JP3923097B2 - 洗浄装置 - Google Patents

洗浄装置 Download PDF

Info

Publication number
JP3923097B2
JP3923097B2 JP10884095A JP10884095A JP3923097B2 JP 3923097 B2 JP3923097 B2 JP 3923097B2 JP 10884095 A JP10884095 A JP 10884095A JP 10884095 A JP10884095 A JP 10884095A JP 3923097 B2 JP3923097 B2 JP 3923097B2
Authority
JP
Japan
Prior art keywords
cleaning
container
surfactant
metal
vibration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP10884095A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08306655A (ja
Inventor
忠弘 大見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP10884095A priority Critical patent/JP3923097B2/ja
Priority to TW085102423A priority patent/TW303481B/zh
Priority to US08/894,996 priority patent/US5944907A/en
Priority to KR1019970705927A priority patent/KR100422923B1/ko
Priority to PCT/JP1996/000526 priority patent/WO1996027898A1/ja
Publication of JPH08306655A publication Critical patent/JPH08306655A/ja
Application granted granted Critical
Publication of JP3923097B2 publication Critical patent/JP3923097B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
JP10884095A 1995-03-06 1995-05-02 洗浄装置 Expired - Fee Related JP3923097B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP10884095A JP3923097B2 (ja) 1995-03-06 1995-05-02 洗浄装置
TW085102423A TW303481B (https=) 1995-03-06 1996-02-29
US08/894,996 US5944907A (en) 1995-03-06 1996-03-05 Cleaning device and method
KR1019970705927A KR100422923B1 (ko) 1995-03-06 1996-03-05 세정장치및세정방법
PCT/JP1996/000526 WO1996027898A1 (en) 1995-03-06 1996-03-05 Cleaning device and method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7-45982 1995-03-06
JP4598295 1995-03-06
JP10884095A JP3923097B2 (ja) 1995-03-06 1995-05-02 洗浄装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005027524A Division JP4142655B2 (ja) 1995-03-06 2005-02-03 洗浄方法

Publications (2)

Publication Number Publication Date
JPH08306655A JPH08306655A (ja) 1996-11-22
JP3923097B2 true JP3923097B2 (ja) 2007-05-30

Family

ID=26386084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10884095A Expired - Fee Related JP3923097B2 (ja) 1995-03-06 1995-05-02 洗浄装置

Country Status (5)

Country Link
US (1) US5944907A (https=)
JP (1) JP3923097B2 (https=)
KR (1) KR100422923B1 (https=)
TW (1) TW303481B (https=)
WO (1) WO1996027898A1 (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4157185B2 (ja) * 1997-02-26 2008-09-24 財団法人国際科学振興財団 洗浄液及び洗浄方法
US20020157686A1 (en) * 1997-05-09 2002-10-31 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US7163588B2 (en) * 1997-05-09 2007-01-16 Semitool, Inc. Processing a workpiece using water, a base, and ozone
US20050034745A1 (en) * 1997-05-09 2005-02-17 Semitool, Inc. Processing a workpiece with ozone and a halogenated additive
US6869487B1 (en) * 1997-05-09 2005-03-22 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US7416611B2 (en) * 1997-05-09 2008-08-26 Semitool, Inc. Process and apparatus for treating a workpiece with gases
US7264680B2 (en) * 1997-05-09 2007-09-04 Semitool, Inc. Process and apparatus for treating a workpiece using ozone
US6240933B1 (en) * 1997-05-09 2001-06-05 Semitool, Inc. Methods for cleaning semiconductor surfaces
US6701941B1 (en) 1997-05-09 2004-03-09 Semitool, Inc. Method for treating the surface of a workpiece
US7404863B2 (en) * 1997-05-09 2008-07-29 Semitool, Inc. Methods of thinning a silicon wafer using HF and ozone
US7378355B2 (en) * 1997-05-09 2008-05-27 Semitool, Inc. System and methods for polishing a wafer
US20050215063A1 (en) * 1997-05-09 2005-09-29 Bergman Eric J System and methods for etching a silicon wafer using HF and ozone
US6348157B1 (en) 1997-06-13 2002-02-19 Tadahiro Ohmi Cleaning method
JP4001662B2 (ja) * 1997-06-27 2007-10-31 株式会社半導体エネルギー研究所 シリコンの洗浄方法および多結晶シリコンの作製方法
JP4135780B2 (ja) * 1997-08-29 2008-08-20 ユーシーティー株式会社 薬液定量注入装置および方法
TW426874B (en) * 1998-10-14 2001-03-21 United Microelectronics Corp Method for cleaning a semiconductor wafer
WO2001007177A1 (en) * 1999-07-23 2001-02-01 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
RU2209853C2 (ru) * 1999-11-23 2003-08-10 Федеральное государственное унитарное предприятие Конструкторское бюро транспортного машиностроения Способ очистки металлических поверхностей оборудования и устройство для его осуществления
US6371134B2 (en) 2000-01-31 2002-04-16 Advanced Micro Devices, Inc. Ozone cleaning of wafers
US6190062B1 (en) 2000-04-26 2001-02-20 Advanced Micro Devices, Inc. Cleaning chamber built into SEM for plasma or gaseous phase cleaning
DE10036691A1 (de) * 2000-07-27 2002-02-14 Wacker Siltronic Halbleitermat Verfahren zur chemischen Behandlung von Halbleiterscheiben
US6861007B2 (en) * 2001-03-02 2005-03-01 Micron Technology, Inc. Method for removing organic material from a substrate and for oxidizing oxidizable material thereon
DE10239773B3 (de) * 2002-08-29 2004-02-26 Wacker Siltronic Ag Halbleiterscheibe und Verfahren zur Reinigung einer Halbleiterscheibe
US6890452B2 (en) * 2002-11-08 2005-05-10 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions
US7169323B2 (en) * 2002-11-08 2007-01-30 3M Innovative Properties Company Fluorinated surfactants for buffered acid etch solutions
CN1321755C (zh) * 2003-01-21 2007-06-20 友达光电股份有限公司 清洗硅表面的方法以及用此方法制造薄膜晶体管的方法
US20070068558A1 (en) * 2005-09-06 2007-03-29 Applied Materials, Inc. Apparatus and methods for mask cleaning
US8030182B2 (en) * 2005-09-20 2011-10-04 Tadahiro Ohmi Semiconductor device manufacturing method and semiconductor manufacturing apparatus
US20100147777A1 (en) 2005-10-05 2010-06-17 Lion Corporation Ozone Oxidation Accelerator, Ozone Oxidation Accelerator Composition, and Ozone Treatment Method
US10935896B2 (en) * 2016-07-25 2021-03-02 Applied Materials, Inc. Cleaning solution mixing system with ultra-dilute cleaning solution and method of operation thereof
CN121219828A (zh) * 2023-04-21 2025-12-26 Asml荷兰有限公司 衬底处理

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02164707A (ja) * 1988-12-19 1990-06-25 Mitsui Toatsu Chem Inc 三弗化窒素ガスの精製方法
JP3217116B2 (ja) * 1992-03-06 2001-10-09 日産化学工業株式会社 低表面張力洗浄用組成物
JPH0641770A (ja) * 1992-07-27 1994-02-15 Daikin Ind Ltd シリコンウエハ表面の処理方法

Also Published As

Publication number Publication date
TW303481B (https=) 1997-04-21
US5944907A (en) 1999-08-31
KR19980702525A (ko) 1998-07-15
JPH08306655A (ja) 1996-11-22
WO1996027898A1 (en) 1996-09-12
KR100422923B1 (ko) 2004-07-01

Similar Documents

Publication Publication Date Title
JP3923097B2 (ja) 洗浄装置
US6348157B1 (en) Cleaning method
KR100220926B1 (ko) 소수성 실리콘 웨이퍼의 세정방법
US5679171A (en) Method of cleaning substrate
US5626681A (en) Method of cleaning semiconductor wafers
JPH04234118A (ja) 異物粒子の除去方法
KR100629095B1 (ko) 전자 재료의 세정 방법
JPH10251695A (ja) 半導体デバイス製造用ウェーハを洗浄する洗浄組成物及び洗浄方法
US6375752B1 (en) Method of wet-cleaning sintered silicon carbide
WO1999062110A1 (en) Post-etching alkaline treatment process
TWI543245B (zh) 半導體裝置之製造方法及半導體基板之清洗方法
JP2000169233A (ja) 炭化ケイ素焼結体の湿式洗浄方法
WO2011086876A1 (ja) シリコンウェーハの表面浄化方法
JP4142655B2 (ja) 洗浄方法
US20040266191A1 (en) Process for the wet-chemical surface treatment of a semiconductor wafer
JPH10183185A (ja) 洗浄液、その配合決定方法ならびに製造方法、洗浄方法、および、半導体基板の製造方法
JPH0831837A (ja) Ｅｇ用ポリシリコン膜の被着方法
JP4208056B2 (ja) 洗浄方法
JPH0786220A (ja) 半導体ウエハの洗浄方法
JPH0831781A (ja) 洗浄薬液
KR0153393B1 (ko) 반도체 기판의 연마 방법
WO2023218828A1 (ja) 洗浄液、及びウェーハの洗浄方法
JP3575854B2 (ja) シリコン単結晶ウエーハの洗浄方法および洗浄装置
JP5208658B2 (ja) 半導体ウェハの洗浄方法、および、半導体ウェハ
JP2003500537A (ja) 銅含有表面を有する電子部品を湿式処理する方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040421

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040616

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040816

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20041201

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070221

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100302

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100302

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees