JP6075555B2 - 静電チャックシステムおよび半導体製造装置 - Google Patents
静電チャックシステムおよび半導体製造装置 Download PDFInfo
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- JP6075555B2 JP6075555B2 JP2013141349A JP2013141349A JP6075555B2 JP 6075555 B2 JP6075555 B2 JP 6075555B2 JP 2013141349 A JP2013141349 A JP 2013141349A JP 2013141349 A JP2013141349 A JP 2013141349A JP 6075555 B2 JP6075555 B2 JP 6075555B2
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- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 126
- 238000001179 sorption measurement Methods 0.000 claims description 48
- 230000000737 periodic effect Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 description 16
- 238000012545 processing Methods 0.000 description 15
- 230000008859 change Effects 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 230000035882 stress Effects 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000012887 quadratic function Methods 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 230000009191 jumping Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- -1 or the like Substances 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
<その他変形例>
2 電極部
3 温度調整部
4 吸着面
5 基板
10 制御装置
E 静電チャック
Claims (7)
- 基板を静電的に吸着する吸着面を有するチャック本体と、
前記吸着面に吸着力を発生させる電極部と、
前記基板の温度を所定温度に調整する温度調整部と、
前記電極部への印加電圧を制御する制御装置と、を有する静電チャックシステムであって、
前記基板の前記チャック本体への静電吸着が完了する前に、前記制御装置は、第一の値から第一の値よりも絶対値が大きい第二の値に段階的、直線的あるいは二次関数的に変化する第一の静電吸着波形と矩形波、三角波、鋸波あるいは正弦波のいずれかからなる周期的な第二の静電吸着波形を重畳した電圧波形に基づいて前記電極部に静電吸着電圧を印加する静電チャックシステム。 - 前記第二の波形の振幅は時間的に一定である請求項1記載の静電チャックシステム。
- 前記第二の波形は矩形波で、前記制御装置は少なくとも前記基板の温度に応じて前記第二の波形のデューティ比、周期あるいは振幅の少なくとも一つが変更する請求項1記載の静電チャックシステム。
- 前記第二の波形は三角波、鋸波あるいは正弦波のいずれかで、前記制御装置は少なくとも前記基板の温度に応じて、前記第二の波形の周期あるいは振幅の少なくとも一つが変更する請求項1記載の静電チャックシステム。
- 前記第二の波形は三角波、鋸波あるいは正弦波のいずれかで、前記制御装置は時間的に前記第二の波形の振幅を増加させる請求項1記載の静電チャックシステム。
- 前記電圧波形による印加電圧の大きさは、静電吸着の開始時を除いては、絶対値で0V以上の値である請求項1乃至5のいずれか一項に記載の静電チャックシステム。
- 請求項1乃至6のいずれか一項に記載の静電チャックシステムと、
前記静電チャックシステムのチャック本体が配置される真空容器を備えた半導体製造装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013141349A JP6075555B2 (ja) | 2013-07-05 | 2013-07-05 | 静電チャックシステムおよび半導体製造装置 |
US14/221,038 US9190308B2 (en) | 2013-07-05 | 2014-03-20 | Electrostatic chuck system and semiconductor fabrication device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013141349A JP6075555B2 (ja) | 2013-07-05 | 2013-07-05 | 静電チャックシステムおよび半導体製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015015372A JP2015015372A (ja) | 2015-01-22 |
JP6075555B2 true JP6075555B2 (ja) | 2017-02-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013141349A Active JP6075555B2 (ja) | 2013-07-05 | 2013-07-05 | 静電チャックシステムおよび半導体製造装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9190308B2 (ja) |
JP (1) | JP6075555B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9530626B2 (en) * | 2014-07-25 | 2016-12-27 | Tokyo Electron Limited | Method and apparatus for ESC charge control for wafer clamping |
WO2016148855A1 (en) * | 2015-03-19 | 2016-09-22 | Applied Materials, Inc. | Method and apparatus for reducing radiation induced change in semiconductor structures |
JP6481979B2 (ja) * | 2015-03-31 | 2019-03-13 | パナソニックIpマネジメント株式会社 | プラズマ処理装置およびプラズマ処理方法 |
CN115494703A (zh) | 2016-04-20 | 2022-12-20 | Asml荷兰有限公司 | 衬底支撑件、光刻设备和装载方法 |
KR102644272B1 (ko) | 2016-10-31 | 2024-03-06 | 삼성전자주식회사 | 정전척 어셈블리 |
US10923379B2 (en) * | 2017-02-15 | 2021-02-16 | Lam Research Corporation | Methods for controlling clamping of insulator-type substrate on electrostatic-type substrate support structure |
JP6811144B2 (ja) * | 2017-05-30 | 2021-01-13 | 東京エレクトロン株式会社 | プラズマ処理装置の静電チャックを運用する方法 |
KR102520050B1 (ko) * | 2019-09-07 | 2023-04-07 | 캐논 톡키 가부시키가이샤 | 흡착 장치, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 |
WO2021130990A1 (ja) * | 2019-12-26 | 2021-07-01 | 三菱電機株式会社 | タッチパネル装置、タッチパネル入力システム、タッチパネル装置の制御方法、及びプログラム |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0422153A (ja) * | 1990-05-17 | 1992-01-27 | Tokyo Electron Ltd | 静電吸着装置 |
JPH08191098A (ja) * | 1995-01-09 | 1996-07-23 | Hitachi Ltd | 静電吸着装置 |
JPH10284583A (ja) * | 1997-04-04 | 1998-10-23 | Mitsubishi Electric Corp | 静電チャック除電方法及び半導体製造装置 |
JP2000021964A (ja) * | 1998-07-06 | 2000-01-21 | Ngk Insulators Ltd | 静電チャックのパーティクル発生低減方法および半導体製造装置 |
JP3892609B2 (ja) * | 1999-02-16 | 2007-03-14 | 株式会社東芝 | ホットプレートおよび半導体装置の製造方法 |
JP2000260855A (ja) * | 1999-03-10 | 2000-09-22 | Mitsubishi Electric Corp | ウェハ処理装置 |
JP2002009140A (ja) | 2000-06-22 | 2002-01-11 | Mitsubishi Electric Corp | 静電チャック装置 |
US7479456B2 (en) * | 2004-08-26 | 2009-01-20 | Applied Materials, Inc. | Gasless high voltage high contact force wafer contact-cooling electrostatic chuck |
JP2002270680A (ja) * | 2001-02-28 | 2002-09-20 | Applied Materials Inc | 基板支持方法及び基板支持装置 |
US6847014B1 (en) * | 2001-04-30 | 2005-01-25 | Lam Research Corporation | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support |
US6905984B2 (en) * | 2003-10-10 | 2005-06-14 | Axcelis Technologies, Inc. | MEMS based contact conductivity electrostatic chuck |
JP2008277609A (ja) * | 2007-05-01 | 2008-11-13 | Ulvac Japan Ltd | 被処理体の加熱冷却方法 |
US8194384B2 (en) * | 2008-07-23 | 2012-06-05 | Tokyo Electron Limited | High temperature electrostatic chuck and method of using |
US9117867B2 (en) * | 2011-07-01 | 2015-08-25 | Applied Materials, Inc. | Electrostatic chuck assembly |
JP5348673B2 (ja) | 2011-12-02 | 2013-11-20 | 株式会社アルバック | 被処理体の加熱冷却方法 |
-
2013
- 2013-07-05 JP JP2013141349A patent/JP6075555B2/ja active Active
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2014
- 2014-03-20 US US14/221,038 patent/US9190308B2/en active Active
Also Published As
Publication number | Publication date |
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JP2015015372A (ja) | 2015-01-22 |
US9190308B2 (en) | 2015-11-17 |
US20150009602A1 (en) | 2015-01-08 |
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