JP3888011B2 - 電気光学装置及び電子機器 - Google Patents
電気光学装置及び電子機器 Download PDFInfo
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- JP3888011B2 JP3888011B2 JP32558299A JP32558299A JP3888011B2 JP 3888011 B2 JP3888011 B2 JP 3888011B2 JP 32558299 A JP32558299 A JP 32558299A JP 32558299 A JP32558299 A JP 32558299A JP 3888011 B2 JP3888011 B2 JP 3888011B2
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- conductive layer
- electro
- pixel electrode
- thin film
- region
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- 239000010410 layer Substances 0.000 claims description 264
- 239000010408 film Substances 0.000 claims description 236
- 239000000758 substrate Substances 0.000 claims description 155
- 239000010409 thin film Substances 0.000 claims description 79
- 238000000034 method Methods 0.000 claims description 67
- 239000011229 interlayer Substances 0.000 claims description 53
- 239000003990 capacitor Substances 0.000 claims description 45
- 230000008569 process Effects 0.000 claims description 44
- 239000000382 optic material Substances 0.000 claims description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 91
- 230000005684 electric field Effects 0.000 description 79
- 230000004888 barrier function Effects 0.000 description 30
- 230000006870 function Effects 0.000 description 28
- 230000001965 increasing effect Effects 0.000 description 25
- 239000000463 material Substances 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 17
- 238000003860 storage Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000011295 pitch Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 230000002411 adverse Effects 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 8
- 239000003870 refractory metal Substances 0.000 description 8
- 239000011651 chromium Substances 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 239000005368 silicate glass Substances 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000010365 information processing Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32558299A JP3888011B2 (ja) | 1999-11-16 | 1999-11-16 | 電気光学装置及び電子機器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32558299A JP3888011B2 (ja) | 1999-11-16 | 1999-11-16 | 電気光学装置及び電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001142089A JP2001142089A (ja) | 2001-05-25 |
| JP2001142089A5 JP2001142089A5 (enExample) | 2004-12-24 |
| JP3888011B2 true JP3888011B2 (ja) | 2007-02-28 |
Family
ID=18178501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32558299A Expired - Fee Related JP3888011B2 (ja) | 1999-11-16 | 1999-11-16 | 電気光学装置及び電子機器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3888011B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7474002B2 (en) | 2001-10-30 | 2009-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having dielectric film having aperture portion |
| US7061564B2 (en) | 2003-07-04 | 2006-06-13 | Seiko Epson Corporation | Liquid crystal device, method for producing the liquid crystal device, and electronic apparatus |
| US7566001B2 (en) | 2003-08-29 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | IC card |
| JP2005338746A (ja) * | 2003-11-13 | 2005-12-08 | Seiko Epson Corp | 電気光学装置の製造方法及び電気光学装置、並びにこれを備えた電子機器 |
| KR102513333B1 (ko) * | 2018-01-31 | 2023-03-23 | 삼성디스플레이 주식회사 | 표시 장치 |
| CN112309268A (zh) * | 2019-07-31 | 2021-02-02 | 海信视像科技股份有限公司 | 一种显示装置及显示装置制备方法 |
| CN114596779B (zh) * | 2022-03-07 | 2024-01-30 | 武汉华星光电半导体显示技术有限公司 | 显示面板及显示终端 |
-
1999
- 1999-11-16 JP JP32558299A patent/JP3888011B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001142089A (ja) | 2001-05-25 |
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