JP3943732B2 - 高耐圧半導体素子 - Google Patents

高耐圧半導体素子 Download PDF

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Publication number
JP3943732B2
JP3943732B2 JP30536898A JP30536898A JP3943732B2 JP 3943732 B2 JP3943732 B2 JP 3943732B2 JP 30536898 A JP30536898 A JP 30536898A JP 30536898 A JP30536898 A JP 30536898A JP 3943732 B2 JP3943732 B2 JP 3943732B2
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JP
Japan
Prior art keywords
layer
low
potential side
type
resistance layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP30536898A
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English (en)
Japanese (ja)
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JP2000133801A5 (enExample
JP2000133801A (ja
Inventor
明夫 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP30536898A priority Critical patent/JP3943732B2/ja
Publication of JP2000133801A publication Critical patent/JP2000133801A/ja
Publication of JP2000133801A5 publication Critical patent/JP2000133801A5/ja
Application granted granted Critical
Publication of JP3943732B2 publication Critical patent/JP3943732B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP30536898A 1998-10-27 1998-10-27 高耐圧半導体素子 Expired - Fee Related JP3943732B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30536898A JP3943732B2 (ja) 1998-10-27 1998-10-27 高耐圧半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30536898A JP3943732B2 (ja) 1998-10-27 1998-10-27 高耐圧半導体素子

Publications (3)

Publication Number Publication Date
JP2000133801A JP2000133801A (ja) 2000-05-12
JP2000133801A5 JP2000133801A5 (enExample) 2005-07-28
JP3943732B2 true JP3943732B2 (ja) 2007-07-11

Family

ID=17944278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30536898A Expired - Fee Related JP3943732B2 (ja) 1998-10-27 1998-10-27 高耐圧半導体素子

Country Status (1)

Country Link
JP (1) JP3943732B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006210368A (ja) 1999-07-02 2006-08-10 Toyota Central Res & Dev Lab Inc 縦型半導体装置及びその製造方法
JP4939760B2 (ja) 2005-03-01 2012-05-30 株式会社東芝 半導体装置
JP4997715B2 (ja) * 2005-05-18 2012-08-08 富士電機株式会社 半導体装置およびその製造方法
JP5052025B2 (ja) 2006-03-29 2012-10-17 株式会社東芝 電力用半導体素子
JP4539680B2 (ja) 2007-05-14 2010-09-08 株式会社デンソー 半導体装置およびその製造方法
JP4670915B2 (ja) 2008-08-08 2011-04-13 ソニー株式会社 半導体装置
KR101023079B1 (ko) 2008-11-04 2011-03-25 주식회사 동부하이텍 반도체 소자 및 그의 제조 방법
EP3780071B1 (en) * 2018-03-26 2023-03-22 Nissan Motor Co., Ltd. Semiconductor device and method for manufacturing same
CN117766588B (zh) * 2024-02-22 2024-04-30 南京邮电大学 具有延伸漏结构的超结双soi-ldmos器件及制造方法

Also Published As

Publication number Publication date
JP2000133801A (ja) 2000-05-12

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