JP3856290B2 - ネガ型レジスト組成物 - Google Patents

ネガ型レジスト組成物 Download PDF

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Publication number
JP3856290B2
JP3856290B2 JP2001315287A JP2001315287A JP3856290B2 JP 3856290 B2 JP3856290 B2 JP 3856290B2 JP 2001315287 A JP2001315287 A JP 2001315287A JP 2001315287 A JP2001315287 A JP 2001315287A JP 3856290 B2 JP3856290 B2 JP 3856290B2
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group
acid
substituted
fluorine atom
resist composition
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Expired - Fee Related
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JP2001315287A
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Japanese (ja)
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JP2003121999A (ja
JP2003121999A5 (th
Inventor
表 高橋
昭一郎 安波
一良 水谷
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富士フイルムホールディングス株式会社
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JP2001315287A 2001-10-12 2001-10-12 ネガ型レジスト組成物 Expired - Fee Related JP3856290B2 (ja)

Priority Applications (1)

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JP2001315287A JP3856290B2 (ja) 2001-10-12 2001-10-12 ネガ型レジスト組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001315287A JP3856290B2 (ja) 2001-10-12 2001-10-12 ネガ型レジスト組成物

Publications (3)

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JP2003121999A JP2003121999A (ja) 2003-04-23
JP2003121999A5 JP2003121999A5 (th) 2005-04-07
JP3856290B2 true JP3856290B2 (ja) 2006-12-13

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JP2001315287A Expired - Fee Related JP3856290B2 (ja) 2001-10-12 2001-10-12 ネガ型レジスト組成物

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4792299B2 (ja) * 2006-02-07 2011-10-12 富士フイルム株式会社 新規なスルホニウム化合物、該化合物を含有する感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4678383B2 (ja) * 2007-03-29 2011-04-27 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びパターン形成方法
JP5459026B2 (ja) * 2010-03-31 2014-04-02 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP6088827B2 (ja) * 2013-01-10 2017-03-01 富士フイルム株式会社 ネガ型レジスト組成物、それを用いたレジスト膜及びパターン形成方法、並びにレジスト膜を備えたマスクブランクス
JP5812030B2 (ja) * 2013-03-13 2015-11-11 信越化学工業株式会社 スルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法
JP6267982B2 (ja) 2014-02-05 2018-01-24 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、電子デバイスの製造方法、新規化合物、及び、新規化合物の製造方法
JP6313604B2 (ja) * 2014-02-05 2018-04-18 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法
JP6286227B2 (ja) * 2014-02-21 2018-02-28 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法
JP6209103B2 (ja) * 2014-02-25 2017-10-04 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク

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