製造方法 - Google Patents

強誘電体メモリ装置及びその製造方法 Download PDF

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Publication number
JP3962296B2
JP3962296B2 JP2002224451A JP2002224451A JP3962296B2 JP 3962296 B2 JP3962296 B2 JP 3962296B2 JP 2002224451 A JP2002224451 A JP 2002224451A JP 2002224451 A JP2002224451 A JP 2002224451A JP 3962296 B2 JP3962296 B2 JP 3962296B2
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Japan
Prior art keywords
film
hydrogen barrier
barrier film
ferroelectric
line direction
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Japanese (ja)
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JP2003174145A (ja
JP2003174145A5 (enExample
Inventor
貴文 吉川
巧 三河
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2002224451A priority Critical patent/JP3962296B2/ja
Publication of JP2003174145A publication Critical patent/JP2003174145A/ja
Publication of JP2003174145A5 publication Critical patent/JP2003174145A5/ja
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JP2002224451A 2001-09-27 2002-08-01 強誘電体メモリ装置及びその製造方法 Expired - Lifetime JP3962296B2 (ja)

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JP2002224451A JP3962296B2 (ja) 2001-09-27 2002-08-01 強誘電体メモリ装置及びその製造方法

Applications Claiming Priority (3)

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JP2001296855 2001-09-27
JP2001-296855 2001-09-27
JP2002224451A JP3962296B2 (ja) 2001-09-27 2002-08-01 強誘電体メモリ装置及びその製造方法

Related Child Applications (1)

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JP2004355243A Division JP4351990B2 (ja) 2001-09-27 2004-12-08 強誘電体メモリ装置及びその製造方法

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JP2003174145A JP2003174145A (ja) 2003-06-20
JP2003174145A5 JP2003174145A5 (enExample) 2005-05-26
JP3962296B2 true JP3962296B2 (ja) 2007-08-22

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4636834B2 (ja) * 2002-11-13 2011-02-23 パナソニック株式会社 半導体装置及びその製造方法
CN100355073C (zh) 2002-11-13 2007-12-12 松下电器产业株式会社 半导体器件及其制造方法
JP4549947B2 (ja) * 2003-05-27 2010-09-22 パナソニック株式会社 半導体装置
JP3935475B2 (ja) 2004-03-18 2007-06-20 松下電器産業株式会社 半導体装置及びその製造方法
US8552484B2 (en) 2004-07-02 2013-10-08 Fujitsu Semiconductor Limited Semiconductor device and method for fabricating the same
JP4042730B2 (ja) 2004-09-02 2008-02-06 セイコーエプソン株式会社 強誘電体メモリおよびその製造方法
JP2006108152A (ja) * 2004-09-30 2006-04-20 Oki Electric Ind Co Ltd 半導体記憶装置
JP4422644B2 (ja) 2005-03-30 2010-02-24 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP2006302987A (ja) * 2005-04-18 2006-11-02 Nec Electronics Corp 半導体装置およびその製造方法
JP4756915B2 (ja) * 2005-05-31 2011-08-24 Ｏｋｉセミコンダクタ株式会社 強誘電体メモリ装置及びその製造方法
KR100973703B1 (ko) 2005-06-17 2010-08-04 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치 및 그 제조 방법
JP4557903B2 (ja) * 2006-02-10 2010-10-06 パナソニック株式会社 半導体装置及びその製造方法
JP2024034899A (ja) * 2022-09-01 2024-03-13 株式会社デンソー 水素ガスバリア膜および水素ガスバリア構造体

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JP2003174145A (ja) 2003-06-20

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