JP3916462B2 - 集積回路の位相シフトおよびトリム・マスクを決定する方法および装置 - Google Patents

集積回路の位相シフトおよびトリム・マスクを決定する方法および装置 Download PDF

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Publication number
JP3916462B2
JP3916462B2 JP2001526664A JP2001526664A JP3916462B2 JP 3916462 B2 JP3916462 B2 JP 3916462B2 JP 2001526664 A JP2001526664 A JP 2001526664A JP 2001526664 A JP2001526664 A JP 2001526664A JP 3916462 B2 JP3916462 B2 JP 3916462B2
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phase shift
mask
integrated circuit
edges
trim mask
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Japanese (ja)
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JP2003510652A (ja
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コブ，ニコラス・ベイレイ
サカジリ，キョウヘイ
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メンター・グラフィクス・コーポレーション
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Networks Using Active Elements (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2001526664A 1999-09-28 2000-07-28 集積回路の位相シフトおよびトリム・マスクを決定する方法および装置 Expired - Fee Related JP3916462B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/407,447 1999-09-28
US09/407,447 US6335128B1 (en) 1999-09-28 1999-09-28 Method and apparatus for determining phase shifts and trim masks for an integrated circuit
PCT/US2000/020606 WO2001023961A1 (en) 1999-09-28 2000-07-28 Method and apparatus for determining phase shifts and trim masks for an integrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006071816A Division JP4218972B2 (ja) 1999-09-28 2006-03-15 集積回路の位相シフトおよびトリム・マスクを決定する方法および装置

Publications (2)

Publication Number Publication Date
JP2003510652A JP2003510652A (ja) 2003-03-18
JP3916462B2 true JP3916462B2 (ja) 2007-05-16

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ID=23612127

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JP2001526664A Expired - Fee Related JP3916462B2 (ja) 1999-09-28 2000-07-28 集積回路の位相シフトおよびトリム・マスクを決定する方法および装置
JP2006071816A Expired - Fee Related JP4218972B2 (ja) 1999-09-28 2006-03-15 集積回路の位相シフトおよびトリム・マスクを決定する方法および装置

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JP2006071816A Expired - Fee Related JP4218972B2 (ja) 1999-09-28 2006-03-15 集積回路の位相シフトおよびトリム・マスクを決定する方法および装置

Country Status (8)

Country Link
US (2) US6335128B1 (https=)
EP (1) EP1218798B1 (https=)
JP (2) JP3916462B2 (https=)
KR (1) KR100473197B1 (https=)
AT (1) ATE343157T1 (https=)
AU (1) AU6388700A (https=)
DE (1) DE60031429T2 (https=)
WO (1) WO2001023961A1 (https=)

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KR100498442B1 (ko) * 2001-05-23 2005-07-01 삼성전자주식회사 광 마스크 세트 및 그의 제조 방법
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Also Published As

Publication number Publication date
US6335128B1 (en) 2002-01-01
KR100473197B1 (ko) 2005-03-10
JP4218972B2 (ja) 2009-02-04
KR20020041814A (ko) 2002-06-03
EP1218798A1 (en) 2002-07-03
EP1218798B1 (en) 2006-10-18
US6455205B1 (en) 2002-09-24
ATE343157T1 (de) 2006-11-15
AU6388700A (en) 2001-04-30
JP2003510652A (ja) 2003-03-18
JP2006178498A (ja) 2006-07-06
WO2001023961A1 (en) 2001-04-05
DE60031429D1 (de) 2006-11-30
DE60031429T2 (de) 2007-08-30
US20020081500A1 (en) 2002-06-27

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