JP3941966B2 - 絶縁性基板のような基板用の低電圧静電クランプ - Google Patents
絶縁性基板のような基板用の低電圧静電クランプ Download PDFInfo
- Publication number
- JP3941966B2 JP3941966B2 JP52388897A JP52388897A JP3941966B2 JP 3941966 B2 JP3941966 B2 JP 3941966B2 JP 52388897 A JP52388897 A JP 52388897A JP 52388897 A JP52388897 A JP 52388897A JP 3941966 B2 JP3941966 B2 JP 3941966B2
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- JP
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- Prior art keywords
- electrodes
- substrate
- electrostatic clamp
- electrode
- array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims description 88
- 238000000034 method Methods 0.000 claims description 44
- 239000010408 film Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 229910052582 BN Inorganic materials 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 238000001393 microlithography Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910000423 chromium oxide Inorganic materials 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 239000000112 cooling gas Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- -1 lithography Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Coating Apparatus (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/577,382 | 1995-12-22 | ||
| US08/577,382 US5838529A (en) | 1995-12-22 | 1995-12-22 | Low voltage electrostatic clamp for substrates such as dielectric substrates |
| PCT/US1996/020883 WO1997023945A1 (en) | 1995-12-22 | 1996-12-20 | Low voltage electrostatic clamp for substrates such as dielectric substrates |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000502509A JP2000502509A (ja) | 2000-02-29 |
| JP2000502509A5 JP2000502509A5 (enExample) | 2004-11-11 |
| JP3941966B2 true JP3941966B2 (ja) | 2007-07-11 |
Family
ID=24308464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52388897A Expired - Lifetime JP3941966B2 (ja) | 1995-12-22 | 1996-12-20 | 絶縁性基板のような基板用の低電圧静電クランプ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5838529A (enExample) |
| EP (1) | EP0880818B1 (enExample) |
| JP (1) | JP3941966B2 (enExample) |
| WO (1) | WO1997023945A1 (enExample) |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6669653B2 (en) * | 1997-05-05 | 2003-12-30 | Trig Medical Ltd. | Method and apparatus for monitoring the progress of labor |
| JP3805134B2 (ja) * | 1999-05-25 | 2006-08-02 | 東陶機器株式会社 | 絶縁性基板吸着用静電チャック |
| US6444083B1 (en) | 1999-06-30 | 2002-09-03 | Lam Research Corporation | Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof |
| US6408786B1 (en) | 1999-09-23 | 2002-06-25 | Lam Research Corporation | Semiconductor processing equipment having tiled ceramic liner |
| US6227140B1 (en) | 1999-09-23 | 2001-05-08 | Lam Research Corporation | Semiconductor processing equipment having radiant heated ceramic liner |
| US6673198B1 (en) * | 1999-12-22 | 2004-01-06 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| JP4640876B2 (ja) * | 2000-06-13 | 2011-03-02 | 株式会社アルバック | 基板搬送装置 |
| AU7370001A (en) * | 2000-06-14 | 2001-12-24 | Herman Allison | Electro-adhesion device |
| US6890861B1 (en) * | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US6506254B1 (en) | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US6475336B1 (en) | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
| US6790242B2 (en) | 2000-12-29 | 2004-09-14 | Lam Research Corporation | Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof |
| US7128804B2 (en) | 2000-12-29 | 2006-10-31 | Lam Research Corporation | Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof |
| US6613442B2 (en) | 2000-12-29 | 2003-09-02 | Lam Research Corporation | Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof |
| US6620520B2 (en) | 2000-12-29 | 2003-09-16 | Lam Research Corporation | Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof |
| US6533910B2 (en) | 2000-12-29 | 2003-03-18 | Lam Research Corporation | Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof |
| US6537429B2 (en) | 2000-12-29 | 2003-03-25 | Lam Research Corporation | Diamond coatings on reactor wall and method of manufacturing thereof |
| US6830622B2 (en) * | 2001-03-30 | 2004-12-14 | Lam Research Corporation | Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof |
| US6483690B1 (en) | 2001-06-28 | 2002-11-19 | Lam Research Corporation | Ceramic electrostatic chuck assembly and method of making |
| US6780787B2 (en) * | 2002-03-21 | 2004-08-24 | Lam Research Corporation | Low contamination components for semiconductor processing apparatus and methods for making components |
| US7311797B2 (en) * | 2002-06-27 | 2007-12-25 | Lam Research Corporation | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor |
| US6898065B2 (en) * | 2002-07-26 | 2005-05-24 | Brad Mays | Method and apparatus for operating an electrostatic chuck in a semiconductor substrate processing system |
| US7033443B2 (en) * | 2003-03-28 | 2006-04-25 | Axcelis Technologies, Inc. | Gas-cooled clamp for RTP |
| JP4247739B2 (ja) * | 2003-07-09 | 2009-04-02 | Toto株式会社 | 静電チャックによるガラス基板の吸着方法および静電チャック |
| EP1498777A1 (en) * | 2003-07-15 | 2005-01-19 | ASML Netherlands B.V. | Substrate holder and lithographic projection apparatus |
| EP1498780A3 (en) * | 2003-07-15 | 2005-04-06 | ASML Netherlands B.V. | Substrate holder and lithographic projection apparatus |
| US7072165B2 (en) * | 2003-08-18 | 2006-07-04 | Axcelis Technologies, Inc. | MEMS based multi-polar electrostatic chuck |
| US6947274B2 (en) * | 2003-09-08 | 2005-09-20 | Axcelis Technologies, Inc. | Clamping and de-clamping semiconductor wafers on an electrostatic chuck using wafer inertial confinement by applying a single-phase square wave AC clamping voltage |
| US7072166B2 (en) * | 2003-09-12 | 2006-07-04 | Axcelis Technologies, Inc. | Clamping and de-clamping semiconductor wafers on a J-R electrostatic chuck having a micromachined surface by using force delay in applying a single-phase square wave AC clamping voltage |
| US6905984B2 (en) * | 2003-10-10 | 2005-06-14 | Axcelis Technologies, Inc. | MEMS based contact conductivity electrostatic chuck |
| US6946403B2 (en) * | 2003-10-28 | 2005-09-20 | Axcelis Technologies, Inc. | Method of making a MEMS electrostatic chuck |
| US7245357B2 (en) * | 2003-12-15 | 2007-07-17 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR100526923B1 (ko) * | 2004-01-05 | 2005-11-09 | 삼성전자주식회사 | 반도체 제조설비의 리프트핀 및 그 제조방법 |
| JP4684222B2 (ja) * | 2004-03-19 | 2011-05-18 | 株式会社クリエイティブ テクノロジー | 双極型静電チャック |
| TWI271815B (en) | 2004-11-30 | 2007-01-21 | Sanyo Electric Co | Method for processing stuck object and electrostatic sticking method |
| US8158238B2 (en) | 2005-07-08 | 2012-04-17 | Creative Technology Corporation | Electrostatic chuck and electrode sheet for electrostatic chuck |
| DE202005011367U1 (de) | 2005-07-18 | 2005-09-29 | Retzlaff, Udo, Dr. | Transfer-ESC auf Wafer-Basis |
| US20070139855A1 (en) * | 2005-12-21 | 2007-06-21 | Asml Netherlands B.V. | Lithographic apparatus and method of manufacturing an electrostatic clamp for a lithographic apparatus |
| CN101416031A (zh) * | 2006-03-29 | 2009-04-22 | 约翰尼斯海登海恩博士股份有限公司 | 用于使刻度尺保持在载体上的方法以及具有载体和刻度尺的装置 |
| WO2008082978A2 (en) | 2006-12-26 | 2008-07-10 | Saint-Gobain Ceramics & Plastics, Inc. | Electrostatic chuck and method of forming |
| US20080151466A1 (en) * | 2006-12-26 | 2008-06-26 | Saint-Gobain Ceramics & Plastics, Inc. | Electrostatic chuck and method of forming |
| KR100886015B1 (ko) | 2007-05-15 | 2009-02-26 | 삼성전자주식회사 | 다중 리프터를 갖는 반도체 제조설비의 드라이 크린방법 |
| US7972471B2 (en) * | 2007-06-29 | 2011-07-05 | Lam Research Corporation | Inductively coupled dual zone processing chamber with single planar antenna |
| KR101553423B1 (ko) * | 2007-12-19 | 2015-09-15 | 램 리써치 코포레이션 | 반도체 진공 프로세싱 장치용 필름 점착제 |
| US8418649B2 (en) * | 2007-12-19 | 2013-04-16 | Lam Research Corporation | Composite showerhead electrode assembly for a plasma processing apparatus |
| JP2008205508A (ja) * | 2008-05-15 | 2008-09-04 | Ulvac Japan Ltd | 基板搬送装置、真空処理装置 |
| JP2008205509A (ja) * | 2008-05-15 | 2008-09-04 | Ulvac Japan Ltd | 絶縁基板搬送方法、位置合わせ方法 |
| US7760004B2 (en) * | 2008-10-30 | 2010-07-20 | Analog Devices, Inc. | Clamp networks to insure operation of integrated circuit chips |
| US9442395B2 (en) | 2012-02-03 | 2016-09-13 | Asml Netherlands B.V. | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder |
| GB201321463D0 (en) | 2013-12-05 | 2014-01-22 | Oxford Instr Nanotechnology Tools Ltd | Electrostatic clamping method and apparatus |
| CN105812989A (zh) * | 2014-12-31 | 2016-07-27 | 鸿富锦精密工业(深圳)有限公司 | 扬声器 |
| FR3063832B1 (fr) | 2017-03-08 | 2019-03-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede d'auto-assemblage de composants microelectroniques |
| DE102019101657A1 (de) | 2019-01-23 | 2020-07-23 | Berliner Glas Kgaa Herbert Kubatz Gmbh & Co | Haltevorrichtung zur elektrostatischen Halterung eines Bauteils mit einem durch Diffusionsbonden gefügten Grundkörper und Verfahren zu deren Herstellung |
| WO2020206389A1 (en) | 2019-04-05 | 2020-10-08 | Heraeus Gmsi Llc | Controlled porosity yttrium oxide for etch applications |
| CN116134003A (zh) | 2020-10-03 | 2023-05-16 | 贺利氏科纳米北美有限责任公司 | 大尺寸的烧结氧化钇体 |
| WO2022081700A1 (en) | 2020-10-15 | 2022-04-21 | Heraeus Conamic North America Llc | Multilayer sintered ceramic body and method of making |
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| EP4215360A1 (en) | 2022-01-24 | 2023-07-26 | Heraeus Conamic North America LLC | Multilayer sintered ceramic body and method of making |
| TWI876287B (zh) | 2022-03-31 | 2025-03-11 | 美商賀利氏科納米北美有限責任公司 | 用於陶瓷之高頻率拋光的方法與設備以及多晶燒結陶瓷體 |
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| US12165899B2 (en) | 2022-10-07 | 2024-12-10 | Applied Materials, Inc. | Bipolar electrostatic chuck for etch chamber |
| WO2025012822A2 (en) | 2023-07-12 | 2025-01-16 | Solventum Intellectual Properties Company | Packaged pressure sensitive adhesives |
| TW202517602A (zh) | 2023-10-30 | 2025-05-01 | 美商賀利氏科納米北美有限責任公司 美國亞利桑那州錢德勒市北羅斯福大道 301 號 | 鑭系元素增強的耐腐蝕性 |
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| US4962441A (en) * | 1989-04-10 | 1990-10-09 | Applied Materials, Inc. | Isolated electrostatic wafer blade clamp |
| US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
| US5001594A (en) * | 1989-09-06 | 1991-03-19 | Mcnc | Electrostatic handling device |
| US5013400A (en) * | 1990-01-30 | 1991-05-07 | General Signal Corporation | Dry etch process for forming champagne profiles, and dry etch apparatus |
| JP3129452B2 (ja) * | 1990-03-13 | 2001-01-29 | 富士電機株式会社 | 静電チャック |
| US5238499A (en) * | 1990-07-16 | 1993-08-24 | Novellus Systems, Inc. | Gas-based substrate protection during processing |
| US5055964A (en) * | 1990-09-07 | 1991-10-08 | International Business Machines Corporation | Electrostatic chuck having tapered electrodes |
| US5200232A (en) * | 1990-12-11 | 1993-04-06 | Lam Research Corporation | Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors |
| EP0506537A1 (en) * | 1991-03-28 | 1992-09-30 | Shin-Etsu Chemical Co., Ltd. | Electrostatic chuck |
| US5191506A (en) * | 1991-05-02 | 1993-03-02 | International Business Machines Corporation | Ceramic electrostatic chuck |
| US5155652A (en) * | 1991-05-02 | 1992-10-13 | International Business Machines Corporation | Temperature cycling ceramic electrostatic chuck |
| US5315473A (en) * | 1992-01-21 | 1994-05-24 | Applied Materials, Inc. | Isolated electrostatic chuck and excitation method |
| US5350479A (en) * | 1992-12-02 | 1994-09-27 | Applied Materials, Inc. | Electrostatic chuck for high power plasma processing |
| US5326725A (en) * | 1993-03-11 | 1994-07-05 | Applied Materials, Inc. | Clamping ring and susceptor therefor |
-
1995
- 1995-12-22 US US08/577,382 patent/US5838529A/en not_active Expired - Lifetime
-
1996
- 1996-12-20 WO PCT/US1996/020883 patent/WO1997023945A1/en not_active Ceased
- 1996-12-20 EP EP96945445A patent/EP0880818B1/en not_active Expired - Lifetime
- 1996-12-20 JP JP52388897A patent/JP3941966B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5838529A (en) | 1998-11-17 |
| WO1997023945A1 (en) | 1997-07-03 |
| EP0880818B1 (en) | 2003-02-26 |
| JP2000502509A (ja) | 2000-02-29 |
| EP0880818A1 (en) | 1998-12-02 |
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