JP3891108B2 - 窒化物半導体発光素子 - Google Patents

窒化物半導体発光素子 Download PDF

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Publication number
JP3891108B2
JP3891108B2 JP2002354976A JP2002354976A JP3891108B2 JP 3891108 B2 JP3891108 B2 JP 3891108B2 JP 2002354976 A JP2002354976 A JP 2002354976A JP 2002354976 A JP2002354976 A JP 2002354976A JP 3891108 B2 JP3891108 B2 JP 3891108B2
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Japan
Prior art keywords
layer
nitride semiconductor
cladding layer
side cladding
thickness
Prior art date
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Expired - Fee Related
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JP2002354976A
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English (en)
Japanese (ja)
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JP2003163415A5 (enExample
JP2003163415A (ja
Inventor
孝夫 山田
俊雄 松下
修二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
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Nichia Corp
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Priority to JP2002354976A priority Critical patent/JP3891108B2/ja
Publication of JP2003163415A publication Critical patent/JP2003163415A/ja
Publication of JP2003163415A5 publication Critical patent/JP2003163415A5/ja
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JP2002354976A 2002-12-06 2002-12-06 窒化物半導体発光素子 Expired - Fee Related JP3891108B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002354976A JP3891108B2 (ja) 2002-12-06 2002-12-06 窒化物半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002354976A JP3891108B2 (ja) 2002-12-06 2002-12-06 窒化物半導体発光素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP35254097A Division JP3647236B2 (ja) 1997-12-22 1997-12-22 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2003163415A JP2003163415A (ja) 2003-06-06
JP2003163415A5 JP2003163415A5 (enExample) 2005-06-30
JP3891108B2 true JP3891108B2 (ja) 2007-03-14

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ID=19197914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002354976A Expired - Fee Related JP3891108B2 (ja) 2002-12-06 2002-12-06 窒化物半導体発光素子

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JP (1) JP3891108B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007305635A (ja) * 2006-05-09 2007-11-22 Sharp Corp 窒化物半導体発光素子
JP2011082245A (ja) * 2009-10-05 2011-04-21 Qd Laser Inc 光半導体装置及びそれを用いた光モジュール
DE102011100175B4 (de) * 2011-05-02 2021-12-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Stegwellenleiterstruktur und einer Modenfilterstruktur
DE102015119226A1 (de) * 2015-11-09 2017-05-11 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode

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JP2003163415A (ja) 2003-06-06

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