JP3906522B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3906522B2
JP3906522B2 JP15174997A JP15174997A JP3906522B2 JP 3906522 B2 JP3906522 B2 JP 3906522B2 JP 15174997 A JP15174997 A JP 15174997A JP 15174997 A JP15174997 A JP 15174997A JP 3906522 B2 JP3906522 B2 JP 3906522B2
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Japan
Prior art keywords
film
wiring
wire
pad portion
opening
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Expired - Fee Related
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JP15174997A
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English (en)
Japanese (ja)
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JPH10340920A (ja
JPH10340920A5 (OSRAM
Inventor
和弘 星野
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Sony Corp
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Sony Corp
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Priority to JP15174997A priority Critical patent/JP3906522B2/ja
Publication of JPH10340920A publication Critical patent/JPH10340920A/ja
Publication of JPH10340920A5 publication Critical patent/JPH10340920A5/ja
Application granted granted Critical
Publication of JP3906522B2 publication Critical patent/JP3906522B2/ja
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/03Manufacturing methods
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05075Plural internal layers
    • H01L2224/0508Plural internal layers being stacked
    • H01L2224/05082Two-layer arrangements
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    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
JP15174997A 1997-06-10 1997-06-10 半導体装置の製造方法 Expired - Fee Related JP3906522B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15174997A JP3906522B2 (ja) 1997-06-10 1997-06-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15174997A JP3906522B2 (ja) 1997-06-10 1997-06-10 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPH10340920A JPH10340920A (ja) 1998-12-22
JPH10340920A5 JPH10340920A5 (OSRAM) 2005-03-17
JP3906522B2 true JP3906522B2 (ja) 2007-04-18

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JP15174997A Expired - Fee Related JP3906522B2 (ja) 1997-06-10 1997-06-10 半導体装置の製造方法

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW426980B (en) * 1999-01-23 2001-03-21 Lucent Technologies Inc Wire bonding to copper
JP2003031575A (ja) 2001-07-17 2003-01-31 Nec Corp 半導体装置及びその製造方法
JP2003303848A (ja) * 2002-04-12 2003-10-24 Nec Compound Semiconductor Devices Ltd 半導体装置
KR20040045109A (ko) * 2002-11-22 2004-06-01 주식회사 하이닉스반도체 반도체 소자의 제조 방법
JP2004221098A (ja) 2003-01-09 2004-08-05 Renesas Technology Corp 半導体装置およびその製造方法
JP2008091454A (ja) * 2006-09-29 2008-04-17 Rohm Co Ltd 半導体装置及び半導体装置の製造方法
US7485564B2 (en) * 2007-02-12 2009-02-03 International Business Machines Corporation Undercut-free BLM process for Pb-free and Pb-reduced C4
JP4701264B2 (ja) * 2008-04-18 2011-06-15 ルネサスエレクトロニクス株式会社 半導体装置、および半導体装置の製造方法
JP5582879B2 (ja) * 2010-06-09 2014-09-03 株式会社東芝 半導体装置及びその製造方法
JP5621712B2 (ja) * 2011-06-06 2014-11-12 株式会社デンソー 半導体チップ
JP2014222742A (ja) * 2013-05-14 2014-11-27 トヨタ自動車株式会社 半導体装置
DE102016101801B4 (de) * 2016-02-02 2021-01-14 Infineon Technologies Ag Lastanschluss eines leistungshalbleiterbauelements, leistungshalbleitermodul damit und herstellungsverfahren dafür
JP7379845B2 (ja) * 2019-03-28 2023-11-15 セイコーエプソン株式会社 半導体装置、半導体装置の製造方法、電子デバイス、電子機器および移動体

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