KR100473197B1 - 집적회로를 위한 위상 시프트 및 트림 마스크를 결정하는방법 및 장치 - Google Patents
집적회로를 위한 위상 시프트 및 트림 마스크를 결정하는방법 및 장치 Download PDFInfo
- Publication number
- KR100473197B1 KR100473197B1 KR10-2002-7004059A KR20027004059A KR100473197B1 KR 100473197 B1 KR100473197 B1 KR 100473197B1 KR 20027004059 A KR20027004059 A KR 20027004059A KR 100473197 B1 KR100473197 B1 KR 100473197B1
- Authority
- KR
- South Korea
- Prior art keywords
- mask
- phase
- region
- integrated circuit
- trim
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Networks Using Active Elements (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/407,447 | 1999-09-28 | ||
| US09/407,447 US6335128B1 (en) | 1999-09-28 | 1999-09-28 | Method and apparatus for determining phase shifts and trim masks for an integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20020041814A KR20020041814A (ko) | 2002-06-03 |
| KR100473197B1 true KR100473197B1 (ko) | 2005-03-10 |
Family
ID=23612127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2002-7004059A Expired - Fee Related KR100473197B1 (ko) | 1999-09-28 | 2000-07-28 | 집적회로를 위한 위상 시프트 및 트림 마스크를 결정하는방법 및 장치 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6335128B1 (https=) |
| EP (1) | EP1218798B1 (https=) |
| JP (2) | JP3916462B2 (https=) |
| KR (1) | KR100473197B1 (https=) |
| AT (1) | ATE343157T1 (https=) |
| AU (1) | AU6388700A (https=) |
| DE (1) | DE60031429T2 (https=) |
| WO (1) | WO2001023961A1 (https=) |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6228539B1 (en) * | 1996-09-18 | 2001-05-08 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
| JP2001235850A (ja) * | 2000-02-24 | 2001-08-31 | Sony Corp | フォトマスクパターンの設計方法、レジストパターンの形成方法および半導体装置の製造方法 |
| US6524752B1 (en) * | 2000-07-05 | 2003-02-25 | Numerical Technologies, Inc. | Phase shift masking for intersecting lines |
| US6503666B1 (en) * | 2000-07-05 | 2003-01-07 | Numerical Technologies, Inc. | Phase shift masking for complex patterns |
| US6681379B2 (en) | 2000-07-05 | 2004-01-20 | Numerical Technologies, Inc. | Phase shifting design and layout for static random access memory |
| US7083879B2 (en) | 2001-06-08 | 2006-08-01 | Synopsys, Inc. | Phase conflict resolution for photolithographic masks |
| US6978436B2 (en) | 2000-07-05 | 2005-12-20 | Synopsys, Inc. | Design data format and hierarchy management for phase processing |
| US6733929B2 (en) * | 2000-07-05 | 2004-05-11 | Numerical Technologies, Inc. | Phase shift masking for complex patterns with proximity adjustments |
| US6777141B2 (en) | 2000-07-05 | 2004-08-17 | Numerical Technologies, Inc. | Phase shift mask including sub-resolution assist features for isolated spaces |
| US6811935B2 (en) * | 2000-07-05 | 2004-11-02 | Numerical Technologies, Inc. | Phase shift mask layout process for patterns including intersecting line segments |
| US7028285B2 (en) * | 2000-07-05 | 2006-04-11 | Synopsys, Inc. | Standard cell design incorporating phase information |
| US6787271B2 (en) * | 2000-07-05 | 2004-09-07 | Numerical Technologies, Inc. | Design and layout of phase shifting photolithographic masks |
| US6541165B1 (en) * | 2000-07-05 | 2003-04-01 | Numerical Technologies, Inc. | Phase shift mask sub-resolution assist features |
| US6866971B2 (en) * | 2000-09-26 | 2005-03-15 | Synopsys, Inc. | Full phase shifting mask in damascene process |
| US6584610B1 (en) | 2000-10-25 | 2003-06-24 | Numerical Technologies, Inc. | Incrementally resolved phase-shift conflicts in layouts for phase-shifted features |
| US6901575B2 (en) | 2000-10-25 | 2005-05-31 | Numerical Technologies, Inc. | Resolving phase-shift conflicts in layouts using weighted links between phase shifters |
| US6622288B1 (en) | 2000-10-25 | 2003-09-16 | Numerical Technologies, Inc. | Conflict sensitive compaction for resolving phase-shift conflicts in layouts for phase-shifted features |
| US6635393B2 (en) | 2001-03-23 | 2003-10-21 | Numerical Technologies, Inc. | Blank for alternating PSM photomask with charge dissipation layer |
| US6553560B2 (en) * | 2001-04-03 | 2003-04-22 | Numerical Technologies, Inc. | Alleviating line end shortening in transistor endcaps by extending phase shifters |
| US6566019B2 (en) | 2001-04-03 | 2003-05-20 | Numerical Technologies, Inc. | Using double exposure effects during phase shifting to control line end shortening |
| US6573010B2 (en) | 2001-04-03 | 2003-06-03 | Numerical Technologies, Inc. | Method and apparatus for reducing incidental exposure by using a phase shifter with a variable regulator |
| US6569583B2 (en) | 2001-05-04 | 2003-05-27 | Numerical Technologies, Inc. | Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts |
| US6593038B2 (en) | 2001-05-04 | 2003-07-15 | Numerical Technologies, Inc. | Method and apparatus for reducing color conflicts during trim generation for phase shifters |
| KR100498442B1 (ko) * | 2001-05-23 | 2005-07-01 | 삼성전자주식회사 | 광 마스크 세트 및 그의 제조 방법 |
| US6852471B2 (en) * | 2001-06-08 | 2005-02-08 | Numerical Technologies, Inc. | Exposure control for phase shifting photolithographic masks |
| US6721938B2 (en) | 2001-06-08 | 2004-04-13 | Numerical Technologies, Inc. | Optical proximity correction for phase shifting photolithographic masks |
| US7178128B2 (en) * | 2001-07-13 | 2007-02-13 | Synopsys Inc. | Alternating phase shift mask design conflict resolution |
| US6523165B2 (en) | 2001-07-13 | 2003-02-18 | Numerical Technologies, Inc. | Alternating phase shift mask design conflict resolution |
| US6664009B2 (en) | 2001-07-27 | 2003-12-16 | Numerical Technologies, Inc. | Method and apparatus for allowing phase conflicts in phase shifting mask and chromeless phase edges |
| US6738958B2 (en) | 2001-09-10 | 2004-05-18 | Numerical Technologies, Inc. | Modifying a hierarchical representation of a circuit to process composite gates |
| US6698007B2 (en) | 2001-10-09 | 2004-02-24 | Numerical Technologies, Inc. | Method and apparatus for resolving coloring conflicts between phase shifters |
| US6981240B2 (en) | 2001-11-15 | 2005-12-27 | Synopsys, Inc. | Cutting patterns for full phase shifting masks |
| US6749970B2 (en) * | 2001-12-11 | 2004-06-15 | Advanced Micro Devices, Inc. | Method of enhancing clear field phase shift masks with border regions around phase 0 and phase 180 regions |
| US7122281B2 (en) * | 2002-02-26 | 2006-10-17 | Synopsys, Inc. | Critical dimension control using full phase and trim masks |
| US6605481B1 (en) | 2002-03-08 | 2003-08-12 | Numerical Technologies, Inc. | Facilitating an adjustable level of phase shifting during an optical lithography process for manufacturing an integrated circuit |
| JP3813562B2 (ja) * | 2002-03-15 | 2006-08-23 | 富士通株式会社 | 半導体装置及びその製造方法 |
| US6704921B2 (en) | 2002-04-03 | 2004-03-09 | Numerical Technologies, Inc. | Automated flow in PSM phase assignment |
| US6785879B2 (en) * | 2002-06-11 | 2004-08-31 | Numerical Technologies, Inc. | Model-based data conversion |
| US6821689B2 (en) | 2002-09-16 | 2004-11-23 | Numerical Technologies | Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature |
| KR100462887B1 (ko) * | 2002-10-22 | 2004-12-17 | 삼성전자주식회사 | 필드 게이트 이미지의 폭을 보강하는 위상 에지 위상 변이마스크 및 제조방법 |
| US7135255B2 (en) * | 2003-03-31 | 2006-11-14 | International Business Machines Corporation | Layout impact reduction with angled phase shapes |
| US6993741B2 (en) * | 2003-07-15 | 2006-01-31 | International Business Machines Corporation | Generating mask patterns for alternating phase-shift mask lithography |
| US7279209B2 (en) * | 2003-12-05 | 2007-10-09 | Ricoh Electronics, Inc. | Runnable splice |
| KR20050079730A (ko) * | 2004-02-06 | 2005-08-11 | 삼성전자주식회사 | 이종 프로토콜 노드들을 연결하는 방법 및 장치 |
| US7015148B1 (en) | 2004-05-25 | 2006-03-21 | Advanced Micro Devices, Inc. | Reduce line end pull back by exposing and etching space after mask one trim and etch |
| US7071085B1 (en) | 2004-05-25 | 2006-07-04 | Advanced Micro Devices, Inc. | Predefined critical spaces in IC patterning to reduce line end pull back |
| US7617473B2 (en) | 2005-01-21 | 2009-11-10 | International Business Machines Corporation | Differential alternating phase shift mask optimization |
| JP4909729B2 (ja) * | 2006-12-13 | 2012-04-04 | 株式会社東芝 | 検査データ作成方法および検査方法 |
| JP5833437B2 (ja) * | 2011-12-29 | 2015-12-16 | ルネサスエレクトロニクス株式会社 | シミュレーション装置およびシミュレーションプログラム |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2590376A1 (fr) | 1985-11-21 | 1987-05-22 | Dumant Jean Marc | Procede de masquage et masque utilise |
| JP2710967B2 (ja) | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | 集積回路装置の製造方法 |
| US5328807A (en) | 1990-06-11 | 1994-07-12 | Hitichi, Ltd. | Method of forming a pattern |
| US5364716A (en) | 1991-09-27 | 1994-11-15 | Fujitsu Limited | Pattern exposing method using phase shift and mask used therefor |
| US5308741A (en) | 1992-07-31 | 1994-05-03 | Motorola, Inc. | Lithographic method using double exposure techniques, mask position shifting and light phase shifting |
| US5302477A (en) | 1992-08-21 | 1994-04-12 | Intel Corporation | Inverted phase-shifted reticle |
| US5563012A (en) | 1994-06-30 | 1996-10-08 | International Business Machines Corporation | Multi mask method for selective mask feature enhancement |
| US5573890A (en) | 1994-07-18 | 1996-11-12 | Advanced Micro Devices, Inc. | Method of optical lithography using phase shift masking |
| US5538833A (en) * | 1994-08-03 | 1996-07-23 | International Business Machines Corporation | High resolution phase edge lithography without the need for a trim mask |
| US5537648A (en) | 1994-08-15 | 1996-07-16 | International Business Machines Corporation | Geometric autogeneration of "hard" phase-shift designs for VLSI |
| US5595843A (en) | 1995-03-30 | 1997-01-21 | Intel Corporation | Layout methodology, mask set, and patterning method for phase-shifting lithography |
| US5663017A (en) | 1995-06-07 | 1997-09-02 | Lsi Logic Corporation | Optical corrective techniques with reticle formation and reticle stitching to provide design flexibility |
| US6228539B1 (en) * | 1996-09-18 | 2001-05-08 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
| US5858580A (en) | 1997-09-17 | 1999-01-12 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
| US5807649A (en) | 1996-10-31 | 1998-09-15 | International Business Machines Corporation | Lithographic patterning method and mask set therefor with light field trim mask |
| US5795685A (en) | 1997-01-14 | 1998-08-18 | International Business Machines Corporation | Simple repair method for phase shifting masks |
| US5883813A (en) | 1997-03-04 | 1999-03-16 | International Business Machines Corporation | Automatic generation of phase shift masks using net coloring |
| US6057063A (en) * | 1997-04-14 | 2000-05-02 | International Business Machines Corporation | Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith |
| JP3307313B2 (ja) | 1998-01-23 | 2002-07-24 | ソニー株式会社 | パターン生成方法及びその装置 |
| US6120952A (en) | 1998-10-01 | 2000-09-19 | Micron Technology, Inc. | Methods of reducing proximity effects in lithographic processes |
-
1999
- 1999-09-28 US US09/407,447 patent/US6335128B1/en not_active Expired - Lifetime
-
2000
- 2000-07-28 WO PCT/US2000/020606 patent/WO2001023961A1/en not_active Ceased
- 2000-07-28 AT AT00950849T patent/ATE343157T1/de not_active IP Right Cessation
- 2000-07-28 KR KR10-2002-7004059A patent/KR100473197B1/ko not_active Expired - Fee Related
- 2000-07-28 JP JP2001526664A patent/JP3916462B2/ja not_active Expired - Fee Related
- 2000-07-28 EP EP00950849A patent/EP1218798B1/en not_active Revoked
- 2000-07-28 AU AU63887/00A patent/AU6388700A/en not_active Abandoned
- 2000-07-28 DE DE60031429T patent/DE60031429T2/de not_active Expired - Lifetime
-
2001
- 2001-12-13 US US10/017,357 patent/US6455205B1/en not_active Expired - Lifetime
-
2006
- 2006-03-15 JP JP2006071816A patent/JP4218972B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6335128B1 (en) | 2002-01-01 |
| JP4218972B2 (ja) | 2009-02-04 |
| JP3916462B2 (ja) | 2007-05-16 |
| KR20020041814A (ko) | 2002-06-03 |
| EP1218798A1 (en) | 2002-07-03 |
| EP1218798B1 (en) | 2006-10-18 |
| US6455205B1 (en) | 2002-09-24 |
| ATE343157T1 (de) | 2006-11-15 |
| AU6388700A (en) | 2001-04-30 |
| JP2003510652A (ja) | 2003-03-18 |
| JP2006178498A (ja) | 2006-07-06 |
| WO2001023961A1 (en) | 2001-04-05 |
| DE60031429D1 (de) | 2006-11-30 |
| DE60031429T2 (de) | 2007-08-30 |
| US20020081500A1 (en) | 2002-06-27 |
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