JP3892609B2 - ホットプレートおよび半導体装置の製造方法 - Google Patents

ホットプレートおよび半導体装置の製造方法 Download PDF

Info

Publication number
JP3892609B2
JP3892609B2 JP03772999A JP3772999A JP3892609B2 JP 3892609 B2 JP3892609 B2 JP 3892609B2 JP 03772999 A JP03772999 A JP 03772999A JP 3772999 A JP3772999 A JP 3772999A JP 3892609 B2 JP3892609 B2 JP 3892609B2
Authority
JP
Japan
Prior art keywords
hot plate
temperature
semiconductor substrate
temperature measuring
electrostatic chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP03772999A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000236015A (ja
JP2000236015A5 (enExample
Inventor
富夫 堅田
伸夫 早坂
勝弥 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP03772999A priority Critical patent/JP3892609B2/ja
Priority to US09/503,723 priority patent/US6566632B1/en
Publication of JP2000236015A publication Critical patent/JP2000236015A/ja
Publication of JP2000236015A5 publication Critical patent/JP2000236015A5/ja
Application granted granted Critical
Publication of JP3892609B2 publication Critical patent/JP3892609B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP03772999A 1999-02-16 1999-02-16 ホットプレートおよび半導体装置の製造方法 Expired - Fee Related JP3892609B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP03772999A JP3892609B2 (ja) 1999-02-16 1999-02-16 ホットプレートおよび半導体装置の製造方法
US09/503,723 US6566632B1 (en) 1999-02-16 2000-02-15 Hot plate and semiconductor device manufacturing method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03772999A JP3892609B2 (ja) 1999-02-16 1999-02-16 ホットプレートおよび半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2000236015A JP2000236015A (ja) 2000-08-29
JP2000236015A5 JP2000236015A5 (enExample) 2004-09-09
JP3892609B2 true JP3892609B2 (ja) 2007-03-14

Family

ID=12505592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03772999A Expired - Fee Related JP3892609B2 (ja) 1999-02-16 1999-02-16 ホットプレートおよび半導体装置の製造方法

Country Status (2)

Country Link
US (1) US6566632B1 (enExample)
JP (1) JP3892609B2 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004061941A1 (ja) * 2002-12-26 2004-07-22 Mitsubishi Heavy Industries, Ltd. 静電チャック
US6921724B2 (en) * 2002-04-02 2005-07-26 Lam Research Corporation Variable temperature processes for tunable electrostatic chuck
US20040222210A1 (en) * 2003-05-08 2004-11-11 Hongy Lin Multi-zone ceramic heating system and method of manufacture thereof
JP4444090B2 (ja) * 2004-12-13 2010-03-31 東京エレクトロン株式会社 熱処理板の温度設定方法，熱処理板の温度設定装置，プログラム及びプログラムを記録したコンピュータ読み取り可能な記録媒体
TWI359473B (en) * 2006-07-19 2012-03-01 Ngk Insulators Ltd Electrostatic chuck heater
US7501605B2 (en) * 2006-08-29 2009-03-10 Lam Research Corporation Method of tuning thermal conductivity of electrostatic chuck support assembly
US7297894B1 (en) 2006-09-25 2007-11-20 Tokyo Electron Limited Method for multi-step temperature control of a substrate
US7723648B2 (en) * 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
US7838800B2 (en) * 2006-09-25 2010-11-23 Tokyo Electron Limited Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system
US7557328B2 (en) 2006-09-25 2009-07-07 Tokyo Electron Limited High rate method for stable temperature control of a substrate
JP4836900B2 (ja) * 2007-09-03 2011-12-14 ラピスセミコンダクタ株式会社 基板保持機構及びこの基板保持機構を用いる半導体装置の製造方法
CN102308380B (zh) * 2009-02-04 2014-06-04 马特森技术有限公司 用于径向调整衬底的表面上的温度轮廓的静电夹具系统及方法
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
KR101644673B1 (ko) * 2009-12-15 2016-08-01 램 리써치 코포레이션 Ｃｄ 균일성을 향상시키기 위한 기판 온도의 조절
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
US10237915B2 (en) * 2011-08-09 2019-03-19 Toyoko Kagaku Co., Ltd. Heat treatment apparatus
US9307578B2 (en) 2011-08-17 2016-04-05 Lam Research Corporation System and method for monitoring temperatures of and controlling multiplexed heater array
US10388493B2 (en) 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US8624168B2 (en) 2011-09-20 2014-01-07 Lam Research Corporation Heating plate with diode planar heater zones for semiconductor processing
US8461674B2 (en) 2011-09-21 2013-06-11 Lam Research Corporation Thermal plate with planar thermal zones for semiconductor processing
US9324589B2 (en) 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
US8809747B2 (en) 2012-04-13 2014-08-19 Lam Research Corporation Current peak spreading schemes for multiplexed heated array
US10049948B2 (en) 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
JP6106519B2 (ja) * 2013-05-09 2017-04-05 東京エレクトロン株式会社 基板処理方法、プログラム、制御装置、成膜装置及び基板処理システム
JP6075555B2 (ja) * 2013-07-05 2017-02-08 日新イオン機器株式会社 静電チャックシステムおよび半導体製造装置
JP6452449B2 (ja) * 2015-01-06 2019-01-16 東京エレクトロン株式会社 載置台及び基板処理装置
JP7278139B2 (ja) 2019-04-19 2023-05-19 東京エレクトロン株式会社 基板載置台
JP7477371B2 (ja) * 2020-06-02 2024-05-01 日本特殊陶業株式会社 保持装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4556785A (en) * 1983-05-23 1985-12-03 Gca Corporation Apparatus for vapor sheathed baking of semiconductor wafers
US6234599B1 (en) * 1988-07-26 2001-05-22 Canon Kabushiki Kaisha Substrate having a built-in temperature detecting element, and ink jet apparatus having the same
JPH06103670B2 (ja) * 1989-04-04 1994-12-14 三菱電機株式会社 半導体ウェハ加熱装置
US5059770A (en) * 1989-09-19 1991-10-22 Watkins-Johnson Company Multi-zone planar heater assembly and method of operation
US5210485A (en) * 1991-07-26 1993-05-11 International Business Machines Corporation Probe for wafer burn-in test system
US5580607A (en) * 1991-07-26 1996-12-03 Tokyo Electron Limited Coating apparatus and method
JP2685405B2 (ja) * 1993-02-12 1997-12-03 株式会社東芝 半導体樹脂封止装置
JP2813148B2 (ja) * 1994-03-02 1998-10-22 日本碍子株式会社 セラミックス製品
JPH08111370A (ja) * 1994-10-12 1996-04-30 Mitsubishi Electric Corp 微細レジストパターンの形成方法およびポストエキスポージャーベーク装置
KR100274127B1 (ko) * 1996-04-23 2001-01-15 이시다 아키라 기판 온도 제어방법, 기판 열처리장치 및 기판 지지장치
US6046439A (en) * 1996-06-17 2000-04-04 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US5885353A (en) * 1996-06-21 1999-03-23 Micron Technology, Inc. Thermal conditioning apparatus
US5835334A (en) 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
US5702624A (en) * 1996-10-09 1997-12-30 Taiwan Semiconductors Manfuacturing Company, Ltd Compete hot plate temperature control system for hot treatment
US5834739A (en) * 1996-11-05 1998-11-10 Barnstead/Thermolyne Corporation Stirring hot plate
TW464944B (en) * 1997-01-16 2001-11-21 Tokyo Electron Ltd Baking apparatus and baking method
JP3847920B2 (ja) 1997-10-06 2006-11-22 株式会社アルバック 静電吸着ホットプレート、真空処理装置、及び真空処理方法
US6063713A (en) * 1997-11-10 2000-05-16 Micron Technology, Inc. Methods for forming silicon nitride layers on silicon-comprising substrates
JPH11260534A (ja) * 1998-01-09 1999-09-24 Ngk Insulators Ltd 加熱装置およびその製造方法
US6048791A (en) * 1998-03-31 2000-04-11 Kabushiki Kaisha Toshiba Semiconductor device with electrode formed of conductive layer consisting of polysilicon layer and metal-silicide layer and its manufacturing method
US6140236A (en) * 1998-04-21 2000-10-31 Kabushiki Kaisha Toshiba High throughput A1-Cu thin film sputtering process on small contact via for manufacturable beol wiring
US6147334A (en) * 1998-06-30 2000-11-14 Marchi Associates, Inc. Laminated paddle heater and brazing process
US6100506A (en) * 1999-07-26 2000-08-08 International Business Machines Corporation Hot plate with in situ surface temperature adjustment

Also Published As

Publication number Publication date
US6566632B1 (en) 2003-05-20
JP2000236015A (ja) 2000-08-29

Similar Documents

Publication Publication Date Title
JP3892609B2 (ja) ホットプレートおよび半導体装置の製造方法
TWI702685B (zh) 極端均勻加熱基板支撐組件
JP5290250B2 (ja) 基板を化学的処理する処理システムおよび方法
JP4795935B2 (ja) 基板を処理する処理システムおよび方法
US8295026B2 (en) Electrostatic chuck and substrate processing apparatus having same
JP4745958B2 (ja) 基板を熱処理する処理システムおよび方法
US8252118B2 (en) Substrate support device and plasma processing apparatus
CN101523357B (zh) 等离子腔室中用于基板夹持的设备与方法
US6500686B2 (en) Hot plate and method of manufacturing semiconductor device
US8823404B2 (en) Evaluation device and evaluation method for substrate mounting apparatus and evaluation substrate used for the same
TWI591756B (zh) 用以監測多工加熱器陣列之溫度與控制該加熱器陣列的系統及方法
JP5324251B2 (ja) 基板保持装置
JP2007088411A (ja) 静電吸着装置およびウエハ処理装置ならびにプラズマ処理方法
JP2008085329A (ja) 基板処理システムに用いられる耐浸食性絶縁層を有する温度制御された基板ホルダ
KR19980702925A (ko) 다층의 정전식 척 및 그 제조 방법
TW201018320A (en) In-chamber member temperature control method, in-chamber member, substrate mounting table and plasma processing apparatus including same
KR20090071060A (ko) 정전척 및 그를 포함하는 기판처리장치
JP7185544B2 (ja) セラミックヒータ
JP2007531306A (ja) 分圧を使用して化学的酸化物除去プロセスを調整するための方法およびシステム
JP2010157559A (ja) プラズマ処置装置
JP5100372B2 (ja) 基材を処理するための加工システムおよび方法
US8092637B2 (en) Manufacturing method in plasma processing apparatus
JP3181364B2 (ja) プラズマ処理装置
JPH0945756A (ja) 半導体製造装置および製造方法
JP2001189276A (ja) ウエハ加熱装置

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060413

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060725

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060925

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20061205

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20061207

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091215

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101215

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111215

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121215

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121215

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131215

Year of fee payment: 7

LAPS Cancellation because of no payment of annual fees